870MHZ Search Results

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

S8740340PT

Contextual Info: S8740340PT S8740340PT 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740340PT is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides

M68745L

Contextual Info: MITSUBISHI RF POWER MODULE M68745L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 45 2 3 42 2-R1.5 1 4 5 5 18 5 8.5 36.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY

D8740320GTH

Contextual Info: Product Specification D8740320GTH GaAs Power Doubler, 40 – 870MHz, 32.0dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC FEATURES • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability

RD07MUS2B

Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V

GRM1882C1H100JA01D

Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V

C213

Abstract: C6006 CX6006 CX6006L 83RF
Contextual Info: DIPLEXERS FOR HFC EQUIPMENT AND CABLE MODEMS For International Applications Ideal for HFC equipment, cable modem and set top box equipment Improved performance Small surface mount component Y 65/85MHz frequency splits AR 5 - 870MHz range Electrical Specifications @ 25°C — Operating Temperature -40°C to +85°C

C213A

Abstract: 1055 C213 CX6006 CX6006L
Contextual Info: DIPLEXERS FOR HFC EQUIPMENT AND CABLE MODEMS For International Applications Ideal for HFC equipment, cable modem and set top box equipment Improved performance Small surface mount component 65/85MHz frequency splits1 5 - 870MHz range Electrical Specifications @ 25°C — Operating Temperature -40°C to +85°C

Contextual Info: D8740300GTH D8740300GTH GaAs Power Doubler Hybrid 40MHz to 870MHz Package: SOT-115J The D8740300GTH is a Hybrid Power Doubler amplifier module with high output capability. The D8740300GTH employs GaAs dice and is operated from 40MHz to 870MHz. The part provides excellent linearity and superior return loss

Contextual Info: PI3LVD412 3.3V, 4-differential channel LVDS switch targeted for 18bit displays Features Description • Designed specifically to switch LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 870MHz typ • Low Xtalk, (-28dB typ)

SM-118A

Abstract: ET1-1-75-3 MABA-008184-CT17TB M513 MABA-008184-CT1760 CURRENT TRANSFORMER PCB MOUNT PCB MOUNT CURRENT TRANSFORMER SM-118-A
Contextual Info: RoHS Compliant 1:1 Transformer with tap 50-870MHz MABA-008184-CT1760 V1 Features • • • • • • Schematic Surface Mount 1:1 Impedance 260°C Reflow Compatible RoHS* Compliant RoHS version of ET1-1-75-3 Available on Tape and Reel. Reel quantity 900

Contextual Info: D8740250GTH D8740250GT H 40870 MHz GaAs Power Doubler Hybrid 40-870MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description Features The D8740250GTH is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides

Contextual Info: S8740340 S8740340 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740340 is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides excellent

Contextual Info: S8740260GT S8740260GT 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740260GT is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides

Contextual Info: S8740240P12 S8740240P12 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740240P12 is a Hybrid Push Pull amplifier module. The part employs GaAS die and is operated from 40MHz to 870MHz. It provides

Contextual Info: S8740340PT S8740340PT 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740340PT is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides

Contextual Info: D8740240GT D8740240GT 40-870 MHz GaAs Power Doubler Hybrid 40-870MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description Features The D8740240GT is a Hybrid Power Doubler amplifier module. The part employs GaAS die and is operated from 40MHz to 870MHz. It provides

Contextual Info: S8740220P S8740220P 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740220P is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides excellent

RA20H8087M

Abstract: RF MOSFET MODULE RA20H8087M-101 F8068
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to

RF MOSFET MODULE

Abstract: RA45H7687M1 RA45H7687M1-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to

CGE887BO

Abstract: linear DC power supply
Contextual Info: 870MHZ.GaAs CGE887BO Optical Receiver Module FEATURES OUTLINE GaAs ACTIVE DEVICES POWER GAIN 20 dB STANDARD CATV OUTLINE EXCELLENT LINEAR GAIN LOW NOISE FIGURE LOW COST HIGH RELIABILITY FC/APC CONNECTOR JDS VERSION Pin:1 2 3 5 789 DESCRIPTION Hybrid high dynamic range optical receiver

S0149

Abstract: M1421
Contextual Info: m m m R F Produci^ M ic m m s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 S D Ì 495 RF & MICROWAVE TRANSISTORS 850-890MHZ CLASS C, BASE STATIONS * < « • . . . CLASS C TRANSISTOR FREQUENCY 870MHz VOLTAGE 24V POWER OUT 35.0W

fm transmitter 500m range

Contextual Info: Features • The CDPRX3-4 8 -ER is a high performance FM narrow band receiver for use in the 433- 4MHz or 868-870Mhz ISM bands for the European market. • Embedded "easy-Radio" software protocols means no radio software to write. • Fast time to market; instant radio link.

8 channel rf remote control

Abstract: 8 channel remote control transmitter circuit 5khz transmitter CDP-03S fm transmitter 300m range CDP-TX-03S UHF FM receiver CDP-03 short range wireless data communication circuit
Contextual Info: UHF Narrow Band Single Channel Transmitter/Receiver CDP-TX-03S / CDP-RX-03AS CDP-03S is designed to cover band plan of CEPT ERC Recommendation 70-03 on Short Range Device SRD in the range of European harmonized band 868-870MHz. The small size and low power consumption of the CDP-03S are suitable for various application field,