8002 AMPLIFIER Search Results

Kodak KLI-8023

Abstract: CCD linear multispectral trilinear CCD transistor model h1a KLI-8023 KEK-4H0093-KLI-8023-12-5 kli-8013 Marking Code KLI-8023-AAA LDR sensor light dark sensor dark light sensor using LDR AND transistor
Contextual Info: SPECIFICATION SUPPLEMENT Revision 4.0 MTD/PS-0219 September 15, 2008 KODAK KLI-8023 IMAGE SENSOR 8002 X 3 TRI-LINEAR CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

1gg7-8002

Abstract: 1gg7
Contextual Info: Agilent HMMC-5027 2-26.5 GHz Medium Power Amplifier 1GG7-8002 Data Sheet Features • Wide-frequency range: 2-26.5 GHz • Moderate gain: 7 dB • Gain flatness: ±1 dB • Return loss: Input: -13 dB, Output: -11 dB • Low-frequency operation capability:

45580

Abstract: 1gg6-8002 TCA 430 1gg6 TCA 975 HMMC-5020 hmmc-5 tca 761
Contextual Info: Agilent HMMC-5618 6–20 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:

45580

Abstract: 1gg6-8002 4433 fet tca 761 1gg6 8002 amplifier HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Contextual Info: Agilent HMMC-5617 6–18 GHz Medium Power Amplifier 1GG6-8002 Data Sheet Features • High efficiency: 11% @ P–1 dB typical • Output power, P–1 dB: 18 dBm typical • High gain: 14 dB typical • Flat gain response: ±0.5 dB typical • Low input/output VSWR:

MPS5771

Abstract: transistor MPS5771 kli-8013 transistor model h1a KLI8013 LDR sensor light dark sensor kodak ccd kli KLI-8023 ccd linear array sensor LDR curve
Contextual Info: Eastman Kodak Company Technical Data Kodak Digital Science KLI-8023 Image Sensor Features • • • • • • • • • • • • • • Tri-Linear Color Array 3 x 8002 pixels 9um2 pixels. 12 line spacing between color channels. Single shift register per channel.

8002 amplifier

Abstract: 8002 AUDIO amplifier pliotron 8002 general electric
Contextual Info: G L-8 0 0 2 D ESC RIPTIO N & A N D R A T IN G E T I-1 7 5 PAGE 1 4 -4 5 PLIOTRON DESCRIPTIO N The GL-8002 is a three-electrode transmitting tube designed for use as a radio-frequency power amplifier at high frequencies. Multiple leads for both the filament and grid connectors

LDR sensor light dark sensor

Abstract: KLI-8023 KEK-4H0093-KLI-8023-12-5 Light Dependent Resistor LDR KLI-2113 KLI-6003 dark light sensor using LDR AND transistor KLI-8811 CCD KODAK KLI-2113 Photodiode Array 32 element
Contextual Info: Eastman Kodak Company Technical Data Kodak Digital Science KLI-8023 Image Sensor Features • • • • • • • • • • • • • • Tri-Linear Color Array 3 x 8002 pixels 9um2 pixels. 12 line spacing between color channels. Single shift register per channel.

md8003

Abstract: md8002 md8001 65407
Contextual Info: MD8001 SILICON MD8002 MD8003 NPN SILICON MULTIPLE TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front-end detectors and tem perature compensation ap­ plications. •

AN3844

Abstract: MC56F8006 8002 amplifier jm60 MC56F8002 MC56F8000 FFT DSC freescale MC556 MC56F8013 mosfet triggering circuit for dc motor
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3844 Rev. 0, 11/2009 MC56F8006 New Features: PDB, PGA, ADC, and PWM by: XiangJun Rong and KuangXin RegionTechnical Information Center 1 Introduction This application note introduces the new MC56F8006

Contextual Info: , < Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6049 MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . . . designed for general-purpose switching and amplifier applications POWER TRANSISTOR

8002 Amplifier IC

Abstract: MJ6316HX MJ6318HX
Contextual Info: 4 t E ? • b3fa?2S4 0013103 3 ■ f lO T b 7 = 3 3 -0 / MOTOROLA SC X S T R S / R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA NPN MJ6316HX, HXV PNP MJ6318HX, HXV NPN/PNP Silicon Complementary Power Transistors duo mini Discrete Military Operation . .designed for generat-purpose power switching and amplifier applications.

NS 8002 1151

Abstract: TO-66 CASE
Contextual Info: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications

2N5430 MOTOROLA

Abstract: 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428
Contextual Info: MOTOROLA SC XSTRS/R 1HE F D § b3b?ES4 GDflMSMb 1 | MOTOROLA 2N5428 TECHNICAL DATA 2N5430 SEMICONDUCTOR thru 7 AM PERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage —

2N4888

Abstract: 2N4900 MOTOROLA 2N488 2f5 transistor Motorola 2N4898
Contextual Info: 6367254 MOTOROLA SC CXSTRS/R F 96D 8Ö338 D T - z J - i f 2N4898 thru 2N4900 MOTOROLA TECHNICAL DATA MEDIUM-POWER PNP SILICO N TRA N SISTO RS 4 AM PERE . . . designed for driver circuits, switching, and amplifier applications. These high-performance devices feature:

2N6049

Abstract: 8002 Amplifier IC SM 8002 SM 8002 C 2443 MOTOROLA transistor 80417
Contextual Info: MOTOROLA SC 6367254 DE I t.3t,7SS4 ODflDMl t 1 | - CXS TRS/ R F J M OTO RO LA MOTOROLA SC XSTRS/R F 96.D 8 0 4 1 6 B S E M IC O N D U C T O R 2N6049 T -3 3 -2 ! TECHNICAL DATA MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . designed for general-purpose switching and amplifier applications

2N4912

Abstract: 2N4912 MOTOROLA
Contextual Info: MOTORGLA SC X S T R S /R F 1EE D I b3b?5S4 GQfl4517 2 | SEMICONDUCTOR 2N4912 " ^ 3 3 ' 0 e! MOTOROLA TECHNICAL DATA NPN SILIC O N TRANSISTO R 1 AMPERE . . . designed for driver circuits, switching, and amplifier applications. This high-performance device features:

te 2443 MOTOROLA transistor

Abstract: 2N4912
Contextual Info: ^ r¡ 6 367254 M O T O R O L A SC CXSTRS/R F DÊ”|fci3bïc!i4 UUÜUddä 96D 8Ö338 _ D if 2N4898 MOTOROLA ES SEMICONDUCTOR thru TECHNICAL DATA 2N4900 M EDIUM -PO W ER PNP S IL IC O N TR A N SISTO R S 4 AMPERE . . . designed for driver circuits, switching, and amplifier applications.

81-110 thermistor

Abstract: Cu50 measurement Cu53 rtd PT-100 385 4wire CU53 temperature sensor Landis Ni 1000 THERMISTOR kty kty PT-100 Cu50 RTD KTY81-110
Contextual Info: IB IL TEMP 2 RTD INTERBUS Inline Terminal With Two Analog Input Channels for the Connection of Temperature Shunts RTD Data Sheet 5755B 02/2001 5 7 5 5 1 0 0 1 This data sheet is intended to be used in conjunction with the "Configuring and Installing the INTERBUS Inline

FT152

Abstract: 2N6297 Motorola
Contextual Info: MOTORCLA SC XSTRS/R F 15E D I b3b?2S4 OOflMbSa T | 7 "-3 3 -¿ 9 7^33-3/ NPN MOTOROLA 2N6294, 2N629S SEMICONDUCTOR TECHNICAL DATA PNP 2N6296, 2N6297 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed fo r general-purpose amplifier, low-frequency switching

Contextual Info: r OCTAVE BAND AFS AMPLIFIERS FREQUENCY MODE! NUMBER RANGE GH^l GAIN IB M m i GAIN N O IS E FI A T N E S S FI G U R E ({IB Max I (dB M axi VSWR VSWR OUTPUT POWER INPUT OUTPUT a 1 dB COMP (M axi (M axi .d B m M in i N O M . DC POWER AFS O U TLIN E i * 1 5 V rn A i D R A W I N G

Contextual Info: Electrical contacts CES-CESA-CEI / Amplifier relay AREB-AYRA General Electrical contacts can be fitted to our instruments with nominal diameters 100, 150, 160 mm. They are adjustable from 10% to 90% of F.S. The overall dimensions, mounting and switching arrangements, operating limits pressure and temperature are all given in the corresponding documentation

2N6300

Contextual Info: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching

Ib il 2 hart

Abstract: 4E20
Contextual Info: IB IL AI 2-HART IB IL AI 2-HART-PAC Inline Terminal With Two Analog Input Channels and HART Functionality 6 7 5 8 A 0 0 1 Data Sheet 6758A 08/2002 The terminals IB IL AI 2-HART and IB IL AI 2-HART-PAC only differ in their scope of supply see "Ordering Data" on page 22 . They have the

gsm signal amplifier

Abstract: base station receiver GSM signal generator mhz gaussian filter prbs generator 8002 amplifier amplifier gsm signal GSM receiver Wideband FM Modulator Wider
Contextual Info: Application Note GSM Testing using the 2026 family Signal Generators with Option 116 Option 116 is available on the IFR 2026 family to allow it to generate GSM spectrum signals. The 2026 is ideal for performing tests on GSM multi-carrier amplifiers and GSM receivers.