8J MARKING Search Results

marking 8J

Abstract: MMBZ5234B 8J sot 23
Contextual Info: SEMICONDUCTOR MMBZ5234B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8J No. 1 Item Marking Device Mark 8J MMBZ5234B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

KIA78L*F

Abstract: 8J marking marking 8j sot-89 marking 8J KIA78L18F sot-89 MARKING SPECIFICATION SOT-89 marking 314
Contextual Info: SEMICONDUCTOR KIA78L18F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 J 1 314 2. Marking 2 Item Marking Description Device Mark 8J KIA78L18F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.

9926C

Abstract: IPI037N06L3 s4si IPP037N06L3 G
Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(

IPB230N06L3

Abstract: IPP230N06L3 G s4si
Contextual Info: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

606G

Abstract: 603G FR601G FR607G diagram fr 310
Contextual Info: E SEMICONDUCTOR FR601G -F R 6 0 7 G T A IW A N 6.0 AM PS. G iass Passivated Fast Recovery Rectifiers RoHS R-6 C O M P L IA N C E f .2ÆD¡721 .27i>:$.8j •53* M IN HA. I r F ea tu re s ^ ❖ 4 ^ ■> Low forward voltage drop High current capability High reliability

IPP037N06L3 G

Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G  3 Power-Transistor Product Summary Features V 9I . K R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R -@?>2I฀-' +&, Z R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD

Contextual Info: IPB049N06L3 G IPP052N06L3 G Jf]R  3 Power-Transistor Product Summary Features R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD V 9I . K R -@?>2I฀-' ,&/ Z I9 0( 6

Contextual Info: IPB081N06L3 G IPP084N06L3 G Jf]R  3 Power-Transistor Product Summary Features R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD V 9I . K R -@?>2I฀-' 0&) Z I9 -( 6

marking xd diode

Abstract: e866 marking 8fc marking J6c s4si
Contextual Info: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K 0&) Z" -( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

AF41

Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
Contextual Info: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K ,&/ Z" 0( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

ZENER 34b

Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

ZENER 34b

Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

TMPZ5254

Contextual Info: NER DIO DE SOT-23/TO -236AB ‘TMPZ’ ZENER DIO DES ELECTRICAL CHARACTERISTICS at T A. = 25°C Zener Voltage Device Min. Nom. Max. Leakage Current Zener Impedance Max @VR Max. ZCT Marking V (V) (V) @'zr (mA) (HA) (V) (Q) @'zr (mA) Pinning Type TMPZ5230

sot23 transistor marking y2

Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0

MMBZ5228B

Abstract: TMPZ5234B MMBZ52 MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B TMPZ5229B TMPZ5230B MMBZ5232B
Contextual Info: JGD MMBZ52 - SERIES O SURFACE MOUNT ZENER DIODES/SOT - 23 350mW CrossReference Dynamic Test Test Nominal Dynamic Imped. Current Current Imped. Zen.Vltg. Marking / i_ + @lzk W XZx @ Izt Code a Part No. MMBZ5226B Vz V TMPZ5226B Zzt(Q ) lzt( mA) Zzk(Q) lzk( mA)

TMPZ5231

Abstract: MMBZ5228B marking code 8P MMBZ5227B 8B TMPZ5232B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B MMBZ5231B
Contextual Info: CE MMBZ52-SERIES CHENYI ELECTRONICS 350mW SURFACE MOUNT ZENER DIODES Nominal Cross- Marking Zen.V1tg @Izt Dynamic Test Dynamic Test Revrese Test Imped. Current Imped. Current Current Voltage Package Reel Part No. Reference Code Ir uA Vr(V) MMBZ5226B TMPZ5226B

marking 81E

Abstract: TMPZ5231 Zener diode 81A marking 8C marking 8G mmbz52 MMBZ5227B 8B MMBZ5226B MMBZ5227B MMBZ5228B
Contextual Info: SURFACE MOUNT ZENER DIODES MMBZ52-SERIES 350mW Part No. Nominal Dynamic Test Dynamic Test Reverse Test Current Imped. Current Current Voltage Package Ir µA Vr(V) Reel Cross- Marking Zen.Vltg. Imped. Reference Code @ Izt @ Izt Vz(V) Zzt(Ω) @ Izk Izt(mA)

CH00-0250-008

Abstract: raychem tinel-lock ring D38999120
Contextual Info: REVISIONS DESCRIPTION L TR I I H11 REVISED PER EC0-11-005139 DATE !APPROVED 129MAR111 HMR IF THIS DOCUMENT IS PRINTED IT BECOMES UNCONTROLLED. CHECK FOR THE LATEST REVISION. CODE 40 TINEL-LOCK ADAPTER NOTESI 1. THIS PRODUCT IS DESIGNED TO TERMINATE A BRAIDED CABLE SHIELD AND

CMBZ-5240B

Contextual Info: 'IL CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1= ANODE 2= NC 3 = CATHODE 3.0_ ~ 2.8 0.14 0.48 538 3 2.6 2.4 _1.02 o.ar 2.00_ 1.80 0.60 0.40 Marking CMBZ5230B 31B

Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B

Marking 18A

Abstract: MARKING 8S SOT-23
Contextual Info: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C

PZ5233

Abstract: PZ5252 zca 8j 238BMM PZ5232 PZ5257 zca marking
Contextual Info: SPRAGUE/SEMICOND 85 1 4 0 1 9 SPRAGUE. =17 GROUP D aS13ÔSD S E M I C O N D S /ICS 93D 0D03bEÔ 4 03628 SMALL-OUTLINE DIODES T M P Z ’ Zener Diodes ELECTRICAL CHARACTERISTICS a Tfl = 25°C Leakage Current Zener Voltage Device Type I Marking Min. Nom. (V

Zener sot marking 162

Abstract: marking 8D SOT 89 marking 81t marking 81J
Contextual Info: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232

Contextual Info: Z en er Diode mini^eei' BZX84C and MMBZ Series ±5% Volt Part Markings Type BZX84 Type MMBZ B Z X 84 C 2 V 4 B Z X 84 C 2 V 7 M M B Z 5221B M M B Z 5223B M M B Z 5225B M M B Z 5226B M M B Z 5228B M M B Z 5229B M M B Z 5230B M M B Z5231B M M B Z 5232B M M B Z 5234B