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    Excelitas Technologies Corporation VTE1163H

    Ir Emitter, 880Nm, 4.78Mm, To-46-2, Though Hole; Viewing Angle:10°; Diode Case Style:To-46; Forward Current If(Av):100Ma; Forward Voltage Vf Max:2.8V; Rise Time:1Μs; Fall Time Tf:1Μs; Operating Temperature Min:-55°C; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTE1163H
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    VTE1163H Datasheets Context Search

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    Contextual Info: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip


    Original     		VTE1163H PDF

    VTE1163H

    Abstract: 880nm
    Contextual Info: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip


    Original     		VTE1163H VTE1163H 880nm PDF