7N80 TO220 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a

7n80

Abstract: 7N80 TO220 7N80L-TF3-T 66a 523
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

7N80 TO220

Abstract: 7n80
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum

7N80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum

7N80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET 1   * RDS on <1.8Ω@ VGS =10V * High switching speedY * 100% avalanche tested  1 1 TO-220F2 TO-220F1 1 1 FEATURES TO-220F TO-220 DESCRIPTION The UTC 7N80 is an N-channel mode power MOSFET using UTC’s

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

Contextual Info: 3VD450800YL 3VD450800YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD450800YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.

7n80

Abstract: Al3m 7N80 TO220 3VD450800YL
Contextual Info: 3VD450800YL 3VD450800YL 高压MOSFET芯片 描述 ¾ 3VD450800YL为采用硅外延工艺制造的N沟道 增强型800V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W