9 GHZ TRANSISTOR Search Results

9 GHZ TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

9 GHZ TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NDA-310-D Abstract: 84-1LMI Ablebond 190 Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-310-D DC-15 GHz 6000048 Rev. A 1 Features Applications • • • • • • • Reliable low-cost HBT-based design 9 dB Gain, +14.8 dBm P1dB @ 2 GHz High P1dB of +15.0 dBm at 6.0 GHz and +9.4 dBm at 14.0 GHz	Original	NDA-310-D DC-15 84-1LMI 10420-F NDA-310-D Ablebond 190	PDF
SD1898 Contextual Info: SD1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . 1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS C OPERATION COMMON BASE POUT = 32 W MIN. WITH 9 dB GAIN .400 SQ. 2LFL M186 epoxy sealed ORDER CODE SD1898 BRANDING 1898 PIN CONNECTION DESCRIPTION	Original	SD1898 SD1898	PDF
SD1898 Contextual Info: SD1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . 1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS C OPERATION COMMON BASE P OUT = 32 W MIN. WITH 9 dB GAIN .400 SQ. 2LFL M186 epoxy sealed ORDER CODE SD1898 BRANDING 1898 PIN CONNECTION DESCRIPTION	Original	SD1898 SD1898 25wise	PDF
transistor j50 Abstract: c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 NE686 S21E Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz	Original	UPA807T NE686 UPA807T low12 24-Hour transistor j50 c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 S21E	PDF
RCC1010 Abstract: 84-1LMI NDA-312 RF Nitro Communications Ablebond 190 Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-312 DC-15 GHz 6000049 Rev. 1 Features • • • 1 • • • Reliable low-cost HBT-based design 9 dB Gain, +14.8 dBm P1dB @ 2 GHz High P1dB of +15.0 dBm at 6.0 GHz and +9.4 dBm at 14.0 GHz Distributed amplifier with fixed gain or Adjustable	Original	NDA-312 DC-15 NDA-312 50-Ohm 84-1LMI 10420-F RCC1010 RF Nitro Communications Ablebond 190	PDF
MRAL1720-9 Abstract: "RF Power Transistor" 2L TRANSISTOR NPN rf transistor Contextual Info: MRAL1720-9 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 250 2L FLG The ASI MRAL1720-9 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz. C FEATURES: • Diffused Ballast Resistors. • Internal Matching Network	Original	MRAL1720-9 MRAL1720-9 "RF Power Transistor" 2L TRANSISTOR NPN rf transistor	PDF
S21E Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350 Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	UPA809T NE688 UPA809T 24-Hour S21E UPA809T-T1 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350	PDF
NE688 Abstract: S21E UPA814T UPA814T-T1 Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1	PDF
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour	PDF
SIEMENS bga Abstract: mje 346 siemens transistor Contextual Info: SIEMENS BGA 420 Si-MMIC-Amplifier in SIEGET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 13 dB at 1.8 GHz /P3out = +9 dBm at 1.8 GHz VD = 3 V, /D = typ. 6.4 mA • Noise figure NF= 2.2 dB at 1.8 GHz	OCR Scan	25-Technologie Q62702-G0057 OT-343 de/Semiconductor/products/35/35 SIEMENS bga mje 346 siemens transistor	PDF
A03 transistor Abstract: 3V02 88-FF Contextual Info: S IE M E N S BGA420 Si-MMIC-Amplifier in SIEGET 25-Technoiogy Preliminary Data # • • • # # Cascadable 50 Q-Gain Block Unconditionally stable Gain \|s21f= 1 3 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz	OCR Scan	BGA420 25-Technoiogy OT343 Q62702-G0057 A03 transistor 3V02 88-FF	PDF
hfe 4538 Abstract: IC 7448 IC 7432 pin configuration ic 7448 UPA827TF ic LC 7815 pin configuration of ic 7448 pin configuration NPN transistor 9013 npn pin configuration of 7496 IC C 4804 transistor Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: \|S21E\|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 \|S21E\|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA	Original	UPA827TF NE686 UPA827TF UPA827TF-T1 24-Hour hfe 4538 IC 7448 IC 7432 pin configuration ic 7448 ic LC 7815 pin configuration of ic 7448 pin configuration NPN transistor 9013 npn pin configuration of 7496 IC C 4804 transistor	PDF
FP100 Abstract: MIL-HDBK-263 Contextual Info: FP100 PRELIMINARY DATA SHEET HIGH PERFORMANCE PHEMT • FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz • DIE SIZE: 16.5 x 16.5 mils 420 x 420 µm DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.)	Original	FP100 FP100 MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263	PDF
A114 Abstract: A115 FPD4000V JESD22 Contextual Info: PRELIMINARY • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Linear Output Power ♦ 11 dB Power Gain ♦ Useable Gain to 9 GHz ♦ 47 dBm Output IP3 ♦ 19 dB Maximum Stable Gain ♦ 45% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias FPD4000V	Original	FPD4000V FPD4000V A114 A115 JESD22	PDF

SOT173 Abstract: BFG505 BFP505 BFR505 X3A-BFR505 crystal PHILIPS Contextual Info: P h ilip s S em icon du ctors P rodu ct specification 1^3 1 - 9 0 NPN 9 GHz wideband transistor crystal PHILIPS SbE INTERNATIONAL » D ESCRIPTION X3A-BFR505 711002b I 0D4bl05 32^ • P H I N M E C H A N IC A L DATA NPN crystal used in BFR505 SOT23 , BFG505	OCR Scan	BFR505 BFG505 OT143) BFP505 OT173) X3A-BFR505 X3A-BFR505 RV-3-5-52/733 SOT173 BFG505 BFP505 BFR505 crystal PHILIPS	PDF
MP4T645 Abstract: Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E Contextual Info: Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Case Styles Features •fT to 9 GHz •Low Noise Figure •High Associated Gain •Hermetic and Surface Mount Packages Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els •Industry Standard	Original	MP4T645 MP4T645 MP4T64535) MP4T64539 OT-143 Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E	PDF
4 npn transistor ic 14pin Abstract: C10535E PA103 lowest noise audio NPN transistor Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:	Original	PA103 PA103B: PA103G: 14-pin PA103 4 npn transistor ic 14pin C10535E lowest noise audio NPN transistor	PDF
LP1500 Abstract: MIL-HDBK-263 Filtronic LP1500P100 pHEMT transistor Contextual Info: LP1500P100 PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide	Original	LP1500P100 15GHz LP1500P100 LP1500 MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 Filtronic pHEMT transistor	PDF
BFR520 Abstract: 900MHZ Contextual Info: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.	Original	BFR520 OT-23 BFR520 06-Feb-07 OT-23 900MHZ	PDF
BFG520W Abstract: SOT343N DIN45004B Contextual Info: BFG520W; BFG520W/X NPN 9 GHz wideband transistors Rev. 04 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	BFG520W; BFG520W/X BFG520W SOT343N DIN45004B	PDF
ac 51 0865 75 849 Abstract: 7082 B amplifier 7082 B ic audio amplifier Contextual Info: DATA SHEET SILICON TRANSISTOR juPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS FEATURES • (Unit: mm) Low Current, High Gain \|Szie\|2 = 9 dB T Y P . @ Vce = 2 V, le = 7 mA, f = 2 GHz	OCR Scan	uPA807T 2SC5179) PA807T uPA807T-T1 ac 51 0865 75 849 7082 B amplifier 7082 B ic audio amplifier	PDF
Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)	OCR Scan	uPA102 PA102B: PA102G: 14-pin PA102	PDF
transistor NEC D 882 p Abstract: 33 nec 125 t2 transistor NEC D 587 nec d 882 p transistor transistor Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS Units: mm Low current consum ption and high gain \|Szie\|2 = 9 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz	OCR Scan	2SC5179 SC-70 2SC5179-T1 2SC5179-T2 transistor NEC D 882 p 33 nec 125 t2 transistor NEC D 587 nec d 882 p transistor transistor	PDF
BFG540 Abstract: BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760 Contextual Info: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact	Original	BFG540; BFG540/X; BFG540/XR BFG540 BFG540XR BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760	PDF

9 GHZ TRANSISTOR Search Results

9 GHZ TRANSISTOR Result Highlights (5)

9 GHZ TRANSISTOR Datasheets Context Search

NDA-310-D

SD1898

SD1898

transistor j50

RCC1010

MRAL1720-9

S21E

NE688

SIEMENS bga

A03 transistor

hfe 4538

FP100

A114

SOT173

MP4T645

4 npn transistor ic 14pin

LP1500

BFR520

BFG520W

ac 51 0865 75 849

transistor NEC D 882 p

BFG540