8642ZXX Search Results
8642ZXX Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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GS8642Z72GC-167
Abstract: GS8642Z36
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Original |
GS8642Z18 /GS8642Z36 /GS8642Z72 209-Bump 8642Zxx GS8642Z72GC-167 GS8642Z36 | |
GS8642Z18
Abstract: GS8642Z18B GS8642Z72
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Original |
GS8642Z18 /GS8642Z36 /GS8642Z72 209-Pin 8642Zxx GS8642Z18B GS8642Z72 | |
Contextual Info: Preliminary GS8642Z18/36/72 B/C -xxxV 119- & 209-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with |
Original |
GS8642Z18/36/72 209-Bump 8642ZVxx 8642Zxx | |
GS8642Z36GB-300
Abstract: GS8642Z36GB-200I GS8642Z18 GS8642Z18B GS8642Z72 GS864
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Original |
GS8642Z18 /GS8642Z36 /GS8642Z72 209-Bump 8642Zxx GS8642Z36GB-300 GS8642Z36GB-200I GS8642Z18B GS8642Z72 GS864 | |
Contextual Info: GS8642Z18/36/72 B/C -xxxV 119- & 209-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with |
Original |
GS8642Z18/36/72 209-Bump de642ZVxx 8642ZVxx 8642Zxx | |
GS8642Z72C-250V
Abstract: GS8642Z36B-167IV
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Original |
GS8642Z18/36/72 209-Bump 8642ZVxx 8642Zxx GS8642Z72C-250V GS8642Z36B-167IV | |
GS8642Z18
Abstract: GS8642Z18B GS8642Z72
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Original |
GS8642Z18 /GS8642Z36 /GS8642Z72 209-Bump of005 8642Zxx GS8642Z18B GS8642Z72 | |
Contextual Info: GS8642Z18/36B-250M GS8642Z72C-250M 119- & 209-Bump BGA Military Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the |
Original |
GS8642Z18/36B-250M GS8642Z72C-250M 209-Bump 8642Zxx-250M | |
Contextual Info: GS8642Z18/36B-250M GS8642Z72C-250M 119- & 209-Bump BGA Military Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the |
Original |
GS8642Z18/36B-250M GS8642Z72C-250M 209-Bump 8642Zxx-250M | |
Contextual Info: GS8642Z18 B /GS8642Z36(B)/GS8642Z72(C) 119- & 209-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and |
Original |
GS8642Z18 /GS8642Z36 /GS8642Z72 209-Bump 8642Zxx | |
Contextual Info: Preliminary GS8642Z18/36/72 B/C -xxxV 119- & 209-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with |
Original |
GS8642Z18/36/72 209-Bump 8642ZVxx | |
GS8642Z18
Abstract: GS8642Z18B GS8642Z72
|
Original |
GS8642Z18 /GS8642Z36 /GS8642Z72 209-Bump 8642Zxx GS8642Z18B GS8642Z72 |