80ITI Search Results
80ITI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
cep4060alContextual Info: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds ON =80iti Q D @ V gs =10V. R ds(on)=85itiQ @ V gs =5.0V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability. |
OCR Scan |
85itiQ O-220 O-263 to-263 to-220 CEP4060ALR/CEB4060ALR cep4060al | |
CEM9935Contextual Info: CEM9935 M arch 19 9 8 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 2 0 V , 4 A , RDS ON =60m Q @ V g s = 4 .5 V . Di Rds(on)=80iti Q @ V gs= 2.5 V . Di O2 D2 • Super high dense cell design for extremely low R ds(on). • High power and current handing capability. |
OCR Scan |
CEM9935 80iti yf-90% CEM9935 | |
MECP01Contextual Info: N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds on =80iti Q RDS(ON)=85mß @ V gs =1 0V. D @ V gs =5V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability. • TO-252 package. |
OCR Scan |
MECP01 O-252 to-252aa MECP01 |