75652G Search Results

75652G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334
Contextual Info: 75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models

75652G

Contextual Info: 75652G3 TM Data Sheet November 2000 File Number 4964 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models

75652G

Abstract: 75652 AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334 HUF75652G
Contextual Info: 75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

75652G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75652 HUF75652G3 TB334
Contextual Info: 75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

75652G

Abstract: HUFA75652G3 AN7254 AN9321 AN9322 TB334 75652
Contextual Info: 75652G3 Data Sheet November 2000 File Number 4964 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models

75652G

Contextual Info: 75652G3 in t e g r i I Data Sheet O cto be r 1999 4746.1 Ultra, 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging File N um ber Features JEDEC TO-247 • Ultra Low On-Resistance ' rDS ON = 0.008S2, VG S = 10V • Simulation Models - Temperature Compensated P SP IC E and S A B E R *

75652

Abstract: 75652G AN7254 AN9321 AN9322 HUFA75652G3 TB334
Contextual Info: 75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB 75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

Contextual Info: 75652G3 October 2013 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 75 A, 8 mΩ Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER