IRF624 Search Results

Contextual Info: PD - 95626 IRF624PbF • Lead-Free Document Number: 91029 8/3/04 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029

Contextual Info: IRF624A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|^A(Max.) @ V DS = 250V

IRF624A

Contextual Info: IRF624A Advanced Power MOSFET FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology RDS on = 1.1 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 4.1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V

IRF624B

Abstract: IRFS624B IRF series
Contextual Info: IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

th 2167.1

Contextual Info: • 4 3 D E 271 0 0 5 4 0 1 0 7 Tfl ■ HAS 23 H A R R I S IRF624, IRF625 IRF626, IRF627 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Features Package T O -2 2 0 A B • 3.8A and 3.3A, 250V - 275V • rD S °n = T O P VIEW a n d 1 -5 i ^ • Single Pulse Avalanche Energy Rated

diode 132 E

Abstract: diode IR 132 E
Contextual Info: PD - 95626 IRF624PbF • Lead-Free www.irf.com 1 8/3/04 IRF624PbF 2 www.irf.com IRF624PbF www.irf.com 3 IRF624PbF 4 www.irf.com IRF624PbF www.irf.com 5 IRF624PbF 6 www.irf.com IRF624PbF www.irf.com 7 IRF624PbF Peak Diode Recovery dv/dt Test + Circuit Layout Considerations

Contextual Info: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

diode smd ed 49

Abstract: smd diode code ED JJ SMD diode a8 smd diode ED DIODE SMD A8 smd code marking A8 diode smd diode code I5 A8 JJ SMD diode diode smd marking ed st smd diode marking code
Contextual Info: PD-9.1004 International i“R Rectifier IRF624S HEXFET Power M O SFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 250V

Contextual Info: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

Contextual Info: Il International ü g Rectifier MflSSMSE ÜOm71G TMl • INR IRF624 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • PD-9.472B Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE ]>

IRF624

Abstract: SiHF624 SiHF624-E3
Contextual Info: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)

Contextual Info: IRF624A Advanced Power MOSFET FEATURES B ^D S S - 250 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 1 .1 Q 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (M ax.) @ V DS = 250V

IRF624

Contextual Info: IRF624 Advanced Power MOSFET FEATURES B ^D S S - 250 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 1 .1 Q 4 .1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (M ax.) @ V DS = 250V

VISHAY diode MARKING ED

Abstract: ED MARKING Vishay IRF530S
Contextual Info: PD- 95985 IRF624SPbF • Lead-Free Document Number: 91030 12/21/04 www.vishay.com 1 IRF624SPbF Document Number: 91030 www.vishay.com 2 IRF624SPbF Document Number: 91030 www.vishay.com 3 IRF624SPbF Document Number: 91030 www.vishay.com 4 IRF624SPbF Document Number: 91030

AN609

Abstract: IRF624 SiHF624
Contextual Info: IRF624_RC, SiHF624_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRF624

Abstract: RG-185 9472
Contextual Info: PD-9.472B International S Rectifier IRF624 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 250V R DS on = 1 - 1 ^ lD = 4.4A Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)

IRF624A

Contextual Info: IRF624A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 .1 Q 4 .1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10nA(M ax.) @ V DS = 250V

1041A

Abstract: 1RF624
Contextual Info: IRF624A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 u A M ax. @ VOS = 250V ■ Low Ros(on) •' 0.742 S2 (Typ.)

Contextual Info: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)

Contextual Info: IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)

IRF624B

Contextual Info: IRF624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRF624

Abstract: SiHF624 SiHF624-E3 irf624p
Contextual Info: IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.1 RoHS* Qg (Max.) (nC) 14 • Fast Switching Qgs (nC) 2.7 • Ease of Paralleling Qgd (nC)