7TFCJ4142 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung

22W04

Abstract: KM62256CLG-LV KM62256CLRG-LV KM62256CLTG-LV
Contextual Info: KM62256CL-LV CMOS SRAM 32,768 WORD x 8 Bit Extended Voltage OperationCMOS Static RAM FEATURES • Extended Operating Voltage : 3.0-5.5V • Fast Access Time -3.3V Operation : 100ns Max. -5V Operation : 70ns(Max.) • Low Power Dissipation Standby operating

Contextual Info: Preliminary KS16121 DSP for Digital Answering phone with FLASH interface INTRODUCTION KS16121 is a digital signal processor IC that implements all the funct­ ions and hardware interfaces necessary for voice compression, storage and digital telephone answerer.