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Littelfuse Inc


Littelfuse Inc IXFN80N50P MOSFET N-CH 500V 66A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN80N50P	Tube	2,950		1	1 $34.54 10 $25.55 100 $22.54 1000 $22.54 10000 $22.54	Buy Now
Newark	IXFN80N50P	Bulk	47		1	1 $21.22 10 $21.22 100 $21.22 1000 $21.22 10000 $21.22	Buy Now
RS	IXFN80N50P	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $33.12 10000 $32.07	Get Quote
Chip One Stop	IXFN80N50P	Tube	306	0 Weeks, 1 Days	1	1 $30.80 10 $23.40 100 $20.90 1000 $20.80 10000 $20.80	Buy Now
Littelfuse Inc IXFK80N50P MOSFET N-CH 500V 80A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK80N50P	Tube	825		1	1 $22.75 10 $22.75 100 $13.70 1000 $13.70 10000 $13.70	Buy Now
Newark	IXFK80N50P	Bulk			300	1 - 10 - 100 - 1000 $14.36 10000 $14.36	Buy Now
RS	IXFK80N50P	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $20.13 10000 $19.49	Get Quote
Littelfuse Inc IXFR80N50Q3 MOSFET N-CH 500V 50A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR80N50Q3	Tube	184		1	1 $34.90 10 $34.90 100 $23.03 1000 $22.83 10000 $22.83	Buy Now
Littelfuse Inc IXFN80N50Q3 MOSFET N-CH 500V 63A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN80N50Q3	Tube	76		1	1 $48.15 10 $38.33 100 $36.23 1000 $36.23 10000 $36.23	Buy Now
Littelfuse Inc IXFK80N50Q3 MOSFET N-CH 500V 80A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK80N50Q3	Tube	1		1	1 $32.52 10 $32.52 100 $20.91 1000 $20.91 10000 $20.91	Buy Now
RS	IXFK80N50Q3	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $30.72 10000 $29.75	Get Quote

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80N5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80N50P Abstract: IXFK 80N50P PLUS247 Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 65 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80N50P O-264 80N50P IXFK 80N50P PLUS247	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 G Preliminary data sheet S = 500 V = 80 A = 50 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500	Original	80N50 OT-227 E153432	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 80 A Ω < 75 mΩ < 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings	Original	80N50P 80N50P O-264 PLUS247	PDF
80N50D Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 = 500 V = 80 A = 48 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 OT-227 E153432 80N50D	PDF
80n50 Abstract: 80N50P ISOPLUS247 4525 GE alize Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C	Original	ISOPLUS247TM 80N50P 80n50 80N50P ISOPLUS247 4525 GE alize	PDF
80n50 Abstract: 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 75N50 OT-227 E153432 125OC 728B1 80n50 80N50 MOSFET IXFN SOT227 125OC 75N50 SNC80	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50 100kHz 125OC	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 227TM 728B1	PDF
80N50 Contextual Info: nixYs Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 80N50 V DSS 500 V 80 A 48 mQ I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS Tj =25°C to150°C 500 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2	OCR Scan	IXFN80N50 to150 OT-227 E153432 80N50	PDF
80N50 MOSFET Abstract: 80N50 75N50 SNC80 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS on 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	80N50 75N50 OT-227 E153432 728B1 80N50 MOSFET 80N50 75N50 SNC80	PDF
80n50 Abstract: 80N50 MOSFET Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50 227TM 728B1 80n50 80N50 MOSFET	PDF
Contextual Info: Advance Technical Information HiPerFET TM Power MOSFETs VDSS = ID25 = RDS on = ≤ trr IXFB 80N50Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	80N50Q 264TM 728B1	PDF
80N50P Abstract: IXFN 80N50P E153432 Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50P 80N50P IXFN 80N50P E153432	PDF
80N50Q2 Abstract: 0169E 123B16 Contextual Info: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol	Original	80N50Q2 OT-227 E153432 728B1 123B1 728B1 065B1 80N50Q2 0169E 123B16	PDF

80N50 Abstract: 80N50P IXFN 80N50P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM Transient Continuous	Original	80N50P 80N50 80N50P IXFN 80N50P	PDF
80N50P Abstract: IXFK 80N50P 80N50 PLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM	Original	80N50P 80N50P IXFK 80N50P 80N50 PLUS247	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 500 V = 45 A Ω ≤ 72 mΩ ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 80N50P	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 = 500 V = 80 A Ω ≤ 65 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C	Original	80N50P	PDF
80N50P Abstract: ISOPLUS247 PLUS247 Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	ISOPLUS247TM 80N50P ISOPLUS247 E153432 405B2 80N50P ISOPLUS247 PLUS247	PDF
80N50Q2 Abstract: 80n5 IXFB 80N50Q2 Contextual Info: HiPerFETTM Power MOSFETs IXFB 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80N50Q2 264TM 065B1 728B1 123B1 728B1 80N50Q2 80n5 IXFB 80N50Q2	PDF
80n50 Abstract: 80N50 MOSFET 125OC IXFN80N50 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on trr IXFN 80N50 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50 100kHz 125OC 80n50 80N50 MOSFET 125OC IXFN80N50	PDF
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions	Original	80N50Q2 264TM 728B1 123B1 065B1	PDF
Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	80N50P OT-227 E153432 405B2	PDF
80N50Q2 Abstract: IXFL80N50Q2 Contextual Info: HiPerFETTM Power MOSFETs IXFL 80N50Q2 VDSS = 500 V ID25 = 64 A Ω RDS on = 66 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80N50Q2 405B2 80N50Q2 IXFL80N50Q2	PDF

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80N5 Price and Stock

Littelfuse Inc IXFN80N50P

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Littelfuse Inc IXFR80N50Q3

Littelfuse Inc IXFN80N50Q3

Littelfuse Inc IXFK80N50Q3

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