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    SOCKET SCREWS M5-0.8X10MMSETCP ST ZC

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    Bisco Industries M5-0.8X10MMSETCP ST ZC 21,593
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    SOCKET SCREWS M5X0.8X10MMSETCP ST BO

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    Bisco Industries M5X0.8X10MMSETCP ST BO 9,513
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    HEX HEAD CAP SCREWS M5-0.8X10MM 8.8 ZC

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    Bisco Industries M5-0.8X10MM 8.8 ZC 1,620
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    MACHINE SCREWS M5-0.8X10MMPAN PH SS PS

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    Bisco Industries M5-0.8X10MMPAN PH SS PS 500
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    MACHINE SCREWS M5X.8X10MM FT9 PH ST ZC

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    Bisco Industries M5X.8X10MM FT9 PH ST ZC 102
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    8X10MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A420

    Abstract: A440 A441 A442 SL1024A 15KA
    Text: GAS DISCHARGE TUBE 8x10mm No. A440/A441/A442 3-electrode 10kA/10A Standard Series Features This product is not recommended for new designs. Please refer to Littelfuse series SL1024A. Non-radioactive Lead Free Failsafe Option Applications Telecommunication


    Original     		PDF 8x10mm A440/A441/A442 10kA/10A) SL1024A. A440/F A442/F: UL-497B 57845/VDE A420 A440 A441 A442 SL1024A 15KA

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K


    Original     		PDF CS16LV81923 48CSP-6x8mm 48CSP-8x10mm 48BGA CS16LV81923low

    A450

    Abstract: A451 A452 SL1021A
    Text: GAS DISCHARGE TUBE 8x10mm 451 /A 452 No. A4 A455 0/A 0/A451 451/A /A452 3-electrode 20kA/10A Enhanced Discharge Series This product is not recommended Features for new designs. Please refer to Non-radioactive Lead Free Failsafe Option Littelfuse series SL1021A.


    Original     		PDF 8x10mm 0/A451/A452 A450/A451/A452 451/A 20kA/10A) SL1021A. A450/F: A452/F: A450 A451 A452 SL1021A

    CS16LV81923

    Abstract: 850C SRAM 512K
    Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K


    Original     		PDF CS16LV81923 48CSP-6x8mm 48CSP-8x10mm 48BGA CS16LV8192 CS16LV81923 850C SRAM 512K

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K


    Original     		PDF CS16LV81923 48CSP-6x8mm 48CSP-8x10mm CS16LV81923

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K


    Original     		PDF CS16LV81923 48CSP-6x8mm 48CSP-8x10mm CS16LV81923

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Revision 1.2 (16 Jan. 2008) - Add 8x10mm BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008


    Original     		PDF 8x10mm M53D128168A M53D128168A

    a440 ceramic

    Abstract: A441 A420 A440 A442
    Text: GAS DISCHARGE TUBE 8x10mm No. A440/A441/A442 3-electrode 10kA/10A Standard Series Features Non-radioactive Lead Free Failsafe Option Applications Telecommunication Data Transmission Subscriber protection Underground cables Specifications Packaging A440:


    Original     		PDF 8x10mm A440/A441/A442 10kA/10A) A440/F A442/F: UL-497B 57845/VDE a440 ceramic A441 A420 A440 A442

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K


    Original     		PDF CS16LV81923 48CSP-6x8mm 48CSP-8x10mm 48BGA CS16Llow

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K


    Original     		PDF CS16LV81923 48CSP-6x8mm 48CSP-8x10mm CS16LV81923

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. 2.0 2.1 2.2 History Initial issue with new naming rule Add 48CSP-6x8mm package outline Revise 48CSP-8x10mm pkg code from W to K Issue Date Feb.15, 2005 Mar. 08, 2005


    Original     		PDF CS16LV81923 48CSP-6x8mm 48CSP-8x10mm CS16LV81923

    Untitled

    Abstract: No abstract text available
    Text: High Speed Super Low Power SRAM CS16LV16163K 1M Word x 16 Bit PACKAGE DIMENSIONS: 48 ball Mini_BGA-8x10mm 14 Rev. 1.0 Chiplus reserves the right to change product or specification without notice.


    Original     		PDF CS16LV16163K BGA-8x10mm

    A450

    Abstract: A451 A452
    Text: GAS DISCHARGE TUBE 8x10mm 451 /A 452 No. A4 A4550/A 0/A451 451/A /A452 Specifications 3-electrode 20kA/10A Enhanced Discharge Series Packaging A450: 00=Bulk (2.000 pcs.) A450/F: 00_Bulk (500 pcs.) Features A451: 04=Tray (250 pcs.) A452/F: 04=Tray (500 pcs.)


    Original     		PDF 8x10mm A450/A451/A452 451/A 20kA/10A) A450/F: A452/F: A450 A451 A452

    T14L1024N

    Abstract: T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W
    Text: tm TE CH T14L1024N SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION • Fast Address Access Times : 10/12/15ns The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for


    Original     		PDF T14L1024N 10/12/15ns T14L1024N 110/105/100mA 32thout 36-Ball 8x10mm) T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W

    M36L0T7050T2

    Abstract: M58LT128HB M58LT128HT M36L0t7050
    Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM


    Original     		PDF M36L0T7050T2 M36L0T7050B2 M36L0T7050T2: 88C4h M36L0T7050B2: 88C5h M36L0T7050T2 M58LT128HB M58LT128HT M36L0t7050

    a6583

    Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
    Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R8000T0 M30L0R8000B0 54MHz a6583 CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0

    100PF

    Abstract: BS616UV8010 BS616UV8010BC BS616UV8010BI
    Text: Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI „ FEATURES BS616UV8010 „ DESCRIPTION • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current


    Original     		PDF BS616UV8010 100ns R0201-BS616UV8010 100PF BS616UV8010 BS616UV8010BC BS616UV8010BI

    BS616LV8013

    Abstract: BS616LV8013BC BS616LV8013BI
    Text: BSI Very Low Power/Voltage CMOS SRAM 512K X 16 bit „ FEATURES BS616LV8013 „ DESCRIPTION • Very low operation voltage : 2.4~3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current


    Original     		PDF BS616LV8013 100ns x8/x16 BS616LV8013 -40oC 8x10mm) R0201-BS616LV8013 BS616LV8013BC BS616LV8013BI

    M68AR512DL

    Abstract: TFBGA48
    Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V


    Original     		PDF M68AR512DL TFBGA48 M68AR512DL TFBGA48

    100PF

    Abstract: BS616UV1610 BS616UV1610BC BS616UV1610BI BS616UV1610FC BS616UV1610FI
    Text: BSI Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 „ FEATURES „ DESCRIPTION • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 25mA Max. operating current I-grade : 30mA (Max.) operating current


    Original     		PDF BS616UV1610 100ns x8/x16 BS616UV1610 R0201-BS616UV1610 100PF BS616UV1610BC BS616UV1610BI BS616UV1610FC BS616UV1610FI

    PSRAM

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
    Text: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		PDF M36L0R8060T1 M36L0R8060B1 M36L0R8060T1: 880Dh M36L0R8060B1: 880Eh 54MHz PSRAM RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA

    510T

    Abstract: BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4023 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current


    Original     		PDF BS616LV4023 100ns x8/x16 BS616LV4023 -40oC 8x10mm) R0201-BS616LV4023 510T BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI

    a10 bga-9

    Abstract: transistors equivalent 0912 BS616UV1620 BS616UV1620BC BS616UV1620BI BS616UV1620FC BS616UV1620FI
    Text: Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BSI BS616UV1620 „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 1.8V C-grade : 25mA Max. operating current I- grade : 30mA (Max.) operating current


    Original     		PDF BS616UV1620 100ns x8/x16 BS616UV1620 R0201-BS616UV1620 a10 bga-9 transistors equivalent 0912 BS616UV1620BC BS616UV1620BI BS616UV1620FC BS616UV1620FI

    Untitled

    Abstract: No abstract text available
    Text: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V


    Original     		PDF M68AR024D TFBGA48