764MHZ Search Results

RA45H7687M1

Abstract: RA45H8994M1 AN-900-027-B
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-027-B Date : 10th May. 2007 Rev. date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1

RA20H8087M

Abstract: RF MOSFET MODULE RA20H8087M-101 F8068
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

341V

Abstract: RA45H7687M1 22an VGG13
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-026-A Date : 21st Feb. 2007 Rev.date : 7thJan. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control

TB203

Abstract: LP801
Contextual Info: Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=0.5A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm 5 470 490 510 530 550 570 590 610 630 650 670 690 710 730 750 770 Freq in MHz Gain vs. Freq TB203 LP801 Vds=28Vdc Idq=1A 20 Gain in dB 15 Gain 10 Pout fixed at 17dBm

RA20H8087M

Abstract: RA20H8087M-01 RA20H8087M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz

DEA202450BT-1261A2

Abstract: DEA202450BT-2038A1 DEA202450BT-1213C1 DEA202450BT-1283A2 DEA202441BT-2106A2 DEA202450BT-1275A1 DEA202450BT-3201B2 3717d
Contextual Info: Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth DEA Series Type: DEA202450BT-1261A2 2.0x1.25×0.55mm DEA202441BT-2106A2 (2.0×1.25×0.7mm max.) DEA202450BT-3201B2 (2.0×1.25×0.8mm max.) DEA202450BT-1213C1 (2.0×1.25×0.95mm) DEA202450BT-1275A1 (2.0×1.25×0.95mm)

RA45H7687M1

Abstract: mitsubishi rf sirf 1v GG13
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-900-026 Date : 21st Feb. 2007 Prepared : K. Mori Confirmed : S. Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Recommendation of the output power control for RA45H7687M1

RA20H8087M

Abstract: RA20H8087M-01 20W power transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M 806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

3717d

Abstract: DEA202450BT-1283A2 DEA202450BT DEA202450BT-1261A2 092dB DEA202450BT-2038A1
Contextual Info: Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth DEA Series Type: DEA202450BT-1261A2 2.0x1.25×0.55mm DEA202441BT-2106A2 (2.0×1.25×0.7mm max.) DEA202450BT-3201B2 (2.0×1.25×0.8mm max.) DEA202450BT-1213C1 (2.0×1.25×0.95mm) DEA202450BT-1275A1 (2.0×1.25×0.95mm)

TB204

Abstract: LP802
Contextual Info: TB204 24V Performance TB204 LP802 Vds=24V Idq=0.5A Freq MHz Pin (mW) Pout (mW) 470 4.2 100 490 3.9 100 510 3.5 100 Flatness +/0.40 dB 530 550 570 Flatness +/- 3.4 3.4 3.5 0.06 dB 100 100 100 590 610 630 Flatness +/- 3.6 4 4 0.23 dB 100 100 100 650 670 690

RA20H8087M

Abstract: RA20H8087M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

1559MHz

Abstract: 0943D DEA252450BT-2080B 5104db 544db
Contextual Info: Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth DEA Series Type: DEA252450BT-2080B2 2.5x2.0×0.9mm DEA252450BT-2024C2 (2.5×2.0×0.9mm) DEA252450BT-2024C5 (2.5×2.0×1.0mm max.) DEA252400BT-2030A1 (2.5×2.0×1.0mm max.) DEA252450BT-2024D4 (2.5×2.0×1.0mm max.)

BAND PASS FILTER

Abstract: RFBPF
Contextual Info: Approval sheet RFBPF Series – 2012 0805 - RoHS Compliance MULTILAYER CERAMIC BAND PASS FILTER Halogens Free Product 2.4 GHz ISM Band Working Frequency P/N: RFBPF2012040AHT *Contents in this sheet are subject to change without prior notice. Page 1 of 7 ASC_RFBPF2012040AHT_V04

Contextual Info: < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the

transistor j326

Abstract: PD84010-E a05t DB-84010-860 EXCELDRC35C GRM42-6 102J EEVHB1V100P
Contextual Info: DB-84010-860 Evaluation board using PD84010-E for 900 MHz 2-way radio Features • Excellent thermal stability ■ Frequency: 760 - 860 MHz ■ Supply voltage: 7.2 V ■ Output power: 8 W ■ Power gain: 11.3 ± 0.3 dB ■ Efficiency: 53 % - 58 % ■ Load mismatch 20:1

Contextual Info: <Silicon RF Power Modules > RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO BLOCK DIAGRAM DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range.

RA20H8087M

Abstract: RA20H8087M-101 20W power transistor
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

RA45H7687M1

Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-026-B Date : 21st Feb. 2007 Rev.date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control

RA45H7687M1

Abstract: RA45H7687M1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to

ta1294

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 915.0MHz Part No: MP03642 Model: TA1294A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC Voltage: 3V

RA45H7687M1

Abstract: RA45H8994M1 PIN3D mitsubishi Lot No
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027-A Date : 10th May. 2007 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1

Contextual Info: 1/2 Multilayer Chip Band Pass Filters For 2.4GHz W-LAN/Bluetooth Conformity to RoHS Directive DEA Series DEA202450BT-2135E2 SHAPES AND DIMENSIONS RECOMMENDED PC BOARD PATTERNS 2.6 0.95±0.05 2.0±0.15 1.7 0.55 1.5 0.35 2 1.6±0.15 0.25±0.20 Terminal functions

Contextual Info: 1/2 Multilayer Chip Band Pass Filters For Bluetooth & 2.4GHz W-LAN Conformity to RoHS Directive DEA Series DEA202441BT-2106A2 SHAPES AND DIMENSIONS 0.35 0.75 0.25±0.2 Terminal functions 1 IN 2 OUT 3 GND 4 GND 1.85 3 1.6±0.15 1.5 0.25±0.2 2 2.6 1.7 1.25±0.15

mitsubishi Lot No

Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL: