80 WATTS POWER AMPLIFIER Search Results

Contextual Info: MPP0801K0500-4 DATA SHEET 4 Way High Power Broadband Combiner N Connectors From 80 MHz to 1,000 MHz Rated at 500 Watts MPP0801K0500-4 is a 4 way High Power Broadband RF Combiner with a max input power at 500 watts operating from 80 to 1000 MHz with 50 ohm N connectors.

Contextual Info: MPP0801K0200-4 DATA SHEET 4 Way High Power Broadband Combiner SMA Connectors From 80 MHz to 1,000 MHz Rated at 200 Watts MPP0801K0200-4 is a 4 way High Power Broadband RF Combiner with a max input power at 200 watts operating from 80 to 1000 MHz with 50 ohm SMA connectors.

Contextual Info: Solid State Pulsed Power Amplifier High Power Pulsed L Band Solid State RF Amplifier • Aethercomm Part Number SSPA 1.35-1.45-80 is a Minimum output power = 80 Watts @ 85C base plate high power, pulsed solid-state amplifier used for military telemetry and data transmission. This SSPA supports

burle

Abstract: TP-105 TP-118 TP-122
Contextual Info: Return To Product Page 6884 Power Tube Beam Power Tube - CERMOLOX - Oxide-Coated Cathode - Forced-Air Cooled - 80 Watts CW Power Output at 400 MHz - 40 Watts CW Power Output at 1215 MHz BURLE-6884 is a compact, forced-air cooled UHF beam power General Data

tube 7457

Abstract: TP-105 TP-118 TP-122 burle radiator 0,019
Contextual Info: Return To Product Page 7457 Power Tube Beam Power Tube - CERMOLOX - Ruggedized - Matrix-type Cathode - Forced-Air Cooled - 80 Watts CW Power Output at 400 MHz J - 40 Watts CW Power Output at 1215 MHz BURLE 7457 is a compact, forced-air cooled UHF beam power

TP-105

Abstract: TP-118 TP-122 erie ceramic radiator 0,019
Contextual Info: Return To Product Page 4631 Power Tube Beam Power Tube - Cermolox - Ruggedized - Oxide-Coated Cathode - Forced-Air Cooled - 80 Watts CW Power Output at 400 MHz - 40 Watts CW Power Output at 1215 MHz BURLE 4631 is a compact, forced-air cooled uhf beam power

Contextual Info: 4 Way High Power Broadband Combiner From 80 MHz to 1,000 MHz Rated at 500 Watts, Type N TECHNICAL DATA SHEET PE20S0006 PE20S0006 is a passive 4 way High Power Broadband RF Combiner with 50 ohm N connectors operating from 80 to 1000 MHz, with a max input power at 500 watts. The PE20S0006 has greater than 12 dB typical isolation, less than 0.75 dB typical

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

Contextual Info: 4 Way High Power Broadband Combiner From 80 MHz to 1,000 MHz Rated at 200 Watts, SMA TECHNICAL DATA SHEET PE20S0005 PE20S0005 is a passive 4 way High Power Broadband RF Combiner with 50 ohm SMA connectors operating from 80 to 1000 MHz, with a max input power at 200 watts. The PE20S0005 has greater than 12 dB typical isolation, less than 0.75 dB typical

2N5684G

Abstract: 2N5686G 2N5684 2N5686
Contextual Info: 2N5684 PNP , 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS

2SA70

Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit

ADC 808

Abstract: BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S
Contextual Info: BD808 BD810 * Plastic High Power Silicon PNP Transistor *ON Semiconductor Preferred Device . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS

BD24x

Abstract: BD241CG BD242CG
Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features

tip137

Abstract: tip13 TIP13x tip131
Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 70 WATTS

Contextual Info: TIP131, TIP132 NPN , TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 70 WATTS

Contextual Info: BD241C NPN , BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON 3 AMP 80−100 VOLTS 40 WATTS Features

2N5037

Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi

2N5684

Abstract: 2N5684G 2N5686 2N5686G
Contextual Info: 2N5684 PNP , 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features http://onsemi.com 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS

Contextual Info: 2N5684 PNP , 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features http://onsemi.com 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS

BD243CG

Abstract: WT1D
Contextual Info: BD243B, BD243C NPN BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS

Contextual Info: BD809 NPN , BD810 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

Contextual Info: BD243B, BD243C NPN BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80−100 VOLTS 65 WATTS

BD 140 transistor

Abstract: transistor BD 140 BD 139 140 BD139 h parameters BD NPN transistors BD139 power transistor bd139 transistor bd 138 BD 139 transistor BD135-D
Contextual Info: ON Semiconductor BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS

2SB681

Abstract: 80 watts power amplifier
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB681 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) APPLICATIONS ·For AF power amplifier use. ·Recommended for use in output stage of 80 watts power