7RB414E Search Results
7RB414E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SAMSUNG ELECTRONICS INC b?E D WË 7 T b 4 m 2 D017bm KM611001 330 • SnGK CMOS SRAM 1MX1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) |
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D017bm KM611001 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin | |
C1204B
Abstract: t2g memory
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OCR Scan |
KM416C1204BJ 16Bit C1204B t2g memory | |
Contextual Info: KM44C16104AK CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , |
OCR Scan |
KM44C16104AK 16Mx4 16Mx4, 512Kx8) 7Rb414E 0D343bl 00343b2 | |
Contextual Info: K M 4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time |
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256Kx16 16C256DJ 40SOJ KM416C256DJ 7Rb414H | |
Contextual Info: KMM37 2 V 4 0 0 B K D R A M Mo d u l e ELECTRO NICS KMM372V400BK/BS / KMM372V41OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The |
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KMM37 KMM372V400BK/BS KMM372V41OBK/BS 4Mx72 KMM372V40 KMM372V400BK cycles/64ms 300mil KMM372V41OBK | |
TS 4142
Abstract: FS2J SCO-101 SF 129 C D037 KS7301B Camera AF microcontroller lrj b3 SSD controller IC
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KS7301B KS7301B 16bit* 160-QFP-2424 SADR32 SADR40 20Bit) SADR41 SADR42 TS 4142 FS2J SCO-101 SF 129 C D037 Camera AF microcontroller lrj b3 SSD controller IC | |
Contextual Info: R r e fi^ in & r / KM6161002B/BL, KM6161002BI/BLI CMOS SRAM 6 4 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12*‘ Max. •• Low Power Dissipation The KM6161002B/BL is a 1,048,576-bit high-speed Static Ran |
OCR Scan |
KM6161002B/BL, KM6161002BI/BLI KM6161002B/BL 576-bit 003bL74 44-SOJ-400 44-TSOP2-400F | |
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its |
OCR Scan |
Tbm42 KM41V4000BLL KM41V4000BLL KM41V4000BLL-7 130ns KM41V4000BLL-8 150ns KM41V4000BLL-10 100ns 180ns | |
LNK5000
Abstract: SDE5000
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OCR Scan |
SSP5000 LNK5000 SDE5000 |