8MX16 Search Results

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

Contextual Info: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

Contextual Info: 128MB 168PIN PC100 CL2 SDRAM DIMM With 8M X 16 3.3VOLT TS16MLS64V8C2 Dimensions Description The TS16MLS64V8C2 is a 16M bit x 64 Synchronous Side Millimeters Inches Dynamic RAM high-density for PC-100 CL2. The A 133.35±0.40 5.250±0.016 TS16MLS64V8C2 consists of 8pcs CMOS 8Mx16 bits

IS42VM81600E

Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

HYM71V8635ALT6-H

Abstract: HYM71V8635ALT6-K HYM71V8635AT6 HYM71V8635AT6-H HYM71V8635AT6-K
Contextual Info: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635AT6 Series DESCRIPTION The Hynix HYM71V8635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

K4S28163LD

Abstract: K4S28163
Contextual Info: Mobile SDRAM VDD 2.5V, VDDQ 1.8V & 2.5V K4S28163LD-RG(S) Preliminary CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 85°C Operation) Revision 0.6 October 2001 Rev. 0.6 Oct. 2001 Mobile SDRAM (VDD 2.5V, VDDQ 1.8V & 2.5V) K4S28163LD-RG(S) Preliminary

Contextual Info: M463L0914DT0 172pin DDR Micro SODIMM 64MB DDR SDRAM MODULE 8Mx64 based on 8Mx16 DDR SDRAM 172pin Micro DIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.0 Dec. 2001 M463L0914DT0 172pin DDR Micro SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release

da53

Abstract: DB26
Contextual Info: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any

Contextual Info: 16Mx72 bits PC100 SDRAM SO DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16M755HC L T6 Series DESCRIPTION The HYM71V16M755HC(L)T6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of ten 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

sdram cmos

Contextual Info: CMOS SDRAM K4S28163LD-RF/R 8Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S28163LD-RF/R CMOS SDRAM Revision History Revision 0.0 (December 8. 2000, Preliminary) • First generation of 128Mb Low Power SDRAM (V DD 2.5V, VDDQ 1.8V).

HY5DV281622DT-4

Contextual Info: HY5DV281622DT 128M 8Mx16 DDR SDRAM HY5DV281622DT This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.5 / Aug. 2003

Contextual Info: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635HCT6 Series DESCRIPTION The Hynix HYM71V8635HCT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

HY5DV

Contextual Info: HY5DV281622DTP 128M 8Mx16 DDR SDRAM HY5DV281622DTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES DESCRIPTION n n n n n n n The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119

Contextual Info: SM564083574NZ3R January 11, 2002 Orderable Part Numbers Module Part Number SM564083574NZ3R Description 8Mx64 64MB , SDRAM, 144-pin SODIMM Unbuffered, 8Mx16 Based, CL3, PC133 Revision History • January 11, 2001 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

100MHZ

Abstract: 133MHZ 8MX32 WED3DL328V
Contextual Info: WED3DL328V White Electronic Designs 8Mx32 SDRAM FEATURES             DESCRIPTION The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer

Contextual Info: K4S28163LD-R B F/R CMOS SDRAM 8Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.3 December 2002 Rev. 1.3 Dec. 2002 K4S28163LD-R(B)F/R CMOS SDRAM 2M x 16Bit x 4 Banks Mobile sDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

HYM71V16M655BT6-P

Abstract: HYM71V16M655BT6-S HYM71V16655BT6 HYM71V16M655BLT6-8 HYM71V16M655BLT6-P HYM71V16M655BLT6-S
Contextual Info: 16Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16655BT6 Series Preliminary DESCRIPTION The Hynix HYM71V16655BT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx16bits

VDAAA2404

Contextual Info: V-Data VDAAA2404 PC-100/CL2 SDRAM Unbuffered DIMM 8Mx64bits SDRAM DIMM based on 8Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDAAA2404 is 8Mx64 bits Synchronous DRAM Modules, The modules are composed of four 8Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil

B6666RB

Abstract: VDABA2404
Contextual Info: V-Data VDABA2404 PC-133/CL2 SDRAM Unbuffered DIMM 8Mx64bits SDRAM DIMM based on 8Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDABA2404 is 8Mx64 bits Synchronous DRAM Modules, The modules are composed of four 8Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil

K1B2816

Contextual Info: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length

Contextual Info: KMM366S924TS PC100 Unbuffered DIMM Revision History Revision 0.1 Jun. 14, 1999 - Changed "Detail C" in PCB Dimension and eliminated misprinted heat sink. Rev. 0.1 Jun. 1999 PC100 Unbuffered DIMM KMM366S924TS KMM366S924TS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Contextual Info: M368L0914BT1 184pin Unbuffered DDR SDRAM MODULE 64MB DDR SDRAM MODULE 8Mx64 based on 8Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.6 June. 2000 - -1 - Rev. 0.6 June. 2000 M368L0914BT1 184pin Unbuffered DDR SDRAM MODULE Revision History

Contextual Info: K1S28161CM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter