802R8KN Search Results

APT802R4KN

Contextual Info: A d v a n ced P o w er Te c h n o l o g y • O D O APT802R4KN 802R8KN S 800V 4.7A 2.40 Q 800V 4.4A 2.80 Q P * W E R M O S IV< N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. Symbol Parameter

APT802R4KN

Abstract: APT802R8KN
Contextual Info: • r A dvanced W ZA P o w e r Te c h n o l o g y * APT802R4KN 802R8KN 800V 4.7A 2.400 800V 4.4A 2.80 Q POWER MOS IV@ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATING S Symbol V V DSS ’d m V GS pD V sT G All Ratings: Tc = 25°C unless otherwise specified.

802r8kn

Contextual Info: D TO-220 G APT802R4KN 802R8KN S 800V 4.7A 2.40 Ω 800V 4.4A 2.80 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS APT802R4KN 802R8KN UNIT Drain-Source Voltage

Contextual Info: SENELABPLC bOED • fll33107 DGGQb7h 5 7 7 M S H L B lili MOS POWER 4 ' ~ T ' 3 > CM 3 SEM E LAB SML802R4KN 802R8KN 800V 4.7A 2.4012 800V 4.4A 2.8012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

APT802R4KN

Abstract: 802r8kn APT802R8KN
Contextual Info: A d v P o w a n c e d e r Technology APT802R4KN 802R8KN 800V 4.7A 2.40 D 800V 4.4A 2.80Q P*W ER MOS IV® N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter APT802R4KN

PT802

Abstract: APT802R4KN
Contextual Info: O • R ADVANCED W . ^A P O W E R Te c h n o lo g y APT802R4KN 800V 4.7A 2.40U 802R8KN 800V 4.4A 2.800 D Ô S H * W E R M O S P U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS A ll R a tin g s : T c = 2 5 ° C u n le s s o th e rw is e s p e c ifie d .