8192X9 Search Results

ITT taa 775

Abstract: 81C79A MB81C79A-35 81c79 mb81c79a-45 mb81c79
Contextual Info: 484823535348485323232301534823530189 FUJITSU CMOS 73728-BIT STATIC RANDOM ACCESS MEMORY MB81C79A-35 MB81C79A-45 Novenber 1987 Edition 2.0 72K-BIT 8192x9 HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB 81C79A is 8192 words x 9 bits static random access memory

Contextual Info: FUJITSU MICROELECTRONICS 23E D 37417b2 0007=143 b • T -M t-z v iz . F U JIT S U September 1988 Edition 1.0 72K-BIT 8192x9 HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu M B 81C 79A -W Is 8 1 9 2 w ords x 9 b its static random access m em ory

Contextual Info: / 4096X9-BitRFO-Radiation Hardened 7204ERP Epi - CMOS Parallel Cascadeable FIFO QS2 In » DATA INPUTS Do - D b For Space Applications W- WRITE CONTROL m nT'n EH RAM ARRAY Z 12048 x 9 \ r 4096 X 9 8192x9 16384 x 9 WRITE POINTER THREESTATE BUFFERS S e I' s 7204ERP (RP for

HF 7205

Abstract: f 7205
Contextual Info: CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192x9 and 16384x9 IDT7203 IDT7204 IDT7205 IDT7206 FEATURES: DESCRIPTION: • • • • • • • The IDT7203/7204/7205/7206 are dual-port m em ory buff­ ers with internal pointers that load and em pty data on a firstin/first-out basis. The device uses Full and Em pty flags to

CQ823

Contextual Info: 4ÛE5771 0G2bm2 bhS CMOS SyncFlFO 8192X9 FEATURES: • • • • • • • • • • • • 8192 x 9-bit organization Pin/function compatible with IDT72421/722x1 family 15 ns read/write cycle time Read and write clocks can be independent Dual-Ported zero fall-through time architecture

AM7205A

Abstract: AM7205A-35RC
Contextual Info: Am7205A High Density First-in First-Out FIFO 8192x9-Bit CMOS Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS Status flags - full, half-full, empty • RAM based FIFO ■ 8192x9 organization Retransmit capability ■ Cycle times of 25/35/45 nanoseconds for

DS2009

Contextual Info: DS2013 DALLAS DS2013 8192x9FIF O C hip s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • First-in, first-out memory-based architecture • Flexible 8192 x 9 organization • Low-power HCMOS technology • Asychronous and simultaneous read/write 28 □ VCC

SO1215

Contextual Info: CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192x9 and 16384x9 IDT7203 IDT7204 IDT7205 IDT7206 FEATURES: DESCRIPTION: • • • • • • • The IDT7203/7204/7205/7206 are dual-port m em ory buff­ ers with internal pointers that load and em pty data on a firstin/first-out basis. The device uses Full and Em pty flags to

81c79

Abstract: mb81c79 81C79A MB81C79A-45-W
Contextual Info: CMOS 73728-BIT MB81C79A-45-W STATIC RANDOM ACCESS MEMORY 72K-BIT 8192x9 HIGH SPEED CMOS STA TIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN Septem ber 1988 E d itio n 1.0 The Fujitsu MB81C79A-W is 8192 words x 9bits static random access memory fabricated with a CMOS process. The memory utilizes asynchronous circuitry

CT 2048

Abstract: D8228
Contextual Info: SN74ACT7203L, SN74ACT7204L, SN74ACT7205L, SN74ACT7206L 2048 x 9,4096 x 9,8192 x 9,16384 x9 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORIES SCAS226A - FEBRUARY 1993 - REVISED SEPTEMBER 1995 Reads and Writes Can Be Asynchronous or Coincident Organization: - SN74ACT7203L - 2048 x 9

14851

Abstract: CY7C4801 CY7C4811 CY7C4821 CY7C4831 CY7C4841 CY7C4851 IDT72801 IDT728X1 DA6116
Contextual Info: fax id: 5414 CY7C4801/4811/4821 CY7C4831 /4841 /4851 256/512/1 K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4801) • Double 512 x 9 (CY7C4811) • Double 1 K x 9 (CY7C4821)

7204A

Contextual Info: a Am7205A Advanced Micro Devices High Density First-In First-Out FIFO 8192 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • RAM based FIFO ■ Status flags—full, half-full, empty ■ 8192 x 9 organization ■ Cycle times of 25/35/45 ns for standard

TCB87-TypeC

Abstract: FSG AF9101 3055 l A1636 FROM192K CSTLS4M0053-B0 cstce15m0v53-r0 LC87F7DJ2B
Contextual Info: 注文コード No. N A 1 6 3 6 A 半導体データシート No.NA1636 をさしかえてください。 LC87F7DJ2B CMOS LSI FROM192K バイト，RAM8K バイト内蔵 8ビット1チップマイクロコンピュータ 概要 LC87F7DJ2Bは最小バスサイクル83.3nsで動作するCPU部を中心にして、192Kバイトのフラッシュ

Am7205A-35

Abstract: AM7205A AM7205 PDW028 Am7205A-15
Contextual Info: a Am7205A Advanced Micro Devices High Density First-In First-Out FIFO 8192 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ ■ ■ ■ RAM based FIFO 8192 x 9 organization Cycle times of 25/35/45 ns for standard products Asynchronous and simultaneous writes

7205

Abstract: 7204S st L35 S1638
Contextual Info: I H7E D INTEGRATE» DEVICE [IDT M62577Ì DQQRMSI - r - CMOS PARALLEL FIRST-iN/FIRST-OUT FIFO 2048 x 9-BIT, 4096 x 9-BIT, 8192 X 9-BIT & 16384 x 9-BIT « - a r IDT7203 IDT7204 IDT7205 IDT7206 FEATURES: DESCRIPTION: • First-In/First-Out dual-port memory • 2048 x 9 organization IDT7203

LC87F5cC8A

Abstract: LC874164A LC87F5CC lc877b80a lc876a64c LC87F7bC8A LC709004A LC877C64 LC875C00 LC876B
Contextual Info: マイクロコンピュータ 2010-04 機能別分類 三洋半導体マイクロコンピュータ 最新情報 USBマイコン USBバージョン1.1と2.0に準拠しUSB経由でのダウンロード、オンボードでのプログラム書 き換えが可能です。さらに、USB用レギュレータ、システムクロック用PLLの内蔵により、応用製

Contextual Info: fax id: 5414 CY7C4801/4811/4821 CY7C4831/4841/4851 CYPRESS 256/512/1K/2K/4K/8K x9 x2 Double Sync FIFOs Features • Double high speed, low power, first-in first-out FIFO memories • Double 256 x 9 (CY7C4S01) • Double 512 x 9 (CY7C4811) • Double 1K x 9 (CY7C4821)

Contextual Info: LH540205 FEATURES • Fast Access Times: 20/25/35/50 ns • Fast-Fall-Through Time Architecture Based on CMOS Dual-Port SRAM Technology • Input Port and Output Port Have Entirely Independent Timing • Expandable in Width and Depth • Full, Halt-Full, and Empty Status Rags

IDT720X

Abstract: 409S IDT7203 IDT7204 IDT7205 IDT7206 L120 409F
Contextual Info: M r ggl'x - wÉy O - O S O CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8 1 9 2 x 9 and 16384x9 Integrated Device Technology, Inc. IDT7203 IDT7204 IDT7205 IDT7206 FEATURES: DESCRIPTION: • • • • • • • The IDT7203/7204/7205/7206 are dual-port memory buff­

540205

Abstract: LH540205 LH540205D-25
Contextual Info: LH540205 FEATURES • Fast Access Times: 20/25/35/50 ns • Fast-Fall-Through Time Architecture Based on CMOS Dual-Port SRAM Technology • Input Port and Output Port Have Entirely Independent Timing • Expandable in Width and Depth • Full, Half-Full, and Empty Status Flags

a103 636 transistor

Abstract: MIPS32 cache LSI Rapidchip K9CFG CFG102 ARM926 ARM926EJ-S DB04-000094-02 Preliminary Gflx-r RapidChip Cell Technology Data infiniband PHY
Contextual Info: DATASHEET RapidChip Integrator Platform ASIC Family July 2004 Preliminary DB08-000237-02 This document is preliminary. As such, it contains data derived from functional simulations and performance estimates. LSI Logic has not verified either the functional descriptions, or the electrical and mechanical specifications using

Contextual Info: LH540205 FEATURES • Fast Access Times: 20/25/35/50 ns • Fast-Fall-Through Time Architecture Based on CMOS Dual-Port SRAM Technology • Input Port and Output Port Have Entirely Independent Timing • Expandable in Width and Depth • Full, Halt-Full, and Empty Status Flags

Contextual Info: March 1994 PRELIMINARY DATA SHEET_ L 67205 8K x 9 / 3.3 VOLTS CMOS PARALLEL FIFO FEATURES . . . . . . . . . ASYNCHRONOUS READ/WRITE OPERATIONS EMPTY, FULL AND HALF FLAGS IN SINGLE DEVICE MODE . RETRANSMIT CAPABILITY . BI-DIRECTIONAL APPLICATIONS

Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22