83C ZENER Search Results

bzx 550 4v7

Abstract: BZX 5V6 bzx 550 7v5 83C5V1 BZX 150 bzx 4v3 bzx 2v7 bzx c5v1 zener BZX 4v7 bzx 8v2
Contextual Info: y zener diodes diodes zener THOMSON-CSF Types VZT / IZT* min max V 500 m W 'ZT/'ZT* •ZT* max CÎ) (mAI rzK / IZK max 62) ImA) / T a m b = 2 5 ° C T j m a x = 1 7 5 °C BZX 83-C 2V4 BZX 83-C 2V7 BZX 83-C 3V0 BZX 83-C 3V3 BZX 83-C 3V6 BZX 83-C 3V9 BZX 83-C 4V3

zener BZX 3V6

Abstract: zener BZX 4v7 zener BZX 3V3 83c zener zener BZX 27 83c 5v1 zener BZX 83c 4v7 zener 83c bzx series zener BZX 2.7
Contextual Info: BZX83C Series SILICON EPITAXIAL PLANAR ZENER DIODES The Zener voltages are graded according to the international E 24 standard. Other tolerances and higher Zener voltages are upon request. Features: High reliability Applications: Voltage stabilization Absolute Maximum Ratings Ta = 25℃

Zener diode 83C 12

Abstract: diode zener 6V8 BZX C 55 8ZX83C BZX marking diode diode zener BZX 70 C 10 Zener diode 83C 24 bzx 85 zener zener diode b2x BZX83C diode zener 6V8 BZX C 83
Contextual Info: S G S— THOMSON _ SIC D £ O THOMSON-CSF DIV IS IO N S EM IC O N DUCTE UR S Q0Q247M 7 BZX83C2V4 — BZX83C75 - • ZENER DIODES 5 9C 0 2 4 7 4 D T ~ D ' I f D IO D E S Z E N E R P tot = 600 m W 500 mW hermetically sealed glass silicon Zener diodes offering the following advantages :

Contextual Info: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature

BZX83C

Abstract: Zener diode 83C 12 BZX83-C Series Zener diode 83C 24 BZ DO-35 ZENER bzx83c 3v3 bzx8
Contextual Info: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol Value

BZX83B

Abstract: BZX83C bzx 550 4v7 Zener diode 83C 24
Contextual Info: BZX83C Series Zener diode Features High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 175 ℃ Tstg -65~+175 ℃ Symbol

germanium

Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Contextual Info: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014

IC 7107

Abstract: IC 7106 thermometer circuit using 7107
Contextual Info: ICL7106/ICL7107 H A R R IS S E M I C O N D U C T O R 31/i-D ig it LCD/LED Single-Chip A/D Converter GENERAL DESCRIPTION FEATURES The Harris ICL7106 and 7107 are high performance, low power 3%-digit A/D converters containing all the necessary active devices on a single CMOS I.C. Included are sevensegment decoders, display drivers, a reference, and a

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

Contextual Info: ANALOG DEVICES □ FEATURES Single Chip Construction V ery High-Speed Settling to 1/2LSB A D 5 6 5 A : 250ns max A D 5 6 6 A : 350ns max Full-Scale Switching Time: 30ns Guaranteed for Operation with ± 1 2 V Supplies: A D 5 6 5 A with - 1 2 V Supply: A D 5 6 6 A

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

dallas ds80c320 high speed micro guide

Abstract: transistor bf 175 DS1640
Contextual Info: TABLE OF CONTENTS Short-Form Catalog T im e kee pin g . 1 M emory P ro d u

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

dallas ds80c320 high speed micro guide

Abstract: DS1640
Contextual Info: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest