76113 SOT223 Search Results

Saber

Abstract: TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST
Contextual Info: HUF76113T3ST interrii June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features Logic Level Gate Drive # This N-Channel power MOSFET is manufactured using the innovative &WMW W UltraFET process. This advanced * process technology achieves the

Contextual Info: i n t e r n a HUF76113T3ST i Ju n e 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET F ile N u m b e r 4388.2 Features • Logic Level G ate Drive This N-Channel power M O S F E T is • 4.7A, 30V manufactured using the innovative • Ultra Low On-Resistance, r ^ o N = 0.031 £2

76113

Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Contextual Info: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

TA7611

Abstract: TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST
Contextual Info: HUF76113T3ST Data Sheet December 2001 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

n13 sot 23

Contextual Info: HUF76113T3ST Data Sheet June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

n13 sot 23

Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Contextual Info: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF76113T3ST Data Sheet January 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12