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    882N03 Search Results

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    Rochester Electronics LLC BSC882N03MSGATMA1

    MOSFET N-CH 34V 22A/100A TDSON
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    DigiKey BSC882N03MSGATMA1 Bulk 35,000 449
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    Rochester Electronics LLC BSC882N03MSG

    N-CHANNEL POWER MOSFET
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    DigiKey BSC882N03MSG Bulk 23,996 474
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    Infineon Technologies AG BSC882N03MSGATMA1

    MOSFET N-CH 34V 22A/100A TDSON
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    Rochester Electronics BSC882N03MSGATMA1 35,000 1
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    Infineon Technologies AG BSC882N03LSGATMA1

    MOSFET N-CH 34V 8TDSON
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    DigiKey () BSC882N03LSGATMA1 Reel
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    Rochester Electronics BSC882N03LSGATMA1 20,200 1
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    Infineon Technologies AG BSC882N03MSG

    Power Field-Effect Transistor, 22A, 34V, 0.0033ohm, N-Channel, MOSFET
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    Rochester Electronics BSC882N03MSG 23,996 1
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    Component Electronics, Inc BSC882N03MSG 40
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    882N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    882N03MS

    Abstract: 882N03 BSC882N03MSG bsc882n03
    Contextual Info: 882N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 2.6 mΩ V GS=4.5 V 3.3 ID


    Original     		BSC882N03MS 882N03MS 882N03MS 882N03 BSC882N03MSG bsc882n03 PDF

    882N03MS

    Abstract: 882N03
    Contextual Info: 882N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 34 V V GS=10 V 2.6 mΩ V GS=4.5 V 3.3 ID


    Original     		BSC882N03MS IEC61249-2-21 882N03MS 882N03MS 882N03 PDF