8MX64 Search Results

Contextual Info: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM

HYM71V8635ALT6-H

Abstract: HYM71V8635ALT6-K HYM71V8635AT6 HYM71V8635AT6-H HYM71V8635AT6-K
Contextual Info: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635AT6 Series DESCRIPTION The Hynix HYM71V8635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

M366S0824ET0

Abstract: M366S0824ET0-C1H M366S0824ET0-C1L
Contextual Info: PC100 Unbuffered DIMM M366S0824ET0 M366S0824ET0 SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

DDR200

Abstract: DDR266B HYMD186456-H HYMD186456-L
Contextual Info: HYMD186456-H/L 8Mx64 Unbuffered DDR SDRAM DIMM PRELIMINARY DESCRIPTION Hynix HYMD186456-H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 8Mx64 high-speed memory arrays. Hynix HYMD186456-H/L series consists of

Contextual Info: 8M x 64 Bit 5V BUFFERED FPM DIMM Fast Page Mode FPM DRAM DIMM 64800s-D5rG34nD 168 Pin 8Mx64 FPM DIMM Buffered, 2/4k Refresh, 5V Pin Assignment General Description Pin# Front Side 1 Vss 2 DQ0 3 DQ1 4 DQ2 5 DQ3 6 Vcc 7 DQ4 8 DQ5 9 DQ6 10 DQ7 11 PQ8 12 Vss

Contextual Info: M463L0914DT0 172pin DDR Micro SODIMM 64MB DDR SDRAM MODULE 8Mx64 based on 8Mx16 DDR SDRAM 172pin Micro DIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.0 Dec. 2001 M463L0914DT0 172pin DDR Micro SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release

DS558

Abstract: 6480A6EWS4G09TC
Contextual Info: 8M x 64 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 6480A6EWS4G09TC 144 Pin 8Mx64 EDO SODIMM Unbuffered, 4k Self Refresh, 3.3V with SPD General Description Pin Assignment Pin# The 6480A6EWS4G09TC is a 8Mx64 bit, 9 chip, 3.3V, 144 Pin SODIMM module consisting of (8) 8Mx8

pc133 SDRAM DIMM

Abstract: 64814GSEM4G09T PC133
Contextual Info: 8M x 64 Bit PC-133 SDRAM DIMM PC-133 SYNCHRONOUS DRAM DIMM 64814GSEM4G09T 168 Pin 8Mx64 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD General Description Pin Assignment The 64814GSEM4G09T is a 8Mx64 bit, 9 chip, 168 Pin DIMM module consisting of 8 2Mx8x4

HYM7V65801BTFG-10S

Abstract: HYM7V65801BTFG HYM7V65801BTFG-10P HYM7V65801BTFG-8
Contextual Info: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B F-Series DESCRIPTION The Hynix HYM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on

Contextual Info: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635HCT6 Series DESCRIPTION The Hynix HYM71V8635HCT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

Contextual Info: 8Mx64 bits Unbuffered DDR SDRAM SO-DIMM HYMD18M645A L 6-K/H/L DESCRIPTION Hynix HYMD18M645A(L)6-K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 8Mx64 high-speed memory arrays. Hynix

HSD8M64B8A

Contextual Info: HANBit HSD8M64B8A Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B8A GENERAL DESCRIPTION The HSD8M64B8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.

kr 720

Abstract: HSD8M64B4W HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12
Contextual Info: HANBit HSD8M64B4W Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B4W GENERAL DESCRIPTION The HSD8M64B4W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.

8735C

Contextual Info: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out

47D5

Abstract: 13T8644HPE-10T
Contextual Info: IBM13T8644HPD IBM13T8644HPE One Bank 8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Low Power • Performance: -360 -10 3 3 100 100 t;K Clock Cycle 10 10 i ns

Contextual Info: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM

Contextual Info: IBM 11 M8645H 8M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data • Performance:

K4S281632C-TL1L

Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L

Contextual Info: SM564083574NZ3R January 11, 2002 Orderable Part Numbers Module Part Number SM564083574NZ3R Description 8Mx64 64MB , SDRAM, 144-pin SODIMM Unbuffered, 8Mx16 Based, CL3, PC133 Revision History • January 11, 2001 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SM564088574N6BS September 25, 2002 Ordering Information Part Numbers SM564088574N6BS Description 8Mx64 64MB , SDRAM 168-pin DIMM, Unbuffered, 8Mx8 Based, PC133, CL=2 & 3, 34.93mm Revision History • September 25, 2002 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

WED3DG649V-D1

Contextual Info: White Electronic Designs WED3DG649V-D1 64MB- 8Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible Burst Mode Operation Auto and Self Refresh capability LVTTL compatible inputs and outputs Serial Presence Detect with EEPROM Fully synchronous: All signals are registered on the positive

Contextual Info: DRAM MODULE M364C080 8 3CJ(T)0-C Buffered 8Mx64 DIMM (8Mx8 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. M364C080(8)3CJ(T)0-C DRAM MODULE M364C080(8)3CJ(T)0-C

VDAAA2404

Contextual Info: V-Data VDAAA2404 PC-100/CL2 SDRAM Unbuffered DIMM 8Mx64bits SDRAM DIMM based on 8Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDAAA2404 is 8Mx64 bits Synchronous DRAM Modules, The modules are composed of four 8Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil

HYM72V16M656BTU6

Abstract: HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12
Contextual Info: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656BTU6 Series DESCRIPTION The HYM72V16M656BTU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy