8320EV18 Search Results

GS8320E18T-133

Abstract: GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225
Contextual Info: Preliminary GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address

GS8320EV18

Abstract: GS8320EV18T-150 GS8320EV18T-166 GS8320EV18T-200 GS8320EV18T-225 GS8320EV32 GS8320EV36
Contextual Info: Preliminary 8320EV18/32/36T-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O interleave order with the Linear Burst Order LBO input. The

Contextual Info: Product Preview 8320EV18/32/36T-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation

GS8320EV18

Abstract: GS8320EV18T-150 GS8320EV18T-166 GS8320EV18T-200 GS8320EV18T-225 GS8320EV32 GS8320EV36
Contextual Info: Product Preview 8320EV18/32/36T-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation

Contextual Info: Preliminary GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address

Contextual Info: GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address

Contextual Info: GS8320E18/32/36T-xxxV 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features Functional Description ct DCD Pipelined Reads The GS8320E18/32/36T-xxxV is a DCD Dual Cycle

GS8320E18T-133

Abstract: GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225
Contextual Info: GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address