823 DIODE Search Results

DL306-XXXTG

Contextual Info: Closed Frame LED Sockets 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 • Email info@advintcorp.com • Internet http://www.advintcorp.com Closed Frame LED Light Emitting Diode Sockets .100 Typ.

Contextual Info: ADVANCED INTERCONNECTIONS Enhanced Hybrid Sockets 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 Tel. 401-823-5200 • FAX 401-823-8723 Enhanced Hybrid Sockets Features: • Designed and produced to meet your specific mechanical and electrical requirements.

DL318-XXXTG

Contextual Info: cat15 5/22/01 9:42 AM Page 89 Closed Frame LED Sockets 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 • Email info@advintcorp.com • Internet http://www.advintcorp.com Closed Frame LED Light Emitting Diode Sockets

DL308

Contextual Info: ADVANCED f '° secd *"»« INTERCONNECTIONS. 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA L t u » O C K e tS Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 • Email info@ advintcorp.com • Internet http://w ww .advintcorp.com Closed Frame LED Light Emitting Diode Sockets

Contextual Info: Custom Interconnect Solutions 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 • Email info@advintcorp.com • Internet http://www.advintcorp.com Custom Interconnect Solutions P.C. CAD Design Automated Solder Stencilling and Laser Inspection

Contextual Info: Open Frame LED Sockets ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1019, West Warw ick, Rl 02893 • Tel. 4 0 1 -823-5200 • FAX 401-823-8723 Open Frame LED Light Emitting Diode Sockets f o O O O O O O O ä rfB , 1_ 4 0 0 0 0 0 0 0 0 _ JIM <n?)

Contextual Info: B ADVANCED . INTERCONNECTIONS Custom Interconnect Solutions 5 Energy Way, P.O, Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 •Email advintcorp@aol.com ■Internet http://www.advintcorp.com C u s to m In te rc o n n e c t S o lu tio n s

JRF820

Abstract: F820R
Contextual Info: 2 3 H A R R IS IR F 820/ 821/ 822/823 IR F 820 R /8 2 1R /822 R /823 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package T O -2 2 0 A B TOP VIEW • 2 .2 and 2.5A , 4 5 0 V - 5 0 0 V • rD S ° n = 3.on and 4 .0 ÎÎ DRAIN

HVC383B

Abstract: DSA003644
Contextual Info: HVC383B Variable Capacitance Diode for VCO ADE-208-823 Z Rev. 0 Oct. 1999 Features • High capacitance ratio. (n =2. 0.min) • Low series resistance. (rs=0.5Ωmax) • Good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design.

Hitachi DSA002754

Abstract: F4 MARK
Contextual Info: HVC383B Variable Capacitance Diode for VCO ADE-208-823 Z Rev 0 Oct.1999 Features • • • • High capacitance ratio. (n =2. 0.min) Low series resistance. (rs=0.5Ωmax) Good C-V linearity. Ultra small Flat Package (UFP) is suitable for surface mount design.

ON 823

Abstract: 822 diode MOSFET 400V TO-220 LND820 rd1004 823 diode
Contextual Info: DATA SHEET LND820/821/822/823 POWER MOSFET GENERAL DESCRIPTION The LND820 series provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred

IRF820

Abstract: IRF822 irf821 IRF820.821 k 55 d 3j3 IRF820 SAMSUNG ON 823 IRF820..821 IRF420 IRF422
Contextual Info: ^SO IRF820/821/822/823 FEATURES GD17311 Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 7 cìb414E • •

C20 diode, TO

Abstract: 822 diode c20 diode 3108 DIODE ZC821 ZC823 Silicon Tuner ZC825 ZC826 ZC820
Contextual Info: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 – MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance pF 100 ABSOLUTE MAXIMUM RATINGS. 826 825 10 824 823 822 821 820 10 Reverse Voltage (Volts)

HVC383B

Contextual Info: HVC383B Variable Capacitance Diode for VCO REJ03G0092-0100Z Previous: ADE-208-823 Rev.1.00 Sep.17.2003 Features • High capacitance ratio. (n = 2.0 min) • Low series resistance. (rs = 0.5 Ω max) • Good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design.

Contextual Info: Am29821 /823/Ô25 Advanced Micro Devices High Performance Bus Interface Registers DISTINCTIVE CHARACTERISTICS • High-speed parallel registers with positive edge-triggered D-type flip-flops - Noninverting CP-Y tpD = 7.5 ns typ - Inverting CP-Y tPD = 7.5 ns typ

mb90f823a

Abstract: op07 MB90820 QFP-80 F2MC-16LX f823a MB90F822A
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13738-2E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90820 Series MB90822/823/F822A/F823A/V820 • DESCRIPTION The MB90820 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control

2567 cp

Abstract: phl 825
Contextual Info: IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS MILITARY AND INDUSTRIAL TEMPERATURE RANGES IDT54/74FCT821AT/BT/CT IDT54/74FCT823AT/BT/CT/DT IDT54/74FCT825AT/BT/CT HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS Integrated Device Technology, Inc.

Contextual Info: IDT54/74FCT821AT/BT/CT, 823/825AT/BT/CT/DT HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS MILITARY AND COMMERCIAL TEMPERATURE RANGES IDT54/74FCT821AT/BT/CT IDT54/74FCT823AT/BT/CT/DT IDT54/74FCT825AT/BT/CT HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS Integrated Device Technology, Inc.

AM29823

Abstract: AM29825 AM29821 Am298 AM29823/LMB
Contextual Info: Am29821 /823/Ô25 Advanced Micro Devices High Performance Bus Interface Registers DISTINCTIVE CHARACTERISTICS • High-speed parallel registers with positive edge-triggered D-type flip-flops ■ ■ - Noninverting CP-Y tpD = 7.5 ns typ - Inverting CP-Y tPD = 7.5 ns typ

Contextual Info: 823 03 National mm Semiconductor 54ACT/74ACT823 9-Bit D Flip-Flop General Description Features The 'ACT823 is a 9-bit buffered register. It features Clock Enable and Clear which are ideal for parity bus interfacing in high performance microprogramming systems. The

IRF820

Abstract: IRF820.821 IRF822
Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

samsung 822

Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7=^4142 001737^ bib I suste N-CHANNEL POWER MOSFETS IRFS820/821/822/823 FEATURES TO-220F • Lower R ds ON • Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance

AM29821

Abstract: amd am2 pin diagram AM29825 AM29823 tl 8211
Contextual Info: Am29821 /823/Ô25 Advanced Micro Devices High Performance Bus Interface Registers DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High-speed parallel registers with positive edge-triggered D-type flip-flops - Noninverting CP-Y tPD = 7.5 ns typ - Inverting CP-Y tPD = 7.5 ns typ

GR-1244-CORE

Abstract: GR1244-CORE ZL30101 ZL30101QDC ZL30101QDG1
Contextual Info: ZL30101 T1/E1 Stratum 3 System Synchronizer Data Sheet Features April 2010 • Supports Telcordia GR-1244-CORE Stratum 3 • Supports G.823 and G.824 for 2048 kbit/s and 1544 kbit/s interfaces Ordering Information ZL30101QDG1 64 Pin TQFP* Trays, Bake & Drypack