8150 EDI Search Results

DOMINO

Abstract: DMN-8100 DMN-8150 compression mpeg 1 layer 2 mpeg4
Contextual Info: DoMiNo PC Peripheral Product Family DMN-8100/8150 OVERVIEW The LSI Logic DoMiNo ™ network media processor is the industry’s first programmable, single-chip, multi-stream, multi-format DV and MPEG audio/video system codec (encoder/decoder) architecture. This powerful and flexible architecture

AT8150

Abstract: AT-8150 M/AT8150
Contextual Info: ATF-45101 AT-8150 2-8 GHz Medium Power Gallium Arsenide FET What H EW LETT mL'fíM PACKARD 100 mil Flange Package Features High Output Power: 29.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression: 10.0 dB typical Gi dB at 4 GHz High Power Efficiency:

infineon radar

Abstract: infineon phased array radar
Contextual Info: GaAs Components Infineon tsjcKnti'og '«s Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development ot lll-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies

2SK1836

Abstract: 2SK1837 K1836 K1837 DSA003639
Contextual Info: 2SK1836, 2SK1837 Silicon N-Channel MOS FET ADE-208-1326 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter

gaas wafer

Abstract: k-band infineon phased array radar
Contextual Info: GaAs Components Introduction 1 Introduction Since 1975 Infineon Technologies former Siemens Semiconductors has been engaged in research and development of III-V semiconductor components and circuits. The world’s first commercially available GaAs MMIC was created by Infineon Technologies

T0002

Abstract: WF-1024K8-150I WF-1024K8-150M
Contextual Info: W W h ite Technology, Inc. MEMORY PRODUCTS W F -1 0 2 4 K 8 -1 5 0 1 Megabyte x 8 Flash PROM Memory Module ADVANCE INFORMATION SUBJECT TO CHANGE FEATURES • Flash Chip Erase * 1 Second Page Erase * 8 Pages Total ■ Fast Programming * 10uSec Typical Byte

Contextual Info: Code Nr. Page Nr. 8000 8002 8003 8004 8005 8006 8007 10/08 8008 8009 8010 8013 8014 8016 8021 8022 8023 Email: pada@pada.it Web: www.pada.it 18 37 37 38 39 39 39 75 19 45 44 43 8092 8104 8111 8112 8113 8114 8115 8116 8117 8119 8120 8121 8123 8124 Code Nr. Page Nr.

MSA 370

Abstract: IAM-82008 MSA-0835
Contextual Info: S ilicon M onolithic Integrated Circuits G en eral P u rp o se Am plifier» Typical Specifications at +25°C Case Temperature. GP@ 0.1GHz (dB) GP@ 1GHz (dB) N F@ 1 GHz (dB) PldB Min. Supply Voltage*8! Device Voltage!*! (dBm) (Vcc) (Vd) Device Current!*]

PTFA081501E

Abstract: BCP56 LM7805 PTFA081501F R-163
Contextual Info: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and

Contextual Info: PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for CDMA and

2SK1836

Abstract: 2SK1837 K1836 K1837
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

NEC k 3654

Abstract: gl 7445 nec k 813 NE850R599A nec 8725 gm 8562 5942 A 7601 0549
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE850R599A 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599A power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the thermal resistance, the device

mobility radeon 9000

Abstract: RADEON 9000 CY8C42XXX CY7C63800 psoc projects CY8C25-26xxx psoc example projects acer travelmate CY8C25xxx radeon mobility 9000
Contextual Info: Release Notes srn015 PSoC Designer Version 4.3 Beta Release Release Date: May 10, 2006 Thank you for your interest in PSoC Designer version 4.3. The information in this document lists installation requirements and describes software updates and changes.

uPB8289

Contextual Info: NEC mP B 8 2 8 9 BUS ARBITER NEC Electronics Inc. Description Pin Configuration The /jPB8289 bus a rb iter is used w ith the /¿PB8288 bus con tro ller to interface 8086 and 8088 m icroprocessors to a m u ltim a s te r system bus. The jiPB8289 co n tro ls

nec k 813

Abstract: NE850R599A nec 8725
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TCP 8126

Contextual Info: M ay 1992 Edition 1.1 FUJITSU DATA SHEET M B 9 8 A 8 0 9 2 X - / 8 1 0 2 x - / 8 1 1 2 x - / 8 1 2 2 x -2 5 FLASH MEMORY CARD FLASH ERASEABLE AND PROGRAMMABLE MEMORY CARD 512K / 1 M / 2 M / 4M -BYTE The Fujitsu MB98A8092x, MB98A8102x, MB98A8112x and MB98A8122x are

2SD 4206

Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

TRANSISTOR SMD 613

Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

Semicon volume 1

Abstract: AWM 2851 VW-1 AWM 2835 cable
Contextual Info: Industrial Cable S ERV IN G IN DU STR I AL , SP ECI ALT Y AN D COMMERCI AL AP P LI CATI O N S APRIL 2015 What’s New? Industrial Serving Industrial, Specialty and Commercial Applications GENFREE II LOW-SMOKE, ZERO-HALOGEN CABLE S This catalog contains indepth information on the

kaschke 093

Abstract: kaschke 093 266 kaschke 093 502 Mn-Zn Ferrites toroidal calculation FERRITE TOROIDAL CORE DATA 07 K250 core k2004 kaschke 071 transistor K2500
Contextual Info: Diese Broschüre bietet einen Überblick über Ferritringkerne unserer umfangreichen Produktpalette. Wir können keine Garantie dafür übernehmen, daß die in diesem Heft enthaltenen Spezifikationen, Anwendungen und Verfahren stets frei von Rechten Dritter sind.

TFK U 3212 M

Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6

Contextual Info: Product Catalogue Relays with forcibly guided contacts Product Catalogue - Relays with forcibly guided contacts Edition 12/2014 Publisher: ELESTA GmbH, Bad Ragaz, Switzerland All rights reserved. This work and its parts are protected by copyright. Any use in other than legally authorized cases requires the prior written consent of the publisher.

R400EX

Abstract: pc motherboard 8148 ibm RadiSys epc-3 Phoenix NuBIOS RadiSys exm-mx RadiSys epc-5 RADISYS R400EX Phoenix BIOS specification intel motherboard display problem repairing epc-5a
Contextual Info:  EPC -5A Hardware & Software Reference Manual RadiSys Corporation 5445 NE Dawson Creek Drive Hillsboro, Oregon 97124 Phone: 503 615-1100 Fax: (503) 615-1150 http://www.radisys.com 07-0870-01