300YS Search Results

IRF3710 equivalent

Contextual Info: International IO R Rectifi Of_ PRELIMINARY pd-9.i387a IRFI3710 HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V qss = 100V

BKC Semiconductors

Abstract: DSAIH0002561
Contextual Info: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.

FMM-1718

Abstract: FMMT720 FMM1717 1DA SOT23 FMMT617 FMMT618 FMMT619 FMMT717 FMMT718 FMMT722
Contextual Info: E-1 I H ‘“”’’’”T’’’’” I I THERMAL CHARACTERISTICS AND DERATING INFORMATION .60 -40 -20 ?0 40 60 AMBIENT TEMPERATURE DEG DERATING 00 >00 120 140 160 CELSIUS CURVE 200 : l.1 150 s z < !7J 100 m s 2 z $ !- 50 O.lms 1ms 1Oms PuLSE MAXIMUM

ZTX753

Abstract: T092 ZTX752 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSARS0022094.
Contextual Info: I PNP SILICON PLANAR MEDIUM I POWER TRANSISTORS I ZTX752 ZTX753 II 1 ISSUE 2- JULY 94 FEATURES ‘ 100 volt VCEC * 2 Amp continuous * Low saturation * PtOt=1 ‘Watt current voltage E-Line 4BSOLUTE MAXIMUM 1 RATINGS. SYMBOL PARAMETER — Collector-Base Voltage

Contextual Info: bDE D <^70570 0D07T05 • Dlfi I IZETB ZETEX S E M I C O N D U C T O R S P-channel enhancement mode vertical DMOS FET ZVP1320 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

ksp92

Abstract: KSP-92
Contextual Info: KSP92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA= 2 5 t Characteristic Sym bol : KSP82 : KSP93 Collector-Em itter Voltage : KSP92 : KSP93 Veso Emitter-Base Voltage Collector Current Collector Dissipation (TA* 25X:)

GR 733

Abstract: IR 733
Contextual Info: N-CHANNEL POWER MOSFETS IRFS730/731/732/733 FEATURES TO-220F • Low er Rds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

1RFD123

Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

N-Channel Power MOSFETs

Contextual Info: RFP4N05 RFP4N06 23 HARRIS N-Channel Enhancement-Mode Power Fleld-Effect Transistors August 1991 Features Package T O -2 2 0 A B • 50A, 50V and 60V TOP VIEW • rDS on = ° - 8 fl • SOA is Power-Dissipation Limited D R A IN (FLANGE) • Nanosecond Switching Speeds

st400l21

Contextual Info: ST400L21 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA HIGH POWER SWITCHING. INDUSTRIAL APPLICATION Unit in mm DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. 8 - 04.0 ± 0 8 . High Voltage : VCEO SUS =800V . Triple Diffused Design MAXIMUM RATINGS (Ta=25°C)

IRF7504

Contextual Info: PD - 9.1267G International IO R Rectifier IRF7504 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching

1RLML2402

Abstract: RLML2402 MARKING CODE PARI SOT23 MARKING tAN SOT-23 diode IRLML2402 rasistor 1RLML mosfet marking code AL sot-23 marking bad sot-23 076A
Contextual Info: 567- öt-b P D - 9.1257 International H I Rectifier IRLML2402 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching Voss = 20V R DS(on) =

Contextual Info: KST2222A NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS <Ta = 25°C Characteristic Collector-Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

D3341C

Abstract: 34B SOT FDC6322L d0334 Supersot 6
Contextual Info: June 1997 FAIRCHILD ADVANCE INFORMATION SEMICONDUCTOR m , FDC6322L Integrated Load Switch General Description Features T h e s e In teg rated Load Switctes a re produced using Fairchild's proprietary, high cell density, D M O S technology. This v e ry high density process is especially tailored to

D289

Contextual Info: PD-2.269 International [^Rectifier 62c n q o 3 o SCHOTTKY RECTIFIER 60 Amp Description/Features Major Ratings and Characteristics Characteristics 62CNQ030 Units ' f AV Rectangular waveform 60 A VRRM 30 V lFSM @tp-5pssine 4600 A VF 0.35 V TJ 30 Apk, T j - 1 25°C

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

RUR3060

Abstract: RUR3040 RUR3050 power supply 12v 1a
Contextual Info: RUR 3040 R U R 3050 RUR 3060 u a d d i q H A K K IO SbE 1 • « 0 2 2 7 1 DD423T2 502 * H A S HARRIS SEMCONt SECTOR 30A Ultrafast Diode With Soft Recovery Characteristic May 1991 Features Package T0 -22 0A C TOP VIEW • Ultrafast w ith Soft Recovery Characteristic

long life electrolytic capacitor

Abstract: PEH 160 PEH330MZ4680M KF 07 PEH 300 3300 uf 385 volt 4550R 330SY
Contextual Info: PEH 300 electrolytic capacitors PEH 300 • Long Life Grade • Low ESR and ESL 85°C Snap-In Electrolytic Capacitor • PCB Mounting • High ripple current Application Basic design Typical applications for PEH 300 would be electric drives, welding equipment,

2N5962

Abstract: 2N5963 2N59 2N5961
Contextual Info: 2N5961 2N5962 2N5963 Central semiconductor Corp. ♦I NPN SILICON TRANSISTOR JEDEC TO-92 CASE EBC 1 4 5 Adam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5961 Series types are Epoxy Molded Silicon NPN Transistors manu­

Contextual Info: 91D 02694 A3686-02 SOL ITRQN D F V ICES INC "t i SOLITRON DEVICES INC de D I Û3fc.ab02 ¡¿¡olitron Devices, Inc. NO.: S P E C I F I C A T I O N S OOOEb^ 5 SDT89501 T Y P E : PN P S I L I C O N TR A N S, C A S E : T O - 68 MAXIMUM RATINGS Voltage, Collector to Base V C B 0

Contextual Info: 8368602 SOL ITRON DEVICES INC_ 91D 0 2697 D T* ^ 3 3 S0LITR0N DEVICES I N C Ï Ï 1>e | 03bflbQ5 DGQabl? □ | Cjolitron Devices, Inc. S P E C I F I C A T I O N S N0<: SD T89701 T Y P E : PNP SILICON PWR. TRANS, M A X IM U M R A T IN G S CASE: TO“ 228/ AC

SDT899

Contextual Info: 83 686 02 SOL ITRON DE VI CE S INC 9 1 D 02701 Bolitron Devices, Inc. TI D Ì È )fl3bflbD a NO.: S P E C I F I C A T I O N S Tm 3 □□□E7Q1 T SDT89902 TYPE: PNP SILICON PWR. TRANS. CASE: TO-114 M AXIM UM RATINGS Voltage, Collector to Base VCB0) .

SDT899

Contextual Info: 8368602 SOLITRON DEVICES INC_ S0LITR0N DEVICES INC S o litro n 9 1D 0 2 700 D T ’ "'3 3 ' 5 2 3 DlF| üBhöhDS 0GDE7DD 7 Devices, Inc. NO.: S P E C I F I C A T I O N S SDT89901 T Y PE : PNP SILICON PWR. TRANS. C A SE : TO-114 M A X IM U M R A T IN G S