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    IRF624 Search Results

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    IRF624 Price and Stock

    Vishay Siliconix IRF624SPBF

    MOSFET N-CH 250V 4.4A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF624SPBF Tube 1,574 1
    • 1 $2.84
    • 10 $2.84
    • 100 $2.84
    • 1000 $0.94281
    • 10000 $0.94281
    		Buy Now

    Vishay Siliconix IRF624

    MOSFET N-CH 250V 4.4A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF624 Tube 1,000
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    • 100 -
    • 1000 $1.73487
    • 10000 $1.73487
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    Bristol Electronics IRF624 500
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    Quest Components IRF624 400
    • 1 $1.35
    • 10 $1.35
    • 100 $0.675
    • 1000 $0.54
    • 10000 $0.54
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    Vishay Siliconix IRF624S

    MOSFET N-CH 250V 4.4A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF624S Tube 1,000
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    • 1000 $2.025
    • 10000 $2.025
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    Bristol Electronics IRF624S 848
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    Quest Components IRF624S 678
    • 1 $3.888
    • 10 $3.888
    • 100 $3.888
    • 1000 $1.458
    • 10000 $1.458
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    Vishay Siliconix IRF624L

    MOSFET N-CH 250V 4.4A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF624L Tube
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    Vishay Siliconix IRF624PBF

    MOSFET N-CH 250V 4.4A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF624PBF Tube 1,000
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    • 100 -
    • 1000 $0.82363
    • 10000 $0.82363
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    Find more IRF624 price and stock on Findchips.com

    IRF624 Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF624 Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRF624 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF624 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 4.4A TO-220AB Original PDF
    IRF624 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF624 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF624 International Rectifier HEXFET Power Mosfet Scan PDF
    IRF624 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 250V, 4.4A, Pkg Style TO-220AB Scan PDF
    IRF624 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF624 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRF624 International Rectifier HEXFET Power MOSFET Scan PDF
    IRF624 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF624 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF624 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF624 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    IRF624 Unknown FET Data Book Scan PDF
    IRF624A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRF624A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRF624A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF624A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRF624B Fairchild Semiconductor 250 V N-Channel MOSFET Original PDF

    IRF624 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95626 IRF624PbF • Lead-Free Document Number: 91029 8/3/04 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029


    Original     		PDF IRF624PbF 08-Mar-07

    IRF624A

    Abstract: No abstract text available
    Text: IRF624A Advanced Power MOSFET FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology RDS on = 1.1 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 4.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V


    Original     		PDF IRF624A O-220 IRF624A

    IRF624B

    Abstract: IRFS624B IRF series
    Text: IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF624B/IRFS624B O-220 IRF624B IRFS624B IRF series

    diode 132 E

    Abstract: diode IR 132 E
    Text: PD - 95626 IRF624PbF • Lead-Free www.irf.com 1 8/3/04 IRF624PbF 2 www.irf.com IRF624PbF www.irf.com 3 IRF624PbF 4 www.irf.com IRF624PbF www.irf.com 5 IRF624PbF 6 www.irf.com IRF624PbF www.irf.com 7 IRF624PbF Peak Diode Recovery dv/dt Test + Circuit Layout Considerations


    Original     		PDF IRF624PbF O-220AB. O-220AB diode 132 E diode IR 132 E

    Untitled

    Abstract: No abstract text available
    Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF624S, SiHF624S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF624S, SiHF624S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF624

    Abstract: SiHF624 SiHF624-E3
    Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)


    Original     		PDF IRF624, SiHF624 O-220 O-220 18-Jul-08 IRF624 SiHF624-E3

    VISHAY diode MARKING ED

    Abstract: ED MARKING Vishay IRF530S
    Text: PD- 95985 IRF624SPbF • Lead-Free Document Number: 91030 12/21/04 www.vishay.com 1 IRF624SPbF Document Number: 91030 www.vishay.com 2 IRF624SPbF Document Number: 91030 www.vishay.com 3 IRF624SPbF Document Number: 91030 www.vishay.com 4 IRF624SPbF Document Number: 91030


