2222L Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T M O S FET T ransistor N-Channel — Enhancement V N 2222LL 3 DRAIN Motorola Preformi Devlc« 1 SOURCE M A X IM U M R A T IN G S Rating Symbol Valua Unit Voss 60 Vdo vdgr 60 Vdc VGS ±20 ±40 Vdo Vpk Draln-Source Voltage

2222L

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA V N 2222L L S m all-S ignal Field E ffe c t T ransisto r N-Channel Enhancem ent-M ode S ilico n G ate T M O S N-CHANNEL SMALL-SIGNAL TMOS FET rDS on = 7 5 OHMS 60 VOLTS . . . are designed fo r high vo ltag e , high speed p o w e r sw itch in g ap­

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

2222l

Contextual Info: Tem ic SM« * VN0610L, VNIOKE/KM, 2222L N-Channel Enhancement-Mode MOS Transistors Zener Gate Protected Product Summary P a rt N um ber V BR DSS M in (V) VN0610L r DS(on) M ax (Q) 0.8 to 2.5 0.27 5 @ V GS = 10 V 0.8 to 2.5 0.17 5 @ V GS = 10 V 0.8 to 2.5

Contextual Info: u n ü \ i£ TECHNOLOGY LTCH48 L T C l l 4 8 - 3 . 3 / L T C 1 1 48-5 High EfficiencySynchronous Stepdown Switching Regulator N o v e m b e r 19 9 2 D C S C R IP T IO N • Ultra High Efficiency over 95% possible ■ Current M ode Operation fo r Excellent Line & Load

10kls

Abstract: 0610L VN10KLS 2222L VN0610L VN2222L
Contextual Info: VN0610L, VN10KLS, 2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

Contextual Info: _LTC1155 u f m TECHNOLOGY Dual High Side M icro p o w er MOSFET Driver F€RTUR€S D€SCRIPTIOfl • Fully Enhances N-Channel Power MOSFETs The LTC1155 dual high side gate driver allows using low ■ 8^A Standby Current cost N-channel FETs for high side switching applications.

Contextual Info: M OTQ/^L m i M M L i n Ç A :lectrlcal Specifications Specificati Final Electrical LT1575/LT1577 Ultrafast Transient Response, Low Dropout Regulators Adjustable and Fixed B TECHNOLOGY November 1996 F€flTUR€S DCSCRICTIOn • UltraFast Transient Response Eliminates

10kls

Abstract: 2222l 0610L VN10KLS VN2222L marking CODE VN VN0610L
Contextual Info: VN0610L, VN10KLS, 2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

phillips 031 ko Capacitor

Abstract: laptop mother board voltage details LT1432 LT107C amplifier circuit diagram techno 5a schematic diagram of laptop inverter LT1171 buck npn fet EI type bobbin 8 pin ic used in laptop
Contextual Info: | Ar* *« _ u rre A ß TECHNOLO GY LT1432 5 v High E fficie n cy S te p -D o w n S w itch in g R e g u la to r C o n tro lle r F€fiTUR€S DCSCMPTIOn • ■ ■ ■ ■ ■ ■ ■ The LT1432 is a control chip designed to operate with the LT1170/LT1270 family of switching regulators to make a

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

1N5B19

Abstract: BT 1608C 2222LL TOKIN 449 LM358L L52B regulator Diode 1n5b19 68pH
Contextual Info: MIC4575 200kHz Simple 1A Buck Voltage Regulator Preliminary Information General Description Features Fixed 200kHz operation 3.3V, 5V, and adjustable output versions Voltage over specified line and load conditions: Fixed version: ±3% max. output voltage Adjustable version: ±2% max. feedback voltage

intel 4308

Abstract: 221-121 4001 intel rom Intel 4001 P 4308 INTEL I8022 intel 8755 8021 microcomputer C2608 D8355
Contextual Info: P ß S O IS S lO K IÄ IS V 3636B 16K 2K x 8 BIPOLAR PROM 3636B-1 35 ns M ax 3636B-2 45 ns M ax • Fast Access Time: 25 ns Typically ■ Three-State Outputs ■ Low Power Dissipation: 0.05mW/Biit Typically ■ Hermetic 24-Pin DIP ■ Polycrystalline Silicon Fuses for

10kls

Abstract: 2222L VN2222L VN10KLS 0610L VN0610L vishay siliconix code marking to-92
Contextual Info: VN0610L, VN10KLS, 2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5

Digital IC CMOS 16x1 mux

Abstract: PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux
Contextual Info: b42?525 00437T3 TTT « N E C E |^ | 1^1 t w C B-C7, 3-VO LT 0.8-M IC R O N c e l l - b a s e d c m o s a s ic NEC Electronics Inc. C Preliminary Description The CB-C7,3-volt cell-based product family is intended for low power portables and battery-operated products. A

A910

Abstract: mx68gl1g0 MX68GL1G0FHMI-11G
Contextual Info: MX68GL1G0F H/L-70SSOP MX68GL1G0F H/L 70SSOP DATASHEET P/N:PM1750 REV. 0.00, AUG. 23, 2011 1 MX68GL1G0F H/L-70SSOP Contents 1. FEATURES. 6

p-channel pin mosfet 5102

Abstract: LTC1267
Contextual Info: / " T li n ü M L TECHNOLOGY LTC1142/LTC1142L/LTC1142HV Duai High Efficiency Synchronous Step-Down Switching Regulators FEATURES DCSCRIPTIOn • Dual Outputs: 3.3V and 5V or User Programmable ■ Ultra-High Efficiency: Over 95% Possible ■ Current Mode Operation for Excellent Line and Load

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

LM 358 battery charger schematic

Abstract: IC LM356 LM356 Heat Sinks for TO-220 packages TX-3001 TPS 4339 S/BIP/SCB345100/B/30/10/ferrite ei core 33A
Contextual Info: Application Note 15 Practical Switching Regulator Circuits by Brian Huffman O verview A golden power supply that will satisfy every design require­ ment does not exist. Size, cost, and efficiency are the driving factors for selecting a design, causing each design to be

pin diagram of full adder using Multiplexer IC

Abstract: tr f422 UPD65000 fj01 F713 f422 F715 PD65080 F-661 F-642
Contextual Info: N E C ELECTRONICS INC 7 5 D E ] b4E75B5 ODDfiBlfi 3 SEC NEC Electronics Inc. T-42-11 09 % ¿tPD65000 CMOS-3 SERIES cm os g a te a r r a y s 2 -m ic ro n January 1985 Description The//PD65000 (CMOS-3) series of gate arrays are lowpower, high-speed devices featuring 2-micron silicon

LT 1153

Contextual Info: /Turm LTC1153 T E C H N O LO G Y Auto-Reset Electronic Circuit Breaker FCRTURCS DCSCRIPTIOH • Programmable Trip Delay: 15ns to >100ms The LTC1153 electronic circuit breaker drives a low cost ■ Programmable Trip Current: 1 mA to >20A N-channel MOSFET to interrupt power to a sensitive