851 MOTOROLA Search Results

Contextual Info: AURORA, IL. 60505 CONNOR—WINFIELD CORPORATION H C 4 9 /U CRYSTAL UNIT PHONE 630 851-472 2 FAX (630) 851 -5 0 4 0 FOR MOTOROLA M C145572 ISDN U-INTERFACE TRANSCEIVER SPECIFICATIONS Frequency Frequency Tolerance (at 25'C) Temperature Stability Operating Temperature Range

Contextual Info: CONNOR—WINFIELD CORPORATION H C 4 9 /U CRYSTAL UNIT AURORA, IL. 60505 PHONE 630 851-472 2 FAX (630) 851 -5 0 4 0 FOR MOTOROLA MC145572 ISDN U—INTERFACE TRANSCEIVER LT MODE SPECIFICATIONS Frequency Frequency Tolerance (at 25'C) Temperature Stability Operating Temperature Range

hc49

Abstract: CW49-1G CW49-2G MC145572 491g
Contextual Info: THE CONNOR-WINFIELD CORP. 2111 COMPREHENSIVE DRIVE. AURORA, IL 60505. FAX 630 851-5040. PHONE (630) 851-4722. WWW.CONWIN.COM PRODUCT D AT A SHEET CRYSTAL HC-49/u CRYSTAL UNIT Designed for use with Motorola MC145572 ISDN U-Interface Transceiver ABSOLU TE MAX IMUM RATING S

tm028

Abstract: QTH-030-03-H-D-A QSH-030-01-H-D-A ACS8510 GR-1244-CORE GR-253-CORE STS-101 Intel Core i3
Contextual Info: STS-101 Synchronous Timing Module 2111 Comprehensive Drive Aurora, Illinois 60505 Phone: 630- 851- 4722 Fax: 630- 851- 5040 www.conwin.com Features • Suitable for Stratum 3 and 4 SONET or SDH Equipment Clocks SEC applications • Supports six TTL/CMOS inputs and two BITS

stc5420 pr

Abstract: New STC5420 Series
Contextual Info: NEWS RELEASE The Connor-Winfield Corporation 2111 Comprehensive Drive Aurora, Illinois 60505 Phone: 630- 851- 4722 | Fax: 630- 851- 5040 For Immediate Release Contact: November, 2010 Ray Kepka 630.851.4722, x 4224 Connor-Winfield Announces New STC5420 Series of Timing Chips for SDH/

TM026

Abstract: LVDS connector 26 pin P0210 QSH-030-01-H-D-A intel i5 ACS8530 GR-1244-CORE GR-253-CORE STS-100 QSH-030-01-H-D-A-K-TR
Contextual Info: STS-100 Synchronous Timing Module 2111 Comprehensive Drive Aurora, Illinois 60505 Phone: 630- 851- 4722 Fax: 630- 851- 5040 www.conwin.com Features • Suitable for Stratum 3 and 4 SONET or SDH Equipment Clocks SEC applications • Supports 14 individual inputs (LVDS, LVPECL, TTL) at Nx8 kHz multiples

samtec connector QTH

Abstract: TM026 LVDS connector 26 pins
Contextual Info: STS-100 Synchronous Timing Module 2111 Comprehensive Drive Aurora, Illinois 60505 Phone: 630- 851- 4722 Fax: 630- 851- 5040 www.conwin.com Features • Suitable for Stratum 3 and 4 SONET or SDH Equipment Clocks SEC applications • Supports 14 individual inputs (LVDS, LVPECL, TTL) at Nx8 kHz multiples

Contextual Info: STS-100 Synchronous Timing Module 2111 Comprehensive Drive Aurora, Illinois 60505 Phone: 630- 851- 4722 Fax: 630- 851- 5040 www.conwin.com Features • Suitable for Stratum 3 and 4 SONET or SDH Equipment Clocks SEC applications • Supports 14 individual inputs (LVDS, LVPECL, TTL) at Nx8 kHz multiples up

Uniden Electronics Products

Abstract: NovAtel lexus blaupunkt Times Microwave
Contextual Info: TO ORDER FROM ANTENEX WORLDWIDE: PHONE: 630-351-9007 800-323-3757 USA ONLY FAX: 630-351-9009 800-851-9009 (USA ONLY) ON-LINE: EMAIL: MAIL: PAYMENT ADDRESS: http://www.antenex.com sales@antenex.com 2000-205 Bloomingdale Road Glendale Heights, IL 60139 U.S.A.

blaupunkt

Abstract: Times Microwave Uniden Electronics Products
Contextual Info: TO ORDER FROM A N T E N E X WORLDWIDE: PHONE: 630-351-9007 800-323-3757 USA ONLY FAX: 630-351-9009 800-851-9009 (USA ONLY) ON-LINE: EMAIL: MAIL: PAYMENT ADDRESS: http://www.antenex.com safes @antenex. com 2000-205 Bloom ingdale Road Glendale Heights. IL 60139 U.S.A.

