7TB414B Search Results

01-I04

Abstract: KM641001A KM641001A-15 KM641001A-20
Contextual Info: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words

KM44C4104bk

Abstract: cd-rom circuit diagram
Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

gd243

Contextual Info: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

KM44V4004BS

Abstract: irf ddt D0350
Contextual Info: KM44 V 4 0 0 4 B S CMOS DR A M ELECTRONICS 4 M x4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

asea EH 9-10

Abstract: J 6920 A ite 8892 7420 pin configuration st 9318 KS8805BD 7809 A PI 505 7809 ct 8500-29 B KS8805B
Contextual Info: KS8805B UNIVERSAL PROGRAMMABLE PLL INTRODUCTION 1S-DIP-300A The KS8805B is a superior low power-programmable dual frequency synthesizer PLL which can be used in high performance CT-1 cord­ less phone system with frequency range under 60 MHz in ail over the

dram zip

Abstract: KM44C256D KM44C256
Contextual Info: KM44C256D CMOS DRAM 256K x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -6, -7 or -8 , power consumption (Normal

3hM22

Abstract: pin configuration of 8251 KM64BV4002J-12 KM64BV4002J-15
Contextual Info: KM64BV4002 CMOS SRAM 1Mx4Bit With / OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)

KM44C4100BS

Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
Contextual Info: KM44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

17N55

Contextual Info: N-CHANNEL POWER MOSFETS SSH17N60/55 FEATURES • L o w e r R d s io n • Improved inductive ruggedness • Fast switching times • Rugged polysiiicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: K M 4 1C 4 0 0 0 D J CMOS DRAM ELECTRONICS 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly

Contextual Info: KM48V514DT CMOS DRAM ELECTRONICS 5 1 2 K x 8 B i t C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

dc/SMD ad34a

Contextual Info: K M 4 4 V 16004AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. ,

MARKING 9AB

Abstract: 9AB TRANSISTOR Code 9CB BC859 BC846 BC856 BC860 sot 23 mark 9CB
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 • Complement to BC846 . BC8S0 SO T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C

KM28C64B

Contextual Info: SAM SUN G E L E C T R O N I C S INC b?E D • TibmMZ □□Ibô'ïE 777 H S M â K PRELIMINARY KM28C64B/KM28C65B CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable PR O M FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64B/65B: Commercial

mask rom 4M

Contextual Info: SAMSUNG ELECTRONICS INC b?E » DG17GDÔ b l 3 KM23C41 OOB G/FP SriGK CMOS MASK ROM 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.)

Contextual Info: KM48C514B, KM48V514B CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM29N16000AR Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

Contextual Info: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The KMM372C225A - 6 KMM372C225A - 7

GD341

Abstract: taa 723 KM44C1000D KM44V1000D km44c1000dj-7
Contextual Info: KM44C1000DJ CMOS DRAM ELE C T R O N IC S 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

"Video RAM"

Contextual Info: KM4216C/V255 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 C M OS DRAM. The RAM port has a write per bit m ask capability. * Dual port Architecture 256K x 16 bits RAM port

Contextual Info: CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12,15,17,20 ns Max. • Low Power D issipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.) KM681002A-15 : 190 mA (Max.)

Contextual Info: CMOS DRAM KM44C4103A/AL/ALL/ASL 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRA C tCAC tR C K M 44C 4103 A /Ä L /Ä L L /A S L -5 50n s 13ns 9 0 ns K M 44C 4 1 0 3 A / A L /A L L /A S L -6 60n s 15n s

Contextual Info: KMM372V1600AS ELECTRONICS DRAM Module KMM372V1600AK/AS & KMM372V1680AK/AS Fast Page Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V160 8 0 A is a 16M bit x 72 • Part Identification Dynamic RAM high density memory module. The