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    BLV10 Price and Stock

    Festo QBLV-10-32-UNF-1-4-U

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    DigiKey QBLV-10-32-UNF-1-4-U Bulk 10
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    Festo QBLV-10-32-UNF-3-16-U

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    Festo QBLV-10-32-UNF-5-32-U

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    Advanced Semiconductor Inc BLV10

    RF Bipolar Transistors RF Transistor
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    Mouser Electronics BLV10
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    Festo QBLV-10-32-UNF-1/4-U (ALTERNATE: 564730)

    Fitting, L, rotary, PBT/nkl pl brass, air, 10-32UNF male, for 1/4" tubing | Festo QBLV-10-32-UNF-1/4-U
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    RS QBLV-10-32-UNF-1/4-U (ALTERNATE: 564730) Bulk 10
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    BLV10 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLV10 Philips Semiconductors VHF power transistor Original PDF
    BLV10 Philips Semiconductors VHF power transistor Original PDF
    BLV10 Philips Semiconductors VHF Power Transistor Original PDF
    BLV10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BLV10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BLV10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BLV10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BLV10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BLV10 Philips Semiconductors VHF power transistor Scan PDF
    BLV100 Philips Semiconductors UHF Power Transistor Original PDF
    BLV100 Philips Semiconductors UHF Power Transistor Original PDF
    BLV100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BLV101A Philips Semiconductors UHF Power Transistor Original PDF
    BLV101A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BLV101B Philips Semiconductors UHF Power Transistor Original PDF
    BLV101B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BLV103 Philips Semiconductors UHF Power Transistor Original PDF
    BLV103 Philips Semiconductors UHF Power Transistor Original PDF
    BLV103 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BLV108 Shanghai Belling BLV108 Original PDF

    BLV10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLV108

    Abstract: MOSFET
    Text: BLV108 N 沟纵向 MOSFET 描述: 描述: N 沟增强型 VDMOS，高速开关，无二次击穿 产品应用： 电话机电路 继电器电路 驱动电路等 工作条件 T=25℃ (T=25℃ 符号 参数 极限值 单位 VDSS 漏源电压 200 V VGSS 栅源电压


    Original     		PDF BLV108 100mA 25VVGS 250mA BLV108 MOSFET

    MRA359

    Abstract: MDA536 BLV103 MRA364
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for


    Original     		PDF BLV103 MRA359 MDA536 BLV103 MRA364

    BLV10

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and


    Original     		PDF BLV10 BLV10

    SOT123 Package

    Abstract: MGP255 BLV10 MGP250
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLV10 SC08a SOT123 Package MGP255 BLV10 MGP250

    mda540

    Abstract: BLV100
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum


    Original     		PDF BLV100 OT171 mda540 BLV100

    tp2304

    Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
    Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12


    Original     		PDF AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit

    MRF648

    Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
    Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC


    Original     		PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent

    2SC636

    Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
    Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642


    Original     		PDF 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC636 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470

    PCA1318P

    Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
    Text: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product


    Original     		PDF DN-42 REPLACec-99 30-Jun-00 PCA1318P philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112

    transistor A968

    Abstract: a968 BLV101B JBC223 capacitor philips ll BLV101A 2222-581 L1-L10 philips e3 Philips MBB
    Text: Philips Semiconductors M 00 ^ 3 106 PHILIPS INTERNATIONAL bSE D UHF power transistors FE A T U R E S • High input and output im pedances prom ote easy m atching BLV101A/BLV101B Q U IC K R E F E R E N C E DATA R F perform ance at T h = 2 5 °C in a com m on em itter test circuit. M o d e of


    OCR Scan     		PDF 3b310fi BLV101A/BLV101B OT273 OT273 BLV101B MCA973 BLV101B KCA97Ã transistor A968 a968 JBC223 capacitor philips ll BLV101A 2222-581 L1-L10 philips e3 Philips MBB

    71009 SB

    Abstract: BLV100 71108Sb 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: . Philips Semiconductors • 7110asb DOtaBlDQ T71 ■ I P H I N 1 •*J PHILIPS INTERNATIONAL UHF power transistor _ . , . Product specification bSE D BLV100 PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an


    OCR Scan     		PDF 71108Sb BLV100 OT171 -SOT171 CA91E 71009 SB BLV100 35 W 960 MHz RF POWER TRANSISTOR NPN

    transistor 603 47e

    Abstract: BTB 600 BR BLV103 71009 SB
    Text: Philips Semiconductors 7110f l 5b D Q b B ll^ T 4fl ^ B P H IN Product specification UHF power transistor BLV103 bS E T> PHILIPS INTERNATIONAL FEATU RES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for


    OCR Scan     		PDF 71IDA5b 00b31I^ BLV103 OT171 MSA45Ã MRA360 transistor 603 47e BTB 600 BR BLV103 71009 SB

    BLV100

    Abstract: itt 2222 ITT 232-2 ITT 2222 npn ITT 2222 A
    Text: Philips Sem iconductors bbS3*ì31 □□ET2D3 bdfi * APX BLV100 UHF power transistor •N AMER PHILIPS/DISCRETE b'ìE D PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile


    OCR Scan     		PDF BLV100 OT171 -SOT171 MBB012 MBA931-1 BLV100 itt 2222 ITT 232-2 ITT 2222 npn ITT 2222 A

    transistor wm

    Abstract: OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760
    Text: PHILIPS INTERNATIONAL bSE D • 711Dö2b □ D b 5 7 clö T7S J IPHIN BLV10 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF Db57clà BLV10 76-j16 7Z78515 transistor wm OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760

    Untitled

    Abstract: No abstract text available
    Text: N AMER PH IL IPS /DISCR ETE b b S a ^ l OOEfi^Ql 2m BLV10 b^E » IAPX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in ciass-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF BLV10

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bb53R31 002T2Q3 bOfi Apy Product specification BLV100 UHF power transistor N AUER PHILIPS/DISCRETE b'lE D PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile


    OCR Scan     		PDF bb53R31 002T2Q3 BLV100 OT171 OT171 MCA923 MCA910

    BLV103

    Abstract: MRA363
    Text: bb53131 Philips Semiconductors DOSASSE 5 bT M i APX Produc^pecification BLV103 UHF power transistor N AMER P H I L I P S / D I S C R E T E b'ìE D QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. FEATURES • Internal matching for an optimum


    OCR Scan     		PDF BLV103 OT171 OT171 MRA363 BLV103 MRA363

    BLV101B

    Abstract: mca97 BLV101A Tekelec TE 10 75 TEKELEC te 360 Philips 2222-030 Philips 2222-581 101B L817
    Text: Philips Semiconductors bbSBTBl G G E IS ll 70*4 APX Product specification BLV101A/BLV101B UHF power transistors 'N AI1ER P H I L I P S / D I S C R E T E FEATURES • High input and output impedances promote easy matching • Implanted ballast resistors for


    OCR Scan     		PDF OT273 OT273 BLV101A/BLV101B BLV101B WCW71 MCA973 mca97 BLV101A Tekelec TE 10 75 TEKELEC te 360 Philips 2222-030 Philips 2222-581 101B L817

    BLV10

    Abstract: RF POWER TRANSISTOR NPN vhf
    Text: N AMER PHILIPS/DISCRETE bRE D • bb53^3L OOEB'iOl E m IAPX BLV10 V.H.F. POWER TRANSISTOR N-P-N silico n planar e p ita xia l tra n sisto r intended fo r use in ciass-A, B and C operated m ob ile, h .f. and v.h.f. tran sm itte rs w ith a nom inal supply voltage o f 13,5 V . T he tran sisto r is resistance stabilized and


    OCR Scan     		PDF BLV10 76-j16 7Z78515 BLV10 RF POWER TRANSISTOR NPN vhf

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    BLY93A

    Abstract: blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88
    Text: 60 RF/Microwave Devices Bipolar RF Transmitting Transistors VHF 25175M H z Package Outline Type No. Load Power W @ 175MHz Power Gain (dB) @ 175MHz Supply Voltage (V) 0.7 1.5 3 9 8 8.4 9.4 7.4 7.5 7.5 7.5 7.5 1 2 2 4 4 4 4 8 8 8 10 15 15 15 15 25 25 28 30


    OCR Scan     		PDF 25175M 175MHz 2N4427 BFQ42 BFQ43 BLW29 OT-120, BLY93A blw79 SOT123 Package BLW80 BLV11 BFS22A BLY94 BLY93C bly88

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    T119 A

    Abstract: sot 122 SOT123 Package BLW78
    Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain


    OCR Scan     		PDF 4-26V BLV97CE BLV101A BLV101B BLV948 OT-171, OT-273, OT-262A2, 2N3866 T119 A sot 122 SOT123 Package BLW78

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b b 5 3 ^ 3 1 0 Q2 T 211 7 fl 4 M A P X Product specification B L V 1 0 1 A /B L V 1 0 1 B U H F p o w e r tr a n s is to r s N AUER PHILIPS/DISCRETE FEATURES b'lE D QUICK REFERENCE DATA • High input and output impedances promote easy


    OCR Scan     		PDF BLV101B BLV101A BLV101A/BLV101B BLV101B. MCA974 8A451