Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.
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RD10MMS2
870MHz
RD10MMS2
12Wtyp,
870MHz
800MHz-band
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S8740340PT
Abstract: No abstract text available
Text: S8740340PT S8740340PT 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740340PT is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides
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S8740340PT
40MHz
870MHz
OT-115J
S8740340PT
870MHz.
870MHz
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M68745L
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68745L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 45 2 3 42 2-R1.5 1 4 5 5 18 5 8.5 36.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY
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M68745L
806-870MHz,
870MHz
M68745L
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D8740320GTH
Abstract: No abstract text available
Text: Product Specification D8740320GTH GaAs Power Doubler, 40 – 870MHz, 32.0dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC FEATURES • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability
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D8740320GTH
870MHz,
440mA
24VDC
870MHz
D8740320GTH
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RD07MUS2B
Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
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AN-900-039-A
RD07MUS2B
763-870MHz
RD07MUS2B:
084YH-G"
RD07MUS2B
870MHz
250mA
characteristic1JA01
GRM1882C1H101JA01
Single-Stage amplifier
GRM2162C1H151JD01E
817MHz
RD07M
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GRM1882C1H100JA01D
Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V
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AN-900-040-A
RD01MUS1
RD07MUS2B
763-870MHz
RD07MUS2B:
086ZE-G"
RD01MUS1:
RD07MUS2B
250mA
GRM1882C1H100JA01D
GRM1882C1H
grm1882c1h4r0cz01d
GRM1882C1H8R0DZ01
GRM1882C1H9R0DZ01D
RPC05-182
LQG11A8N2S00
GRM1882C1H150JA01D
GRM1882C1H120JA01D
GRM1882C1H8R0DZ01D
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C213
Abstract: C6006 CX6006 CX6006L 83RF
Text: DIPLEXERS FOR HFC EQUIPMENT AND CABLE MODEMS For International Applications Ideal for HFC equipment, cable modem and set top box equipment Improved performance Small surface mount component Y 65/85MHz frequency splits AR 5 - 870MHz range Electrical Specifications @ 25°C — Operating Temperature -40°C to +85°C
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65/85MHz
870MHz
5-65MHz
85-870MHz
CX6006
65-85MHz
85-750MHz
751-870MHz
C213
C6006
CX6006
CX6006L
83RF
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C213A
Abstract: 1055 C213 CX6006 CX6006L
Text: DIPLEXERS FOR HFC EQUIPMENT AND CABLE MODEMS For International Applications Ideal for HFC equipment, cable modem and set top box equipment Improved performance Small surface mount component 65/85MHz frequency splits1 5 - 870MHz range Electrical Specifications @ 25°C — Operating Temperature -40°C to +85°C
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65/85MHz
870MHz
5-65MHz
85-870MHz
65-85MHz
85-750MHz
751-870MHz
85-400MHz
C213A
1055
C213
CX6006
CX6006L
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Untitled
Abstract: No abstract text available
Text: D8740300GTH D8740300GTH GaAs Power Doubler Hybrid 40MHz to 870MHz Package: SOT-115J The D8740300GTH is a Hybrid Power Doubler amplifier module with high output capability. The D8740300GTH employs GaAs dice and is operated from 40MHz to 870MHz. The part provides excellent linearity and superior return loss
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D8740300GTH
40MHz
870MHz
OT-115J
D8740300GTH
870MHz.
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Untitled
Abstract: No abstract text available
Text: PI3LVD412 3.3V, 4-differential channel LVDS switch targeted for 18bit displays Features Description • Designed specifically to switch LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 870MHz typ • Low Xtalk, (-28dB typ)
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PI3LVD412
18bit
870MHz
-28dB
PI3LVD412
PS8978B
42-Pin
42-contact
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SM-118A
Abstract: ET1-1-75-3 MABA-008184-CT17TB M513 MABA-008184-CT1760 CURRENT TRANSFORMER PCB MOUNT PCB MOUNT CURRENT TRANSFORMER SM-118-A
Text: RoHS Compliant 1:1 Transformer with tap 50-870MHz MABA-008184-CT1760 V1 Features • • • • • • Schematic Surface Mount 1:1 Impedance 260°C Reflow Compatible RoHS* Compliant RoHS version of ET1-1-75-3 Available on Tape and Reel. Reel quantity 900
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50-870MHz
MABA-008184-CT1760
ET1-1-75-3
MABA-008184-CT1760
SM-118A
MABA-008184-Cn
SM-118A
ET1-1-75-3
MABA-008184-CT17TB
M513
CURRENT TRANSFORMER PCB MOUNT
PCB MOUNT CURRENT TRANSFORMER
SM-118-A
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Untitled
Abstract: No abstract text available
Text: D8740250GTH D8740250GT H 40870 MHz GaAs Power Doubler Hybrid 40-870MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description Features The D8740250GTH is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides
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D8740250GTH
D8740250GT
40-870MHz
OT-115J
D8740250GTH
40MHz
870MHz.
