SABER Search Results

AN9321

Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Contextual Info: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER

IRF530N

Abstract: AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF530N TM Data Sheet March 2000 File Number 4843 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

MOSFET 640N

Abstract: IRF640NS irf640* spice irf640n circuit using irf640n
Contextual Info: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER

ISL 2651

Abstract: 630n
Contextual Info: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: IRFP140N Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title FP1 N bt A, 0V, 40 m, Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

Contextual Info: HUF75831SK8 Data Sheet August 2000 File Number 4796.2 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER

Contextual Info: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏

irf540n

Abstract: MOSFET IRF540n power 22E Datasheet IRF540n IRF540NT AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF540N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE IRF540N • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

75852G

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75852G3 TB334
Contextual Info: HUF75852G3 Data Sheet April 2000 File Number 4846 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

SIPMOS

Abstract: siemens igbt profet igbt types SIPMOS SPICE SPICE MODELS models spice simulation Semiconductor Group igbt mosfet
Contextual Info: Simulation Models for SIPMOS Components The SIEMENS Power Semiconductor Group provides SPICE models for many MOSFET and IGBT types. Please refer to the README.TXT-file in the /LHDATAdirectory on the CD-ROM. Additional models SPICE, SABER for MOSFET, PROFET, will be available by the

HUF75631SK8

Abstract: HUF75631SK8T MS-012AA TB334 AN7254 AN7260 AN9321 AN9322
Contextual Info: HUF75631SK8 Data Sheet October 1999 File Number 4785 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.039Ω, VGS = 10V BRANDING DASH 5 1 2 3 • Simulation Models - Temperature Compensated PSPICE and SABER

AN7254

Abstract: AN9321 AN9322 HUF75531SK8 HUF75531SK8T MS-012AA TB370
Contextual Info: HUF75531SK8 TM Data Sheet April 2000 File Number 4848 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: HUFA75531SK8 TM Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

Contextual Info: IRF530 TM Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance - rDS ON = 0.064Ω, VGS = 10V SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER

75852G

Abstract: AN7254 AN9321 AN9322 HUFA75852G3 TB334
Contextual Info: HUFA75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER

mosfet 23 Tsop-6

Abstract: IRLML2244TR power MOSFET reliability report TSOP-6 Marking IRLML2244 marking 43A sot23 MOSFET reliability report Cross Reference power MOSFET IRLMS6802TRPBF P-channel HEXFET Power MOSFET
Contextual Info: International Rectifier Product Detail Page Page 1 of 2 Part Se Part: IRLMS6802TRPBF Description: -20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 Micro 6 package Support Docs: Datasheet Spice File Saber File Reliability Report Cross Reference IR Part #

IRF630N

Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
Contextual Info: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

Spice Model for TMOS Power MOSFETs

Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
Contextual Info: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in

mosfet 4953

Abstract: 4953 mosfet m 4953 mw 4953 AN9321 HUFA75531SK8 HUFA75531SK8T MS-012AA TB370 151E9
Contextual Info: HUFA75531SK8 Data Sheet November 2000 File Number 4953 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE and SABER

C624000XFSD18XA

Abstract: ST2W008 RT8070SP PCIE_rext C625000XFSD18XA
Contextual Info: 5 4 3 2 1 SABER LITE REV-D USB PORT1 Power Rail D 5 VOLT IN 5VOLTS 4AMPS AC ADAPTER SWITCHING REGULATORS USB OTG Power Rail D USB PORT2 USB HOST RJ45 MOLEX CONNECTOR USB PORT3 SD4 UARTS RS-232 SERIAL FLASH JTAG USB TYPE A USB2514 RGMII KSZ9021RN C Micro USB

Contextual Info: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER

IRF540n

Abstract: MOSFET IRF540n mosfet 4842 Datasheet IRF540n AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF540N TM Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

AN7254

Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
Contextual Info: HUF76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models

AN7254

Abstract: AN7260 AN9321 AN9322 IRFP140N TB334
Contextual Info: IRFP140N TM Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER