8C SOT23 Search Results

8c SOT 23

Abstract: marking 8C MMBZ5228B 8c marking 8c sot23
Contextual Info: SEMICONDUCTOR MMBZ5228B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8C No. 1 Item Marking Device Mark 8C MMBZ5228B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

Motorola rectifiers zener diodes

Abstract: motorola diode smb diode zener motorola
Contextual Info: Table of Contents D iscre te P ro d u c t L in e s . 8C-70/SOT-323 D e vice s. RF Transistors .

ATV1014

Abstract: ce07 8C SOT-23 ATV1000 ATV1001 ATV1002 VR24
Contextual Info: ATV1000 SERIES SILICON ABRUPT TUNING VARACTOR DESCRIPTION: PACKAGE STYLE SOT-23 SILICON ABRUPT TUNING VARACTOR DIODES IN A SOT-23 PACKAGE •r V P.D. INCHES MILLIMETERS 100nA@ Vr =24 VOLTS [HU MIN A 2 8C MAX 3.04 0.1102 MAX 0 1197 B 1 20 1.40 00472 00551 C

ACS1000

Contextual Info: /m ACS1000 SERIES SURFACE MOUNT SILICON SCHOTTKY BARRIER DIODES DESCRIPTION: PACKAGE STYLE SOT-23 PACKAGE MU A e c I AS SHOWN V AS SHOWN P.D. 100mW @ TC=25°C D G H J K L S V M LU M É t m HIN MAX 3.04 2 8C 1.40 1.20 1.11 089 0 37 0.50 1.78 2.04 0 313 0.100

81g diode

Abstract: 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v
Contextual Info: Zener Diode BZX84C 350mW MMBZ5221B - 5256B miniReel Order f' Number Volt SOT23 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 12V 15V 16V 18V 20V 22V 24V 27V 30V 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232

Contextual Info: M 2 4 A A 0 0 /2 4 L C 0 0 /2 4 C 0 0 ic r o c h ip 128 Bit I2C Bus Serial EEPROM DEVICE SELECTION TABLE Device PACKAGE TYPES V cc Range Temp Range 24AA00 1.8 - 6.0 C,l 24LC00 2.5 - 6.0 C,l 24C00 4.5 - 5.5 C, I ,E 8-PIN PDIP/SOIC 2 7 □ NC X NCQ 3 V ss Q

MMBZ52

Abstract: MARKING 8S SOT-23
Contextual Info: 300mW ZENER DIODES MMBZ52 SERIES • New Product SOT23 Pkg. TA = 25˚C The latest comprehensive data to fully support these parts is readily available. TAPE & REEL SPECIFICATIONS SOT23 Tape Width Reel Diameter Quantity 8mm 178mm 3,000 8mm 330mm 10,000 Nom.

849B

Abstract: BC846 QQ2507 BC849 BC850 BC856 BC860 BC847 SOT23 b 514 transistor
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC846/847/848/849/850 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC849, BC850 • Com plem ent to BC856 . BC860 SOT-23 Characteristic Symbol

LY 2117

Abstract: 20/LY 2117
Contextual Info: 2 4 A A 0 0 /2 4 L C 0 0 /2 4 C 0 0 M ic r o c h ip 128 Bit I2C Bus Serial EEPR O M DEVICE SELECTION TABLE D e v ic e V c c R ange PACKAGE TYPES Tem p R ange 24A A00 1 .8 -6 .0 C ,l 24LC 00 2 .5 -6 .0 C ,l 24C 00 4 .5 -5 .5 C ,I,E 8-PIN PDIP/SOIC NC|Z 1

B 660 TG

Abstract: BCB46B C848B C848A C848C BC848A EO65
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors B C 8 4 6 A L T 1 ,B L T 1 BC8 4 7 A LT1, B L T 1 ,C L T 1 th ru B C 8 5 0 B L T 1 ,C L T 1 NPN Silicon 2 EMITTER BCB46, B C 847 and B C 848 are M o to rola P referred D ev ice s MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTC144EKALT1G 3 • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow

BZX 12v zener diode

Contextual Info: Zener Diode BZX84C MMBZ5221B - 5256B 4 Volt Type BZX 84 T ype M M BZ Part M arkings BZX MMBZ " m iniR eel O rder N um ber 500pcs. IniniB ag 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232 72-5234 72-5235 72-5236 72-5237 72-5239 72-5240

Diode SMD ED 7ca

Abstract: F54 SMD CODE MARKING msc 140 -10003 CX25872 GeForce2 MX 400 CX25874 nforce 430 SMD MARKING CODE 201 952 EIA-608B toshiba satellite a10 motherboard
Contextual Info: CX25874/5 Digital Encoder with Standard-Definition TV and High-Definition TV Video Output Data Sheet 101900B August 2004 Ordering Information Model Number Package Operating Temperature CX25874 64-pin TQFP 0 °C – 70 °C CX25875 1 (2)(3) 64-pin TQFP 0 °C – 70 °C

Zener diode 81A

Abstract: 5252B 5246B 18c zener diode MARK 8F Zener diode 81c Zener diode 18A MMBZ5239B 5250B DIODE 8L sot 23
Contextual Info: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES L B L • Small Package : SOT-23. -_L : o MAXIMUM RATING Ta=25°C SYMBOL RATING

MMBZ5227B 8B

Abstract: sg 81a 25CC MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5231B MMBZ5232B MMBZ5233B
Contextual Info: MOTOROLA SC -CDIODES/OPTO} 12E D I L3b72SS QOTTìDb d | '-Il-07 MMBZ5226B thru MMBZ5257B MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA CASE 318-05, STYLE 8 SOT-23 TO-236AA/AB THERMAL CHARACTERISTICS Characteristic Sym bol M ax Unit Pd 225 mW 1.8 m wrc

C4747

Abstract: MARKING LP SOT-323 8C SOT-23 TSA144C TSC144C TSC144CCU TSC144CCX
Contextual Info: TSC144C NPN Digital Transistor Pin assignment: 1. Input Base 2. Gnd (Emitter) 3. Output (Collector) Vcc = 50V Vin = - 10V ~ +12V Io = 100mA(max.) Equivalent Circuit Features Build-in bias resistor enable the configuration of an inverter circuit without connecting external input

Marking 18A

Abstract: MARKING 8S SOT-23
Contextual Info: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C

Contextual Info: Z en er Diode mini^eei' BZX84C and MMBZ Series ±5% Volt Part Markings Type BZX84 Type MMBZ B Z X 84 C 2 V 4 B Z X 84 C 2 V 7 M M B Z 5221B M M B Z 5223B M M B Z 5225B M M B Z 5226B M M B Z 5228B M M B Z 5229B M M B Z 5230B M M B Z5231B M M B Z 5232B M M B Z 5234B

5231B diode

Abstract: 5251B MARK 8E diode mark 8m sot-23 5237B 5233B 5228B MMBZ5226B MMBZ5257B 5235b
Contextual Info: MMBZ5226B - MMBZ5257B Series Discrete POWER & Signal Technologies N MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature

5252B

Abstract: Zener diode 81A
Contextual Info: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : SOT-23. MAXIMUM RATING Ta=25°C SYMBOL RATING CHARACTERISTIC p*D*

Zener sot marking 162

Abstract: marking 8D SOT 89 marking 81t marking 81J
Contextual Info: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232

Contextual Info: BSE D • flS3b320 G01b72? 5 H S I P Si-N Channel MOS FET Triode _ S I E M E N S / SPCLi BF 543 S E M IC O N D S T -2 \~ 2 £ ~ Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / d s s = 4 mA, gts = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution!

BC817

Abstract: BC817-16 BC817-25 BC817-40 EB-500
Contextual Info: DATA SHEET BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 300 mWatts Unit: inch mm FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 330 mW FEATURES • General purpose amplifier applications 0.120 3.04 • NPN epitaxial silicon, planar design 0.110(2.80) • Collector current IC = 500mA • In compliance with EU RoHS 2002/95/EC directives