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    8MX16 Search Results

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    8MX16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI

    Untitled

    Abstract: No abstract text available
    Text: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1


    Original     		PDF CMS4A16LAx 8Mx16) 160ns 350uA 400uA

    Untitled

    Abstract: No abstract text available
    Text: 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Dimensions Description The TS16MLS64V8C2 is a 16M bit x 64 Synchronous Side Millimeters Inches Dynamic RAM high-density for PC-100 CL2. The A 133.35±0.40 5.250±0.016 TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits


    Original     		PDF 128MB 168PIN PC100 TS16MLS64V8C2 TS16MLS64V8C2 PC-100 8Mx16 400mil 168-pin

    IS42VM81600E

    Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
    Text: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42VM81600E IS42VM16800E IS42VM32400E IS45VM81600E IS45VM16800E IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42VM32400E-75TL IS42VM16800E-75BLI

    HYM71V8635ALT6-H

    Abstract: HYM71V8635ALT6-K HYM71V8635AT6 HYM71V8635AT6-H HYM71V8635AT6-K
    Text: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635AT6 Series DESCRIPTION The Hynix HYM71V8635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 8Mx64 PC133 8Mx16 HYM71V8635AT6 8Mx64bits 8Mx16bits 400mil 54pin 168pin HYM71V8635ALT6-H HYM71V8635ALT6-K HYM71V8635AT6-H HYM71V8635AT6-K

    K4S28163LD

    Abstract: K4S28163
    Text: Mobile SDRAM VDD 2.5V, VDDQ 1.8V & 2.5V K4S28163LD-RG(S) Preliminary CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 85°C Operation) Revision 0.6 October 2001 Rev. 0.6 Oct. 2001 Mobile SDRAM (VDD 2.5V, VDDQ 1.8V & 2.5V) K4S28163LD-RG(S) Preliminary


    Original     		PDF K4S28163LD-RG 8Mx16 128Mb PC133, PC100, 200us. K4S28163LD K4S28163

    Untitled

    Abstract: No abstract text available
    Text: M463L0914DT0 172pin DDR Micro SODIMM 64MB DDR SDRAM MODULE 8Mx64 based on 8Mx16 DDR SDRAM 172pin Micro DIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.0 Dec. 2001 M463L0914DT0 172pin DDR Micro SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release


    Original     		PDF M463L0914DT0 172pin 8Mx64 8Mx16 64-bit

    da53

    Abstract: DB26
    Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any


    Original     		PDF 8Mx16/18x4i) DL0117-010 da53 DB26

    Untitled

    Abstract: No abstract text available
    Text: 16Mx72 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M755HC L T6 Series DESCRIPTION The HYM71V16M755HC(L)T6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of ten 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy


    Original     		PDF 16Mx72 PC100 8Mx16 HYM71V16M755HC 16Mx72bits 8Mx16bits 400mil 54pin 144pin

    sdram cmos

    Abstract: No abstract text available
    Text: CMOS SDRAM K4S28163LD-RF/R 8Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RF/R CMOS SDRAM Revision History Revision 0.0 (December 8. 2000, Preliminary) • First generation of 128Mb Low Power SDRAM (V DD 2.5V, VDDQ 1.8V).


    Original     		PDF K4S28163LD-RF/R 8Mx16 54CSP 128Mb 133MHz, 100MHz, 66MHz. K4S28163LD-RG/SXX K4S28163LD-RF/RXX sdram cmos

    HY5DV281622DT-4

    Abstract: No abstract text available
    Text: HY5DV281622DT 128M 8Mx16 DDR SDRAM HY5DV281622DT This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Aug. 2003


    Original     		PDF HY5DV281622DT 8Mx16) HY5DV281622DT-4/5/6 HY5DV281622DT-33/36 400mil 66pin HY5DV281622DT-4

    Untitled

    Abstract: No abstract text available
    Text: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635HCT6 Series DESCRIPTION The Hynix HYM71V8635HCT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 8Mx64 PC133 8Mx16 HYM71V8635HCT6 8Mx64bits 8Mx16bits 400mil 54pin 168pin

