8MMX14MM Search Results

AMIC A49LF040TL

Abstract: A49LF040TL A49LF004 A49LF040 lad1-24
Contextual Info: A49LF040 4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory Preliminary Document Title 4 Mbit CMOS 3.3 Volt-only Low Pin Count Flash Memory Revision History History Issue Date 0.0 Initial issue February 17, 2004 0.1 Add Pb-Free package type August 20, 2004

A49LF004

Abstract: A49LF040 A49LF040A A49LF040ATX-33F
Contextual Info: A49LF040A Preliminary 4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory Document Title 4 Mbit CMOS 3.3 Volt-only Low Pin Count Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue March 3, 2006 Preliminary 0.1 Correct the part number from A49LF040A to A49LF040AT on

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H64M4 – 16 MEG X 4 X 4 MT47H32M8 – 8 MEG X 8 X 4 MT47H16M16 – 4 MEG X 16 X 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/products/dram/ddr2sdram/ Features • •

CAT28LV256

Contextual Info: Preliminary CAT28LV256 Preliminary CAT28LV256 256K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: 250/300/350 ns ■ Automatic Page Write Operation: – 1 to 64 Bytes in 10ms – Page Load Timer ■ Low Power CMOS Dissipation:

CAT28LV64

Abstract: 28LV64 28LV64-25
Contextual Info: Preliminary CAT28LV64 Preliminary CAT28LV64 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6 V Supply ■ Commercial and Industrial Temperature Ranges ■ Read Access Times: ■ CMOS and TTL Compatible I/O – 250/300/350ns ■ Automatic Page Write Operation:

1N914

Abstract: CAT28HT256
Contextual Info: CAT28HT256 Preliminary Preliminary CAT28HT256 Extended Temperature: 170˚C 2 256K-Bit CMOS E PROM FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: –1 to 64 Bytes in 10ms –Page Load Timer ■ Low Power CMOS Dissipation:

EN29LV040A-70SCP

Abstract: EN29LV040A EN29LV040A-70 555H SST39VF020 SST39VF020-70-4C-WHE
Contextual Info: Eon Silicon Solution Inc. Application Note SST Flash SST39VF020 to Eon Flash EN29LV040A This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/06/26 2005 Eon Silicon Solution Inc. www.ession.com

MX29LV040C

Abstract: MX29LV040CT2I-70G MX29LV040CTC-70G MX29LV040CQI-70G MX29LV040CQC-55Q architecture in 4289 MX29LV040 MX29LV040CQI-55Q MX29LV040CTI-70G 555H
Contextual Info: MX29LV040C 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • • • • • • • • Extended single - supply voltage range 2.7V to 3.6V 524,288 x 8 only Single power supply operation - 3.0V only operation for read, erase and program operation

A49LF004

Contextual Info: A49LF004 4 Mbit CMOS 3.3Volt-only Firmware Hub Flash Memory Preliminary Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash Memory Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Initial issue November 21, 2003 November, 2003, Version 0.0

Contextual Info: A49LF004 4 Mbit CMOS 3.3Volt-only Firmware Hub Flash Memory Preliminary Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash Memory Revision History History Issue Date 0.0 Initial issue November 21, 2003 0.1 Add Pb-Free package type August 20, 2004

49FL004

Abstract: a2724 49fl
Contextual Info: A49FL004 4 Mbit CMOS 3.3Volt-only Firmware Hub/LPC Flash Memory Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub/LPC Flash Memory Revision History Rev. No. History Issue Date 0.0 Initial issue September 23, 2005 Preliminary 1.0 Final version release December 13, 2005

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V

CAT28LV65

Contextual Info: Preliminary CAT28LV65 Preliminary CAT28LV65 64K-Bit CMOS E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: ■ Automatic Page Write Operation: – 1 to 32 Bytes in 5ms – Page Load Timer – 250/300/350ns ■ Low Power CMOS Dissipation:

CAT28C65B

Abstract: 1N914 28C65B
Contextual Info: CAT28C65B CAT28C65B 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: ■ Commercial, Industrial and Automotive Tem- – 120/150/200ns perature Ranges ■ Low Power CMOS Dissipation: ■ Automatic Page Write Operation: – Active: 25 mA Max. – Standby: 100 µA Max.

EN39LV010

Abstract: EN29LV010 Sector 8mmx14mm
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV010 vs. EN39LV010 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2009/ 06/11

a2724

Abstract: 49fl004 A49FL004
Contextual Info: A49FL004 4 Mbit CMOS 3.3Volt-only Firmware Hub/LPC Flash Memory Preliminary Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub/LPC Flash Memory Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Initial issue September 23, 2005 September, 2005, Version 0.0

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V

SST39WF160x

Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Contextual Info: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb

A49LF004

Abstract: A49LF004TL-33F
Contextual Info: A49LF004 4 Mbit CMOS 3.3Volt-only Firmware Hub Flash Memory Document Title 4 Mbit CMOS 3.3 Volt-only Firmware Hub Flash Memory Revision History History Issue Date 0.0 Initial issue November 21, 2003 0.1 Add Pb-Free package type August 20, 2004 0.2 Change Ordering Information

AMIC A49LF040TL

Contextual Info: A49LF040 4 Mbit CMOS 3.3Volt-only Low Pin Count Flash Memory Document Title 4 Mbit CMOS 3.3 Volt-only Low Pin Count Flash Memory Revision History History Issue Date 0.0 Initial issue February 17, 2004 0.1 Add Pb-Free package type August 20, 2004 0.2 Change ordering information

PS29FS001

Abstract: SA10 SA11 y127
Contextual Info: PROGRAMMABLE SILICON SOLUTIONS 1 Mb 128K x 8 Ultra High-Speed Boot Sector Flash Memory PS29FS001 FEATURES PRODUCT DESCRIPTION • Ultra High-Performance FLASH Memory – 20, 25, 35 & 45 ns Read Access – Eliminates Need for Shadow-RAM The PS29FS001 is a very high-speed, page program,

84 FBGA outline

Abstract: DDR2 x32 5 pin cmos operational amplifier z X6 BP 109 transistor T6N 700 DDR2 SDRAM Meg x 4 x 9 banks 0-30v power DDR2 SDRAM sstl_18 84 FBGA ccd ck
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 MT47H32M8 – 8 Meg x 8 x 4 MT47H16M16 – 4 Meg x 16 x 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding -37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V

Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H64M4 – 16 MEG x 4 x 4 MT47H32M8 – 8 MEG x 8 x 4 MT47H16M16 – 4 MEG x 16 x 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V