GD243 Search Results

gd243

Contextual Info: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

Contextual Info: MITSUBISHI MICROCOMPUTERS 3826 Group SINGLE-CHIP 8-B IT CMOS MICROCOMPUTER DESCRIPTION • A-D -b itX 8 channels The 3826 group is the 8-bit microcomputer based on the 740 family core technology. The 3826 group has the LCD drive control circuit, the

qml-38535

Abstract: CQCC1-N20 GDFP2-F20
Contextual Info: REVISIONS DESCRIPTION LTR DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 18 REV SHEET

AT139

Contextual Info: Preliminary Data Sheet February 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations DSP1627 Digital Signal Processor 1 Features 2 Description • The DSP1627 is Lucent Technologies Microelec­ tronics Group’s first digital signal processor offering

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

Contextual Info: Advance Information KM29V64000T/R FLASH MEMORY 8M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64000T/R is a 8M 8,388,608 x8 bit NAND • Organization Flash memory with a spare 256K(262,144)x8 bit. Its - Memory Cell Array

Contextual Info: KM29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V32000T/R is a 4M 4,194,304 x8 bit NAND • Organization Flash memory with a spare 128K(131,072)x8 bit. - Memory Cell Array : (4M +128K)bit x 8bit

007H

Abstract: AN-994 IRF530S IRL2203N IRL2203S T35 diode DIODE marking code SJ
Contextual Info: PRELIMINARY International I R Rectifier PD 9.1091 A IRL2203S HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: b54Tfl2S 005434G L3T • M I T I MITSUBISHI LSIs M5M5257CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257C is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicongate

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

D0243

Contextual Info: FLASH MEMORY KM29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Celi Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

GD243

Abstract: K2413 BYX 13 400 R IC RTS 993 for electric bell GD243B D0243 autodata cd 2010 til 3010 datasheet MT90500 MT90500AL
Contextual Info: @ MITEL MT90500 Multi-Channel ATM AAL1 SAR S E M IC O N D U C T O R Features DS5171 AAL1 Segmentation and Reassembly device compatible with Structured Data Transfer SDT as per ANSI T 1.630 and ITU 1.363 standards ♦ Transports 64kbps and N x 64kbps traffic over