MA1002 digital LED Clock Module

Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
Contextual Info: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH

MHW851-4

Abstract: MHW851-1 MHW851 MHW851-2 motorola MHW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M H W 85 1 -1 M H W 8 5 1 -2 M H W 8 5 1 -3 M H W 851 -4 U H F P o w e r A m p lifie rs . . . ca p a b le o f w id e p o w e r ra ng e c o n tro l as e n c o u n te re d in p o rta b le c e llu la r ra dio a p p lic a tio n s 30 d B typ ical .

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW801 MHW851 Series The RF Line UHF Power Amplifiers . . . capable of w ide power range control as encountered in portable cellular radio applications 30 dB typical . | • • • • • • • High Efficiency Smallest Size in Industry

IRF 810

Abstract: IRF 3008 IRF 324 irf 839 IRF 544 lm741cn irf 855 Motorola 022 6934 irf 405 motorola mc14011bcp
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company DLS EPC FSC GIS IRF INT Dallas Semiconductor Epcos Fairchild Semiconductor

bfl 177

Contextual Info: MOTOROLA SC XSTRS/R F bSE » • b3b72S4 DG^fl404 flflb ■ MOTOROLA ■ SE M IC O N D U C T O R TECHNICAL DATA P o w e r Field E ffe c t T ra n sisto r IRF130 N-Channel Enhancement-Mode Silicon Gate This T M O S Power FET is designed for low voltage, high speed power switching applications

Motorola transistor 388 TO-204AA

Contextual Info: MOTOROLA SC X S T R S / R F bBF T> b3b?2SM □ □ ' l a m a I MOTb 3?o MOTOROLA • I SEM ICO NDUCTO R TECHNICAL DATA IRF350 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number Voss IRF350 400 V This TMOS Power FET is designed for high voltage, high speed

Tektronix 464

Abstract: A-18 MSP430 tektronix 454 LNK370 cl370 tektronix 463
Contextual Info: MSP430 Family Index A A_DIR assembler 8-12, 8-13 A_DIR assembler 3-7, 3-8 abbreviations and symbols 5-4 absolute lister 9-3 creating the absolute listing file 3-5 examples 9-6 invoking 9-5 absolute output module 8-10 addressing modes 5-5 alignment 4-13, 4-20, 8-28

Contextual Info: MOTOROLA SC XSTRS/R b3b?254 D F □ □ ‘ìflHEG TST inOTb MOTOROLA • SEM ICONDUCTOR ■ TECHNICAL DATA Part Number VDSS RDS(on) >d IRF440 500 V 0.85 n 8.0 A N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed

92 0151

Abstract: MTM15N20
Contextual Info: MOTOROLA SC XSTRS/R F bflE D • b3b?254 DDIfimD OfiT ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA IRF230 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate Y T h is T M O S P o w e r FET is d e s ig n e d f o r lo w

Motorola transistor 388 TO-204AA

Abstract: motorola mosfet BD357 Bd 357
Contextual Info: nOTOROLA SC XSTRS/R F bftE J> b3t.72SH 00^0^03 7G1 •110Tb m MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM25IM10 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate TM O S POWER FET 25 AMPERES R 0S (0n) = 0 075 O H M

bfl 177

Abstract: IR 92 0151 motorola 600 ssd MTP2N50 mosfet ssd
Contextual Info: MOTOROLA SC M O TO R O LA XSTRS/R F bfl E ]> • fc>3b72S4 ÜO' îflSM? 052 ■MOTf c. ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2 AMPERES RDS(on) = 4 OHMS

60N06

Abstract: motorola mosfet
Contextual Info: MOTOROLA SC XSTRS/R F bf l E T> b 3 b 7 ES4 DOTflbn M O TO R O LA •I SEMICONDUCTOR MTM55N10 MTM60N06 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 55 and 60 A M P E R E N-CHANNEL T M O S POWER FETs N - C H A N N E L E N H A N C E M E N T - M O D E S IL IC O N G A T E

2N10E

Abstract: MTM12N10
Contextual Info: MOTOROLA SC XSTRS/R F bfl E J> m b3b72S4 0 0 T ÔS 7 Û 72b » n O T b MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M T P 1 2N 10 E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T h e se T M O S Pow er F ET s are d e sign e d for m ed iu m voltage,

Contextual Info: MOTOROLA I SEMICONDUCTOR BUS50 TECHNICAL DATA 70 AMPERES NPN SIUCON POWER TRANSISTOR SWITCHMODE SERIES NPN SIUCON POWER TRANSISTORS 125 VO LTS BVCEO 350 W ATTS 200 V (BVCES) The B U S 5 0 transistor is designed for low voltage, high-speed, pow er sw itching in inductive circuits where fall time is critical. It is particularly