ZO 150
Abstract: dg1u IRF230 1RF232 IRF231 IRF232 IRF233 IRF23 ic l00a S101
Text: 01 J E 1 3fl7S0öl DG1Ü2Ö4 S | ~ 0 ^ 3 *9 -/I SOLID STATE 01E 18284 3875081 G E a ta n a a ra ro w e r M O S FE Ts IRF230, IRF231, IRF232, IRF233 File Number 1568 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T MODE N-Channel Enhancement-Mode
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IRF230,
IRF231,
IRF232,
IRF233
50V-200V
IRF232
IRF233
IF230
ZO 150
dg1u
IRF230
1RF232
IRF231
IRF23
ic l00a
S101
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IRF624
Abstract: No abstract text available
Text: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec
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T-39-11
T0-220AB
C-239
IRF624,
IRF625
C-240
IRF624
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