    Original     		PDF IRF624SPbF 12-Mar-07 VISHAY diode MARKING ED ED MARKING Vishay IRF530S

    ED marking code diode

    Abstract: IRF530S
    Text: PD- 95985 IRF624SPbF • Lead-Free www.irf.com 1 12/21/04 IRF624SPbF 2 www.irf.com IRF624SPbF www.irf.com 3 IRF624SPbF 4 www.irf.com IRF624SPbF www.irf.com 5 IRF624SPbF 6 www.irf.com IRF624SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original     		PDF IRF624SPbF EIA-418. ED marking code diode IRF530S

    AN609

    Abstract: IRF624 SiHF624
    Text: IRF624_RC, SiHF624_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF624 SiHF624 AN609, 09-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)


    Original     		PDF IRF624, SiHF624 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)


    Original     		PDF IRF624, SiHF624 O-220 O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF624S, SiHF624S SMD-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)


    Original     		PDF IRF624, SiHF624 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF624

    Abstract: SiHF624 SiHF624-E3 irf624p
    Text: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)


    Original     		PDF IRF624, SiHF624 O-220 O-220 18-Jul-08 IRF624 SiHF624-E3 irf624p

    Untitled

    Abstract: No abstract text available
    Text: IRF624A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V


    OCR Scan     		PDF IRF624A

    th 2167.1

    Abstract: No abstract text available
    Text: • 4 3 D E 271 0 0 5 4 0 1 0 7 Tfl ■ HAS 23 H A R R I S IRF624, IRF625 IRF626, IRF627 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Features Package T O -2 2 0 A B • 3.8A and 3.3A, 250V - 275V • rD S °n = T O P VIEW a n d 1 -5 i ^ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF624, IRF625 IRF626, IRF627 -220A th 2167.1

    diode smd ed 49

    Abstract: smd diode code ED JJ SMD diode a8 smd diode ED DIODE SMD A8 smd code marking A8 diode smd diode code I5 A8 JJ SMD diode diode smd marking ed st smd diode marking code
    Text: PD-9.1004 International i“R Rectifier IRF624S HEXFET Power M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 250V


    OCR Scan     		PDF IRF624S SMD-220 D-63S0 G214b7 i09Zj diode smd ed 49 smd diode code ED JJ SMD diode a8 smd diode ED DIODE SMD A8 smd code marking A8 diode smd diode code I5 A8 JJ SMD diode diode smd marking ed st smd diode marking code

    Untitled

    Abstract: No abstract text available
    Text: Il International ü g Rectifier MflSSMSE ÜOm71G TMl • INR IRF624 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • PD-9.472B Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE ]>


    OCR Scan     		PDF Om71G IRF624

    Untitled

    Abstract: No abstract text available
    Text: IRF624A Advanced Power MOSFET FEATURES B ^D S S - 250 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 1 .1 Q 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (M ax.) @ V DS = 250V


    OCR Scan     		PDF IRF624A

    IRF624

    Abstract: No abstract text available
    Text: IRF624 Advanced Power MOSFET FEATURES B ^D S S - 250 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 1 .1 Q 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (M ax.) @ V DS = 250V


    OCR Scan     		PDF IRF624 IRF624

    IRF624

    Abstract: RG-185 9472
    Text: PD-9.472B International S Rectifier IRF624 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 1 - 1 ^ lD = 4.4A Description Third Generation HEXFETs from International Rectifier provide the designer


    OCR Scan     		PDF IRF624 O-220 IRF624 RG-185 9472

    IRF624A

    Abstract: No abstract text available
    Text: IRF624A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 .1 Q 4 .1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10nA(M ax.) @ V DS = 250V


    OCR Scan     		PDF IRF624A 742fi IRF624A

    1041A

    Abstract: 1RF624
    Text: IRF624A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 u A M ax. @ VOS = 250V ■ Low Ros(on) •' 0.742 S2 (Typ.)


    OCR Scan     		PDF IRF624A 1041A 1RF624