    HY5DV

    Abstract: No abstract text available
    Text: HY5DV281622DTP 128M 8Mx16 DDR SDRAM HY5DV281622DTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DV281622DTP 8Mx16) HY5DV281622 728-bit 8Mx16 400mil HY5DV

    Untitled

    Abstract: No abstract text available
    Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 133MHz, 125MHz 100MHz52

    Untitled

    Abstract: No abstract text available
    Text: SM564083574NZ3R January 11, 2002 Orderable Part Numbers Module Part Number SM564083574NZ3R Description 8Mx64 64MB , SDRAM, 144-pin SODIMM Unbuffered, 8Mx16 Based, CL3, PC133 Revision History • January 11, 2001 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM564083574NZ3R 8Mx64 144-pin 8Mx16 PC133 64MByte

    100MHZ

    Abstract: 133MHZ 8MX32 WED3DL328V
    Text: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES             DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x2Mx32. 8Mx16 133MHZ, 125MHZ 100MHZ 100MHZ 133MHZ

    Untitled

    Abstract: No abstract text available
    Text: K4S28163LD-R B F/R CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)F/R CMOS SDRAM 2M x 16Bit x 4 Banks Mobile sDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S28163LD-R 8Mx16 54CSP 16Bit

    HYM71V16M655BT6-P

    Abstract: HYM71V16M655BT6-S HYM71V16655BT6 HYM71V16M655BLT6-8 HYM71V16M655BLT6-P HYM71V16M655BLT6-S
    Text: 16Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16655BT6 Series Preliminary DESCRIPTION The Hynix HYM71V16655BT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits


    Original     		PDF 16Mx64 PC100 8Mx16 HYM71V16655BT6 16Mx64bits 8Mx16bits 400mil 54pin 168pin HYM71V16M655BT6-P HYM71V16M655BT6-S HYM71V16M655BLT6-8 HYM71V16M655BLT6-P HYM71V16M655BLT6-S

    VDAAA2404

    Abstract: No abstract text available
    Text: V-Data VDAAA2404 PC-100/CL2 SDRAM Unbuffered DIMM 8Mx64bits SDRAM DIMM based on 8Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDAAA2404 is 8Mx64 bits Synchronous DRAM Modules, The modules are composed of four 8Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil


    Original     		PDF VDAAA2404 PC-100/CL2 8Mx64bits 8Mx16, VDAAA2404 8Mx64 8Mx16 400mil 54pin 168pin

    B6666RB

    Abstract: VDABA2404
    Text: V-Data VDABA2404 PC-133/CL2 SDRAM Unbuffered DIMM 8Mx64bits SDRAM DIMM based on 8Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDABA2404 is 8Mx64 bits Synchronous DRAM Modules, The modules are composed of four 8Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil


    Original     		PDF VDABA2404 PC-133/CL2 8Mx64bits 8Mx16, VDABA2404 8Mx64 8Mx16 400mil 54pin 168pin B6666RB

    K1B2816

    Abstract: No abstract text available
    Text: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length


    Original     		PDF K1B2816B6M 8Mx16 K1B2816

    Untitled

    Abstract: No abstract text available
    Text: KMM366S924TS PC100 Unbuffered DIMM Revision History Revision 0.1 Jun. 14, 1999 - Changed "Detail C" in PCB Dimension and eliminated misprinted heat sink. Rev. 0.1 Jun. 1999 PC100 Unbuffered DIMM KMM366S924TS KMM366S924TS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM366S924TS PC100 KMM366S924TS 8Mx64 8Mx16, 400mil

    Untitled

    Abstract: No abstract text available
    Text: M368L0914BT1 184pin Unbuffered DDR SDRAM MODULE 64MB DDR SDRAM MODULE 8Mx64 based on 8Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.6 June. 2000 - -1 - Rev. 0.6 June. 2000 M368L0914BT1 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M368L0914BT1 184pin 8Mx64 8Mx16 64-bit 133Mhz) 133Mhz/266Mbps

    Untitled

    Abstract: No abstract text available
    Text: K1S28161CM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter


    Original     		PDF K1S28161CM 8Mx16