8 W BALLAST Search Results

HC1-5504DLC-5

Abstract: HC1-5504DLC-9 HC3-5504DLC-5 HC3-5504DLC-9 HC4P5504DLC-5 HC4P5504DLC-9 HC-5504 HC-5504DLC HC9P5504DLC-5 HC9P5504DLC-9
Contextual Info: NS DESIG W E N R ED F O 4B1 MEND HC550rt Center at M O d n C a E R B o 4 T p 55 NO S up m/tsc See HCr Technical rsil.co te n u .i o t w tac or w w or c on TERSIL N -I 8 8 1-8 May 1997 HC-5504DLC SLIC Subscriber Line Interface Circuit Features Description

IR2110 application note

Abstract: IR2101 full bridge IR2113 APPLICATION NOTE h bridge ir2110 full bridge ir2110 Full-bridge IR2110 IR2112 application note IR2104 APPLICATION NOTE h bridge ir2113 ballast Self-Oscillating
Contextual Info: International Rectifier Control IC Navigator Function Features Voltage Offset 8 Lead DIP 14 Lead DIP 14 Lead DIP w/o leads 4 & 5 16 Lead DIP w/o leads 4 & 5 28 Lead DIP 9 Pin SIP w/o leads 5&7 8 Lead SOIC Narrow Body Basic 600 IR2117 G IR2118 (G) IR2117S (G)

1538-08

Contextual Info: /T T SGS-THOMSON ^ 7 # S D 1 5 3 8 -0 8 RF & MICROWAVE TRANSISTO RS _ AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN APPLICATIONS ■ 200 W typ. IFF 1030 - 1090 MHz ■ 150 W (min.) DME 1025 - 1150 MHz

Motorola transistors MRF3104

Abstract: MRF3104 MRF3105 MRF3106
Contextual Info: MOTOROLA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 MRF3105 MRF3106 0.5 W 10.5 dB 0.8 W 9 dB 1.6 W 8 dB Output Power

TA7921

Abstract: 150 watt hf transistor 12 volt rca 632 2N5993 rca transistor RCA rf power transistor 452 transistor 225/TA7921
Contextual Info: File No. 452 0UQB//D ^ow er Transistors Solid State Division 2N5993 18-W CW 8 8 -M H z E m itterBallasted Overlay Transistor Silicon N -P-N T ype for 12.5-Volt Applications in V H F Com m unications Equipm ent Features: • ■ ■ ■ ■ Emitter-ballasting resistors

dimmable Fluorescent BALLAST

Abstract: dali power supply circuit diagram Fluorescent BALLAST IXI859S1 charge pump mosfet driver external ic driver mosfet for BLDC motor IXI858 dimmable HID BALLAST Depletion MOSFET hid ballast diagram
Contextual Info: I X I 8 5 8 / I X I 8 5 9 R E G U L AT O R / G AT E D R I V E R - N E W P R O D U C T B R I E F N E W P R O D U C T B R I E F Pin Description Component Pin Layout IXI858/IXI859 Regulator/Gate Driver INTERFACE IC PROVIDING ANALOG FUNCTIONS FOR MICROCONTROLLER IMPLEMENTATION

B20V1320B

Contextual Info: BIPOLARICS, INC Part Number B20V1320B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 8 W @ 1.0 GHz • Diffused Ballast Resistors

B30V1320B

Contextual Info: BIPOLARICS, INC Part Number B30V1320B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 8 W @ 1.0 GHz • Diffused Ballast Resistors

transistor 3l2

Abstract: 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225
Contextual Info: File No. 453 RF Power Transistors Solid State Division 2N5994 15-W AM and 3 5 -W CW E m itter- Ballasted Overlay Transistor Silicon N-P-N Device fo r 12.5-V A M and 2 8 -V FM Am plifiers in V H F Communications Equipm ent Features: • In 12.5 V AM 118-136 MHz commercial aircraft

Contextual Info: S G S -T H O M S O N S D 1 5 2 8 -0 6 m RF & MICROWAVE TRANSISTO RS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 20 W typ. IFF 1030 - 1090 MHz 15 W (min.) DME 1025 - 1150 MHz 15 W (typ.) TACAN 960 - 1215 MHz REFRACTORY GOLD METALLIZATION

TA7920

Abstract: equivalent of SL 100 NPN Transistor 2N5992 BT 812 7w RF POWER TRANSISTOR NPN RCA rf power transistor RCA Power Transistor 4 225
Contextual Info: File No. 451 DUGBÆ I ^ Power T ransistors Solid State Division 2N5992 7-W A M ,6 6 -to -8 8 -M H z E m itte r-B a lla ste d S ilic o n N -P -N O verlay Transistor For 12.5-V Am plifiers in V H F Com m unications Equipm ent Features • • • • 7-W min. carrier output, 10-dB min. gain at 88 MHz

Contextual Info: Panasonic S S ecwg iit it J lt S = Equipped with a Safety Mechanism= Metallized Polyester/Polypropylene Film Capacitor f /w x w w fs tfa y jv * Type Plastic Film Capacitors ECWG / ? 7 4 X K # >Ji X f ^ 7 4 IW A /# D 7 "n £ 1 ^ > 7 T > l'.A £ fflV » fc *S i§ 3 W *j& , * J I 5 t e i M B * - - X * 8 ,

Contextual Info: r z 7 S C S -T H O M S O N ^ • T /. m o e W iU K S W ffllg g A M 8 3 1 3 5 -0 0 1 RF & M I C R O W A V E T R A N S I S T O R S S -B A N D R A D A R A P P L I C A T I O N S . . . . . . . ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY

Contextual Info: [ Z J SGS-THOMSON * 7 w. RiflD g[S |[Li TIS©liaB(gi A M 8 0 9 1 2 -0 1 5 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EM ITTER SITE BALLASTED . 0 0 :1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE

Visil

Abstract: n1475 ferraz Ferraz Shawmut FLU011
Contextual Info: 2 0 /0 4 0 4 /1 8 /0 0 '0 0 0 8 :3 6 0 1 9 1 4158189 1 6 : 2 7 TAX 8 4 7 » 9 1 0 7 5 3 LITTELFITSE SALES LITTELFUSE INT'L SALES 0002/002 l^OOZ -> XJf UK Midget Fuses Littetfuse' Supplementary Overcurrent Protection O *+ 1 + 0 O p o w r - g a r d “ products

Contextual Info: SGS-THOMSON :IL[i g?GMD § M S C 8 1 118 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC STRIPAC PACKAGE ■ P o u t = 2.0 W MIN. WITH 10 dB GAIN @ 1.0 GHz DESCRIPTION

SC81058

Abstract: SC8105
Contextual Info: SGS-THOMSON :IL[i g?GMD § M S C 8 1 058 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ REFRACTORY/GOLD METALLIZATION ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS ■ HERMETIC STRIPAC PACKAGE . P out = 10 W MIN. WITH 10 dB GAIN

Contextual Info: SGS-THOMSON :IL[i g?GMD § M S C 8 1 002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC STRIPAC PACKAGE ■ P o u t = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHz DESCRIPTION

1417-11

Abstract: MRA1417
Contextual Info: MO TO ROLA • SEMICONDUCTOR TECHNICAL DATA MRA1417 Series The RF Line M ic ro w a v e P o w er Transistors 7 to 8 dB 1.4-1.7 GHz 2 TO 25 WATTS BROADBAND MICROWAVE POWER TRANSISTORS . . . designed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in

rf ic 3358

Abstract: MRF248 VK200 ferrite choke VK200-20-4B
Contextual Info: M O T O R O L A SC -CXSTRS/R F> i 6 3 6 7 2 5 4 M O T O R O ÖT L A S C X S T R S / R F i>E | b 3 b 7 S S 4 8 9 D 7 8 8 D070flt,fl 1 6 8 D T - 3 3 | - 1 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line MRF248 N P N S ilic o n R F P o w e r T r a n s isto r

GP141

Abstract: MRW53102 GP-141 MRW53402 TRW53102
Contextual Info: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M R W 53102 Series The RF Line M ic ro w a v e Linear P o w e r T ra n sisto rs 7 TO 8 dB 1 -3 GHz 1.6 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . desig n ed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in th e 1 to 3

2SC2528

Contextual Info: _ _ _ ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC2528 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 2 5 2 8 is a silicon N P N general purpose, m edium po w e r transistor fabricated w ith Fujitsu's u nique Ring E m itte r Transistor R E T technology. R E T devices are

TP5002

Abstract: TP5002S TPS002 TP500 1N4148 BD136
Contextual Info: MOT OROL A SC XSTRS/R F 4bE b3b7ES4 D 001524*1 3 «nO Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5002' TP5002S The RF Line UHF Linear Power Transistors 1.5 W — 3 8 0 t o 5 1 2 M H z U H F LIN E A R P O W E R T R A N S IS T O R S N P N S IU C O N The TP5002/S are NPN gold metallized transistors using diffused ballast resistors for

acrian RF POWER TRANSISTOR

Abstract: transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power
Contextual Info: O 1 8 2 9 9 8 . ACFjtlAN INC J97D ACRIAN INC ~T7 de 01406 r in ia e ooomoh □ ilKORIAN GENERAL 2005 D E S C R IP T IO N The 2005 is a common base transistor capable of providing 5 watts of C W RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed