8MMX13 Search Results

BS62LV2006

Abstract: BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32
Contextual Info: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : VCC = 3.0V Operation current : 23mA Max. at 55ns

BS62UV256

Abstract: BS62UV256DC BS62UV256PC BS62UV256PI BS62UV256SC BS62UV256SI BS62UV256TC BS62UV256TI
Contextual Info: Ultra Low Power CMOS SRAM 32K X 8 bit BS62UV256 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.8V ~ 3.6V y Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 150ns

Contextual Info: RMLV0408E Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0206EJ0100 Rev.1.00 2014.2.27 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher

Contextual Info: ESMT M53D128168A 2E Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS)

Contextual Info: ESMT M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.

TSOP32 pad

Abstract: bs62lv1027 R0201-BS62LV1027
Contextual Info: Very Low Power CMOS SRAM 128K X 8 bit BS62LV1027 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 18mA Max. at 55ns

Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit BS62LV1023 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current

Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 32K X 8 bit BS62LV2565 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current

CAT28LV65

Abstract: PARALLEL E2PROM
Contextual Info: Preliminary CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:

BS62LV2565

Abstract: BS62LV2565DC BS62LV2565JC BS62LV2565JI BS62LV2565PC BS62LV2565PI BS62LV2565SC BS62LV2565SI BS62LV2565TC BS62LV2565TI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 32K X 8 bit BS62LV2565 „ DESCRIPTION „ FEATURES • Wide Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade : 35mA Max. operating current I- grade : 40mA (Max.) operating current

CAT28C65B

Contextual Info: CAT28C65B 64K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: ■ Commercial, Industrial and Automotive – 120/150ns Temperature Ranges ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: – Active: 25 mA Max. – Standby: 100 µA Max.

LY621024PL-70LL

Abstract: LY621024PL
Contextual Info:  LY621024 128K X 8 BIT LOW POWER CMOS SRAM Rev. 1.8 REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 Rev. 1.7 Rev. 1.8 Description Issue Date Initial Issue Jul.25.2004 Revised sym. b of 32 pin 450mil SOP package outline dimension Jan.17.2007

Contextual Info: W988D6FB / W988D2FB 256Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential

Contextual Info: EM48AM3284LBB Revision History Revision 0.1 May. 2010 First release. Revision 0.2 (Sep. 2010) Delete CL=2 parameters Input Leakage Current = -2 A ~ +2 A Change Supply Voltage Rating = -0.5 ~ +2.3 Delete Deep Power Down Mode Change AC timing paramters: tRC & tIS

BS62LV1023

Abstract: BS62LV1023DC BS62LV1023JC BS62LV1023PC BS62LV1023SC BS62LV1023SI BS62LV1023STC BS62LV1023STI BS62LV1023TC BS62LV1023TI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 8 bit „ DESCRIPTION „ FEATURES • Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current 0.02uA (Typ.) CMOS standby current

Contextual Info: R1LV5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0068EJ0100 Rev.1.00 2011.04.13 Description The R1LV5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV5256E Series has realized

CAT28C64B

Abstract: 1N914 28C64B 28C64B-12 28C64B-15 28C64B-90 CAT28C64BNI-15T 1805F
Contextual Info: H EE GEN FR ALO CAT28C64B 64K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max.

CAT28LV256

Contextual Info: Preliminary CAT28LV256 Preliminary CAT28LV256 256K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: 250/300/350 ns ■ Automatic Page Write Operation: – 1 to 64 Bytes in 10ms – Page Load Timer ■ Low Power CMOS Dissipation:

BS62LV2003

Abstract: BS62LV2003SC BS62LV2003SI BS62LV2003STC BS62LV2003STI BS62LV2003TC BS62LV2003TI TSOP-32
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 256K X 8 bit BS62LV2003 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.4V ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 20mA Max. operating current I- grade : 25mA (Max.) operating current

BS62UV2001

Abstract: BS62UV2001SC BS62UV2001SI BS62UV2001STC BS62UV2001STI BS62UV2001TC BS62UV2001TI
Contextual Info: Preliminary Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit BSI BS62UV2001 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0V ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade : 15mA Max. operating current I- grade : 20mA (Max.) operating current

CAT28LV64

Abstract: 28LV64 28LV64-25
Contextual Info: Preliminary CAT28LV64 Preliminary CAT28LV64 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6 V Supply ■ Commercial and Industrial Temperature Ranges ■ Read Access Times: ■ CMOS and TTL Compatible I/O – 250/300/350ns ■ Automatic Page Write Operation:

1N914

Abstract: CAT28HT256
Contextual Info: CAT28HT256 Preliminary Preliminary CAT28HT256 Extended Temperature: 170˚C 2 256K-Bit CMOS E PROM FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: –1 to 64 Bytes in 10ms –Page Load Timer ■ Low Power CMOS Dissipation:

R1LP0108ESA-7SR

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher