801R4BN Search Results

Contextual Info: A dvanced O D O P O W E Ii Te c h n o l o g y APT801R2BNR 800V 9.0A 1.20Í2 801R4BNR 800V 8.5A 1.40Q S POWER MOS IV« UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS APT801R2BNR Parameter 800 Drain-Source Voltage

801R4BN

Abstract: 801R2BN APT801R2BN
Contextual Info: o ADVANCED POW ER Te c h n o l o g y D Ô S POWER MOS IV® APT801R2BN APT751R2BN 801R4BN APT751R4BN 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40Q 1.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T „ = 25°C unless otherwise specified.

801R2BN

Abstract: APT801R2BN 801R4BN 801r2 APT751R2BN APT751R4BN APT801R4BN
Contextual Info: o A D V A N CED R o w er Te c h n o l o g y D APT801R2BN APT751R2BN 801R4BN APT751R4BN Ô S POWER MOS IV« 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Q 1.20Q 1.40a 1.40a N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tr = 25°C unless otherwise specified.

SML801R4BN

Abstract: SML751R2BN LE17 SML751R4BN SML801R2BN max2301 751R2BN h-12-H
Contextual Info: INI SEMELAB PLC 6133107 bDE D OOOOfaSb ?6 T • S M L B _ MOS POWER E ^ E INI ä r T - l> ct - i S SEME SML801R2BN SML751R2BN 801R4BN SML751R4BN LAB 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Í2 1.20Í2 1.40Ü 1.40Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

801R4BN

Contextual Info: S F O D ò s f f it v A dvanced P ow er Te c h n o l o g y APT801R2BNR 801R4BNR / / / / , i mos n 800V 9.0A 1.200 800V 8.SA 1.400 UIS RATED i N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: O D O S A dvanced P ow er Te c h n o l o g y * APT801R2BNR 801R4BNR 800V 9.0A 1.2012 800V 8.5A 1.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.

sml801

Contextual Info: INI SEMELAB 6133107 bDE D PLC OOOOfaSb ?6 T • S M L B _ MOS POWER E ^ E INI ä r T - l> ct - i S SEME SML801R2BN SML751R2BN 801R4BN SML751R4BN LAB 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20Í2 1.20Í2 1.40Ü 1.40Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

801R2BN

Abstract: APT801R2BN
Contextual Info: A dvanced POW ER Te c h n o l o g y O D Ô APT801R2BN APT751R2BN 801R4BN APT751R4BN s ü í ’W tR MOS 800V 750V 800V 750V 9.0A 9.0A 8.5A 8.5A 1.20í> 1.20Q 1.400 1.40<> N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Ail Ratings: T c = 25 C unless otherwise specified.