870MHz
440mA
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Untitled
Abstract: No abstract text available
Text: S8740340 S8740340 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740340 is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides excellent
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S8740340
40MHz
870MHz
OT-115J
S8740340
870MHz.
870MHz
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Untitled
Abstract: No abstract text available
Text: S8740260GT S8740260GT 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740260GT is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides
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S8740260GT
40MHz
870MHz
OT-115J
S8740260GT
870MHz.
870MHz
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Untitled
Abstract: No abstract text available
Text: S8740240P12 S8740240P12 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740240P12 is a Hybrid Push Pull amplifier module. The part employs GaAS die and is operated from 40MHz to 870MHz. It provides
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S8740240P12
40MHz
870MHz
OT-115J
S8740240P12
870MHz.
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Untitled
Abstract: No abstract text available
Text: S8740340PT S8740340PT 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740340PT is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides
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S8740340PT
40MHz
870MHz
OT-115J
S8740340PT
870MHz.
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Untitled
Abstract: No abstract text available
Text: D8740240GT D8740240GT 40-870 MHz GaAs Power Doubler Hybrid 40-870MHz GaAs POWER DOUBLER HYBRID Package: SOT-115J Product Description Features The D8740240GT is a Hybrid Power Doubler amplifier module. The part employs GaAS die and is operated from 40MHz to 870MHz. It provides
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D8740240GT
40-870MHz
OT-115J
D8740240GT
40MHz
870MHz.
870MHz
375mA
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Untitled
Abstract: No abstract text available
Text: S8740220P S8740220P 40MHz to 870 MHz GaAs Push Pull Hybrid 40MHz to 870MHz GaAs PUSH PULL HYBRID Package: SOT-115J Product Description Features The S8740220P is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 870MHz. It provides excellent
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S8740220P
40MHz
870MHz
OT-115J
S8740220P
870MHz.
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RA20H8087M
Abstract: RF MOSFET MODULE RA20H8087M-101 F8068
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M RoHS Compliance, 806-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to
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RA20H8087M
806-870MHz
RA20H8087M
20-watt
870-MHz
RF MOSFET MODULE
RA20H8087M-101
F8068
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RF MOSFET MODULE
Abstract: RA45H7687M1 RA45H7687M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to
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RA45H7687M1
763-870MHz
RA45H7687M1
45-watt
870-MHz
RF MOSFET MODULE
RA45H7687M1-101
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CGE887BO
Abstract: linear DC power supply
Text: 870MHZ.GaAs CGE887BO Optical Receiver Module FEATURES OUTLINE GaAs ACTIVE DEVICES POWER GAIN 20 dB STANDARD CATV OUTLINE EXCELLENT LINEAR GAIN LOW NOISE FIGURE LOW COST HIGH RELIABILITY FC/APC CONNECTOR JDS VERSION Pin:1 2 3 5 789 DESCRIPTION Hybrid high dynamic range optical receiver
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870MHZ
CGE887BO
870MHZ
CGE887BO
linear DC power supply
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fm transmitter 500m range
Abstract: No abstract text available
Text: Features • The CDPRX3-4 8 -ER is a high performance FM narrow band receiver for use in the 433- 4MHz or 868-870Mhz ISM bands for the European market. • Embedded "easy-Radio" software protocols means no radio software to write. • Fast time to market; instant radio link.
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868-870Mhz
75MHz;
25KHz
75MHz
075MHz
868-870MHzMHz
25KHz
-120dBm/434MHz;
-117dBm/868Mhz
fm transmitter 500m range
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8 channel rf remote control
Abstract: 8 channel remote control transmitter circuit 5khz transmitter CDP-03S fm transmitter 300m range CDP-TX-03S UHF FM receiver CDP-03 short range wireless data communication circuit
Text: UHF Narrow Band Single Channel Transmitter/Receiver CDP-TX-03S / CDP-RX-03AS CDP-03S is designed to cover band plan of CEPT ERC Recommendation 70-03 on Short Range Device SRD in the range of European harmonized band 868-870MHz. The small size and low power consumption of the CDP-03S are suitable for various application field,
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CDP-TX-03S
CDP-RX-03AS
CDP-03S
868-870MHz.
868-870MHz
-56dBm
200nW
-117dBm
8 channel rf remote control
8 channel remote control transmitter circuit
5khz transmitter
fm transmitter 300m range
UHF FM receiver
CDP-03
short range wireless data communication circuit
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S0149
Abstract: M1421
Text: m m m R F Produci^ M ic m m s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 S D Ì 495 RF & MICROWAVE TRANSISTORS 850-890MHZ CLASS C, BASE STATIONS * < « • . . . CLASS C TRANSISTOR FREQUENCY 870MHz VOLTAGE 24V POWER OUT 35.0W
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850-890MHZ
870MHz
M1421
SQ1495
S01495
720/18-aa
S0149
M1421
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