7S03BSD Search Results

SSM05

Contextual Info: R S M ELECTRON/SENSITRON 1ÔE D • 7S03bSD D O G G S ? 11] 5 i T - O '3 - 1 7 SENS/TRON SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 FAX 516 242 9798 TECHNICAL SPECIFICATIONS 1000 VOLT 60 NANOSECOND SURFACE MOUNT

Contextual Info: ±T SENSITRON S M ELECTRON/SENSITRO 5ME D • 7S03bSD 0000134 Sbb ■ SEN SHD3001P SHD3002P _ SEMICONDUCTOR T -0 3 -1 9 TECHNICAL DATA SHEET DATASHEET 101 REVISION B TO-254 STYLE 30 AMP 200/300 VOLT 35 NANOSECOND

2222l

Abstract: SL1515 SL1515HEL JANTX 2222 SL15100L SL1560FRL SL1560S7L single phase full controlled rectifier
Contextual Info: 'T ^ 3 < > r7 R S M ELECTRON/SENS IT RON 1SE D | 7S03bSD 00007=15 T | SENS/TRON SEMICONDUCTOR 221 l/Vesf Industry C ourt • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 FAX 516 242 9798 TECHNICAL SPECIFICATIONS AVAILABLE WITH JAN, JANTX OR

Contextual Info: 5- Half Bridge MOSFET Module With Gate Driver: Description: Features: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices

Contextual Info: SENS,TR0N DATASHEET 134 REVISION— SHD SERIES SURFACE MOUNT SCHOTTKY RECTIFIERS SINGLE RECTIFIERS TYPE NUMBER PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT Tc = 100°C MAXIMUM FORWARD VOLTAGE SHD1151 25°C 125°C MAXIMUM MAXIMUM REVERSE MAXIMUM JUNCTION

48v 150A mosfet switch

Contextual Info: 8- Three-Phase Full-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/AC switch mode power supplies. Both the

Contextual Info: 4- Half Bridge MOSFET Module With Gate Driver: Features: Description: • These power modules are suited for high reliability switching applications such as motion control, U PS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices

SHDG1029

Abstract: SHDG1028 SHDG1030 SHDG1031 SHDG1032 SHDG1033 SHDG1034 SHDG1035 SHDG1037 SHDG1036
Contextual Info: 12.6- Hyper Fast IGBT Devices with a Fast Reverse Recovery Diode: IGBT Characteristics: Continuous Collector Current lc@Tc=90°C Continuous Collector Current lc @ Tc=25°C Volts Amps Amps Pulsed Collector Current Tc=25°C, 1 ms Amps 500 600 24 24 48 48 96

Contextual Info: 6- H-Bridge MOSFET Module With Gate Driver: Features: Description: •These power modules are suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers and the switching devices