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    80SQ045NRLG Search Results

    80SQ045NRLG Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    80SQ045NRLG
    		On Semiconductor Axial Lead Rectifier Original PDF 59.18KB 4
    SF Impression Pixel

    80SQ045NRLG Price and Stock

    onsemi

    onsemi 80SQ045NRLG

    DIODE SCHOTTKY 45V 8A AXIAL
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    DigiKey () 80SQ045NRLG Cut Tape 8,519 1
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    80SQ045NRLG Reel 7,500 1,500
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    Avnet Americas () 80SQ045NRLG Reel 1,500 9 Weeks 1,500
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    80SQ045NRLG Ammo Pack 13 Weeks, 1 Days 1
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    Mouser Electronics 80SQ045NRLG 13,146
    • 1 $0.91
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    Newark () 80SQ045NRLG Cut Tape 1,060 1
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    80SQ045NRLG Reel 1,500
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    Onlinecomponents.com 80SQ045NRLG
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    TME 80SQ045NRLG 1
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    Richardson RFPD 80SQ045NRLG 3,000
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    Avnet Asia 80SQ045NRLG 9 Weeks 3,000
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    Avnet Silica 80SQ045NRLG 10 Weeks 1,500
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    EBV Elektronik 80SQ045NRLG 10,500 11 Weeks 1,500
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    Flip Electronics 80SQ045NRLG 6,000
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    Master Electronics 80SQ045NRLG
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    Vyrian 80SQ045NRLG 3,476
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    onsemi 80SQ045NG

    Schottky Diodes & Rectifiers 8A 45V
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    Mouser Electronics 80SQ045NG 5,533
    • 1 $0.86
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    onsemi 80SQ045NRLG.

    Rectifier, Schottky, 8A, 45V, Do-201Ad; Repetitive Peak Reverse Voltage:45V; Average Forward Current:8A; Diode Configuration:Single; Diode Case Style:Do-201Ad; No. Of Pins:2Pins; Forward Voltage Max:550Mv; Forward Surge Current:140A Rohs Compliant: Yes |Onsemi 80SQ045NRLG.
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    Newark 80SQ045NRLG. Reel 1,500
    • 1 $0.56
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    80SQ045NRLG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		80SQ045N 80SQ045N/D PDF

    80SQ045NG

    Abstract: 80SQ 80SQ045N 80SQ045NRL 80SQ045NRLG MBR845
    Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		80SQ045N 80SQ045N/D 80SQ045NG 80SQ 80SQ045N 80SQ045NRL 80SQ045NRLG MBR845 PDF