8244 INTEL Search Results

Intel 8245

Abstract: UJDA-110 Intel 8244 8244 INTEL
Contextual Info: About Founded in 1976 - Hi-Tech Contractors n Privately Held n – Los Angeles, San Mateo, Austin, Houston, Testing Division Started in 1982 n Oldest & Largest Test Lab n 1997 Sales $25 Million n Testing Related Sales $18 Million n Labs Offer Global Representation

lenze d-31855 manual

Abstract: lenze EMZ8201BB manual LENZE 9300 drive manual lenze inverter manual EVF8201-E lenze inverter manual EVF8202-E LENZE 8200 vector parameters lenze EVF8202-E manual LENZE 8200 parameter list emz8201bb D-31855
Contextual Info: 490 826 Lenze Global Drive Frequency inverters 8200/9300 vector 0.37 … 90 kW Lenze Drive Systems GmbH, Postfach 10 13 52, D-31763 Hameln Site: Hans-Lenze-Straße 1, D-31855 Aerzen, Tel. +49 0 5154 82-0, Fax +49 (0) 5154 82-21 11 E-mail: Lenze@Lenze.de • Internet: http://www.Lenze.com

Intel 8245

Abstract: 87S181 63S881 AM27S181 82HM181 TBP28S86 M7581 RAYTHEON ROM Bipolar ROM 1K X 4 Intel 8244
Contextual Info: 1 0 2 4 X 82H M 181 8 1 9 2 Bit 8 HMOS ROM GENERAL DESCRIPTION • • • • • • • • • The 82HM181 Is a high speed 8,192 b it read-only memory (ROM) organized 1024 words by 8 bits. The device is fabricated using In te rsil’s SELOX HMOS technology, a

BPV11F

Abstract: 035R
Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

BPV11

Abstract: phototransistor 600 nm
Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

BPV11F

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .

BPV11F

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .

BPV11

Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

ic 8253

Abstract: IC AN 8249 BPV11
Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation.

BPV11

Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation.

BPV11F

Abstract: National 8250
Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .

BPV11F

Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

BPV11

Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation.

Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

35734UL

Abstract: 46C2084 23R7008 23R6998 46X2684 23R7263 TS3200 46X2685 46X2683 45E3081
Contextual Info: IBM Systems and Technology Data Sheet System Storage IBM System Storage TS3200 Tape Library Express Model Entry-level LTO tape library designed to provide reliable, high-capacity, high-performance tape backup ● Designed to support the newest generation of LTO with up to two

Contextual Info: BPV11F www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times

Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

nec D 8243 C

Abstract: PS2581L1 PS2581L2 PS2581L2-E3 PS2581L2-E4 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP Dual In-line Package .

PS2581L1

Abstract: PS2581L2 PS2581L2-E3 PS2581L2-E4 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4-PIN PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP Dual In-line Package .

v945

Abstract: V943 272850 270929-003 80960SA 80960SB N80960SA N80960SB S80960SA S80960SB
Contextual Info: 80960SA/SB SPECIFICATION UPDATE Release Date: July, 1996 Order Number: 272850-001 The 80960SA/SB may contain design defects or errors known as errata. Characterized errata that may cause the 80960SA/SB’s behavior to deviate from published specifications are

8080 intel databook

Abstract: ARCHITECTURE OF 80286 Klamath working of 80286 82440FX Intel Pentium D 925
Contextual Info: E AP-827 APPLICATION NOTE 100 MHz GTL+ Layout Guidelines for the Pentium II Processor and Intel 440BX AGPset Order Number: 243735-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or

nec pc 2581 v

Abstract: nec pc 2581 NEC 2581 pc 2581 v
Contextual Info: DATA SHEET PHOTOCOUPLER PS2581L1,PS2581L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE −NEPOC 4-PIN PHOTOCOUPLER Series− DESCRIPTION The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP Dual In-line Package .