880-112 5V Search Results

"Infrared LED" 880 nm wavelength circuits

Contextual Info: Dialight 3mm Prism CBI® Infrared Emitter True Surface Mount LED 4.3 [.170] 591-7101-1xx Part No.* 591-7101-1xx CATHODE ID 6.1 [.240] 2.1 [.082] 2.8 [.112] Applications 2.8 [.112] 5.0 [.198] Configuration 880 nm IR Emitter • Control and drive circuits

"on semiconductor"

Abstract: E160 MC100E193 MC100E193FN MC100E193FNR2 MC10E193 MC10E193FN MC10E193FNR2 p4350
Contextual Info: MC10E193, MC100E193 5VĄECL Error Detection/ Correction Circuit The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also

socket 775 pinout

Abstract: PLCC28 package
Contextual Info: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also

SECDED

Contextual Info: This document, MC10E193/D has been canceled. LAN was sent 01/03/2002  Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 4 1 Publication Order Number: MC10E193/D MC10E193, MC100E193 MC10E193, MC100E193 5VĄECL Error Detection/ Correction Circuit

3525 "application note"

Abstract: SECDED ic 4050 AN1404 AND8020 E160 MC100E193 MC100E193FN MC100E193FNR2 socket 775 pinout
Contextual Info: MC100E193 5VĄECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also

Contextual Info: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also

SCR 2140

Contextual Info: ECP100D The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier x 18 dB Gain @ 900 MHz x 12 dB Gain @ 1960 MHz x Single Positive Supply +5V Applications x Final stage amplifiers for Repeaters x Mobile Infrastructure x Defense / Homeland Security

ECP200D

Contextual Info: ECP200D The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier x 18 dB Gain @ 900 MHz x 11 dB Gain @ 1960 MHz x Single Positive Supply +5V Applications x Final stage amplifiers for Repeaters x Mobile Infrastructure x Defense / Homeland Security

Contextual Info: ECP100D 1 Watt, High Linearity InGaP HBT Amplifier • +46 dBm Output IP3 • Single Positive Supply +5V • Lead-free/green/RoHS-compliant 16pin 4mm QFN package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure • Defense / Homeland Security

AH215-S8

Abstract: ECP100D ECP100D-G ECP100D-PCB1960 ECP100D-PCB2140 ECP100D-PCB900 l475
Contextual Info: ECP100D The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier x 18 dB Gain @ 900 MHz x 12 dB Gain @ 1960 MHz x Single Positive Supply +5V x Lead-free/Green/RoHS-compliant 16pin 4mm QFN package Applications x Final stage amplifiers for

stripline directional couplers

Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Contextual Info: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,

TRANSISTOR REPLACEMENT GUIDE

Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Contextual Info: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station

MMM6029

Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Contextual Info: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular

VTE1163

Contextual Info: GaAlAs Infrared Emitting Diodes VTE1163 TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip

VTE1163H

Abstract: 880nm
Contextual Info: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip

339 opamp

Abstract: OPamp 60V depth sounder LM6142 model SPICE LM6144 equivalent phase failure / phase reversal LM6144BIN LM6142 LM6142AIM LM6142AIN
Contextual Info: LM6142 Dual and LM6144 Quad High Speed Low Power 17 MHz Rail-to-Rail Input-Output Operational Amplifiers General Description Features At VS e 5V Using patent pending new circuit topologies the LM6142 44 provides new levels of performance in applications where low voltage supplies or power limitations previously made compromise necessary Operating on supplies

LM6142 model SPICE

Abstract: OPamp 60V rail to rail opamp LM6142 LM6142AIM LM6142AIN LM6142BIM LM6142BIN LM6144 LM6144AIM
Contextual Info: LM6142 Dual and LM6144 Quad High Speed Low Power 17 MHz Rail-to-Rail Input-Output Operational Amplifiers General Description Features At VS e 5V Using patent pending new circuit topologies the LM6142 44 provides new levels of performance in applications where low voltage supplies or power limitations previously made compromise necessary Operating on supplies

1034-01

Abstract: 74 series family LP5080A LP5140A LP7080C LP7080P LP7140P LP7220P Laserpath Corporation lsi logic arrays
Contextual Info: LSP LASERPATH LP7000P, LP7000C, LP5000A Series Gate Arrays ONE DAY GATE ARRAYS A p ril 1987 Laserpath’s LP7000P, LP7000C, and LP5000A Series are high I/O gate arrays, manufac­ tured using 2-micron, 2-layer metal HCMOS technology. They have the same electrical

M 9587

Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Contextual Info: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station

Contextual Info: MC100EP16VT 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing and Internal Input Termination The MC100EP16VT is a differential receiver functionally equivalent to the 100EP16 with input pins controlling the amplitude of the outputs pin 1 and providing an internal termination network (pin 4).

500MHz Frequency Counter Using MECL

Abstract: MC100E016 MC100E016FN MC100E016FNR2 MC10E016 MC10E016FN MC10E016FNR2 MC10H016 APPLICATIONS OF mod 20 COUNTER
Contextual Info: MC10E016, MC100E016 5VĄECL 8ĆBit Synchronous Binary Up Counter The MC10E/100E016 is a high-speed synchronous, presettable, cascadable 8-bit binary counter. Architecture and operation are the same as the MC10H016 in the MECL 10H family, extended to 8-bits,

500MHz Frequency Counter Using MECL

Abstract: MC100E016 MC100E016FN MC100E016FNR2 MC10E016 MC10E016FN MC10E016FNR2 MC10H016 Presettable Counter example spice up down
Contextual Info: MC10E016, MC100E016 5VĄECL 8ĆBit Synchronous Binary Up Counter The MC10E/100E016 is a high-speed synchronous, presettable, cascadable 8-bit binary counter. Architecture and operation are the same as the MC10H016 in the MECL 10H family, extended to 8-bits,

IC/SCR 131- 6 WJ 69

Contextual Info: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS Fast Page Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM364C213B is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C213B consists of eight CMOS

1125MAX

Abstract: 94V-0 SR-02
Contextual Info: 3mm Dialight Prism* CBrinfrared Emitter True Surface Mount LED 591-7101-1xx COLLECTOR ID _L 8 8 0 nm IR E m itter • Control and drive circuits 1 C O L LE C T O R \ 2.00 1 . 7 5 \ [ ° 79! [.069 - i Configuration Applications [. 112! l^n ! nd j| [ 125] MAX