87.5-108 MHZ W POWER Search Results

1000w radio amplifier

Abstract: FM power amplifier 1000W 1000w power amplifier fm amplifier 100w SOCKET HEAD CAP SCREWS FM1K-108 amplifier 1000w 11Pin
Contextual Info: FM1K-108 PRELIMINARY 1000 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and LDMOS device to enhance ruggedness and reliability. • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω

BLF278 equivalent

Abstract: an power amplifier 108 mhz blf278 108 amplifier FM301-108 BLF278 power amplifier blf278 300w amplifier 300w fm amplifier SOCKET HEAD CAP SCREWS application MOSFET transmitters fm
Contextual Info: FM301-108 PRELIMINARY 300 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω

Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

SD2942

Abstract: sd2942 module "RF Power Amplifier" 2L TRANSISTOR CuMoCu Ni100 sd2942 108 NI 100 m177
Contextual Info: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.

"RF Power Amplifier"

Abstract: 2L TRANSISTOR Ni100 SD2932
Contextual Info: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.

RF POWER Mosfet SD2932

Abstract: GR00239 B57045K0103K000 ntc k45 EPCOS ntc k45 ntc 10 epcos SD2932 RES Ingenium
Contextual Info: GR00239 1000 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω

MRF151G

Abstract: FM300 FM300-108M FM300-108 300w amplifier mrf151g date application MOSFET transmitters fm 300w fm amplifier mrf151g 300 SOCKET HEAD CAP SCREWS
Contextual Info: FM300-108M 300 W - FM Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability. • • • • • • 87.5 ÷ 108 MHz 48 Volts Input/Output 50 Ω

MDL-30-R

Abstract: CLASS AB MOSFET RF amplifier Richardson Electronics BLF245 RF MOSFET CLASS AB
Contextual Info: MDL30-R 30W - RF AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. • • • • • 87.5 ÷ 108 MHz 28 Volts Input / Output 50 Ω - 50 Ω Pout : 30 W

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

BLW95

Abstract: TV power transistor datasheet BFQ68 Applications microwave rf transmitter RF Power Modules BLW50F blv862 bfg91a data sheet for BLF147 blf278 rf power
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF & Microwave Power Transistors and RF Power Modules File under Discrete Semiconductors, SC19 1998 Feb 05 Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Line-ups SSB TRANSMITTERS 1.5 to 30 MHz

EWC-050S119SS

Abstract: EWC-050S210SS EWC-050S300SS EWC-050S277SS
Contextual Info: LED Driver Green Power for Green Products EWC-050SxxxSS 20090724 A Features • High Efficiency Up to 88% • Active Power Factor Correction (Typical 0.87) • Constant Output Current • Waterproof (IP67) • All-Round Protection: OVP, SCP, OTP • Comply With UL8750 & EN61347 Safety Regulations

TDK Ferrite Balun

Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

Philips 4312 020

Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
Contextual Info: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network

mrfe6vp61k25h

Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

COIL SIF

Abstract: NTE1861 NTE186
Contextual Info: NTE1861 Integrated Circuit TV Video IF Processor Features: D PLL True Synchronous Detector Incorporates VCO D Quadrature Sound FM Detector D AGC Defeat Terminal Pin 20 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.8V

cdm12.1

Abstract: lcd tv Philips 32 power supply diagram SAA3010T AUTO RADIO TAPE PLAYER cd loader L1210 ic HEF4052 TDA2515 L1210 TUNING FM RADIO RECEIVER TEA5757H
Contextual Info: 34 .807IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of NXP have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - Philips Semiconductors is replaced with ST-NXP Wireless.

ci 4518

Abstract: 4518 data sheet 4518 datasheet
Contextual Info: PKJ 4518 PIT/PKJ 4318 PIT/PKJ 4218 PIT Advanced Specification 15-30A DC/DC Power Modules 48V Input, 1.8V Output • • • • • • • High efficiency 87.5% Typ 15A at full load Industry standard footprint Max case temperature +100ºC Wide input voltage range according

MDF-30

Abstract: MDF30 "RF Power Amplifier" MDF30-R 54ALS03 class-A amplifier BLF245 transposers BLF245 equivalent
Contextual Info: MDF30-R 30W - RF POWER AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. • • • • • • 87.5 ÷ 108 MHz 28 Volts Input/Output 50 Ω - 50 Ω

SD2942

Abstract: PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E
Contextual Info: Radio frequency technologies for innovative solutions Selection guide December 2009 www.st.com/rf DMOS ISM & FM broadcast applications Part number Frequency MHz Pout (W) VDD (V) Gain (dB) Efficiency (%) Package SD2900 400 5 28 13.5 45 M113 SD2902 400 15

ESL010SA

Abstract: GaAs FET sot89 812 SOT89
Contextual Info: ＥＳＬ010ＳＡ 0.1W ＳＯＴ89 Molded Package FET FEATURES ・Up to 4GHz Frequency Band ・0.1W Output Power ・SOT-89 SMT Package ・Die Attached with AuSn preforms ・RoHs Compliant DESCRIPTION The ESL010SA is a high performance GaAs MESFET housed in a low-cost SOT-89 molded package.

cda4.5mc20

Abstract: d4040 5MC20
Contextual Info: O K I semiconductor MSA170GS - K LOW - POWER IF PROCESSOR FOR TELEVISION SETS OUTLINE The M SA 1 7 0 G S -K is a lo w -p o w e r IF processor developed for television sets. The required current is 9 m A and the m inim um op eratin g pow er su p p ly vo lta g e is 3.5 V, m akin g the

Contextual Info: Cable Materials Company Hulic Asakusabashi Building, 22-16, Asakusabashi 1-chome, Taito-ku, Tokyo 111-0053, Japan Tel: +81-3-3863-2370 Hitachi Metals Europe GmbH Hitachi Metals Thailand Ltd. Head Office Bangkok Sales Office Immermannstrasse 14-16, 40210 Dusseldorf, Germany

LG 631 TV LG

Abstract: 5N5OUT Tv tuner Diagram LG RF tuner LG lg innotek tuner LG 631 IC fm radio pcb LG Innotek tv lg LG 631
Contextual Info: LG Innotek Multi Media Tuner NTSC M/N JPN & FM Radio 2004/03/08 Preliminary specification TAPE-H091F 1 LG Innotek Preliminary specification Multi Media Tuner NTSC M/N(JPN) & FM Radio TAPE-H091F FEATURES Systems NTSC M/N(JPN) & FM Radio Stereo True 5V device (low power dissipation)