SOT173 RF transistor
Abstract: No abstract text available
Text: Philips Semiconductors btiSB'lBl 0 0 31 4 ^ 3 S S I M A P X Preliminary specification NPN 9 GHz wideband transistor BFP505 N AMER P H ILIP S /D IS C R E TE FEATURES b'lE D PINNING • High power gain PIN • Low noise figure 1 collector • High transition frequency
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BFP505
OT173X)
BFP505
OT173
SOT173 RF transistor
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Untitled
Abstract: No abstract text available
Text: bb-53^31 DD3EE15 T^7 Hi APX Philips Sem iconductors Product specification NPN 9 GHz wideband transistor X3A-BFR505 crystal N A PIER PHILIPS/DISCRETE b^E » DESCRIPTION MECHANICAL DATA NPN crystal used in BFR505 SOT23 , BFG505 (SOT143) and BFP505 (SOT173). Crystals are supplied
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bb-53
DD3EE15
X3A-BFR505
BFR505
BFG505
OT143)
BFP505
OT173)
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sot173x
Abstract: BFP505
Text: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES ¡"^7 ”^“ 3 SbE D • BFP505 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain • Low noise figure DESCRIPTION PIN • High transition frequency
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OT173X)
BFP505
711DflSb
BFP505
OT173
OT173X
MBC360
sot173x
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SOT173
Abstract: SOT-173 wideband transistor sot173 BFP505 NPN planar RF transistor 5 GHZ TRANSISTOR
Text: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFP505 SbE D • 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain PIN • Low noise figure 1 DESCRIPTION O’ collector • High transition frequency
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BFP505
OT173X)
BFP505
OT173
OT173X
004S3Ã
OT173.
OT173X.
SOT173
SOT-173
wideband transistor sot173
NPN planar RF transistor
5 GHZ TRANSISTOR
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SOT-173
Abstract: sot173 BFP96 BFQ32C
Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A
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BFG198
BFG505
BFG505/X
BFG505/XR
BFG520
BFG520/X
BFG520/XR
BFG540
BFG540/X
BFG540/XR
SOT-173
sot173
BFP96
BFQ32C
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SOT173
Abstract: BFP505 SOT-173
Text: Philips Semiconductors bbSB^Bl 00314*13 ^BAPX SSI Preliminary specification NPN 9 GHz wideband transistor BFP505 N AUER PHILIPS/DISCRETE FEATURES • • bTE D PINNING High power gain Low noise figure PIN 1 • • High transition frequency Gold metallization ensures
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BFP505
OT173X)
BFP505
OT173
OT173X
OT173ctor-base
SOT173
SOT-173
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SOT173
Abstract: BFG505 BFP505 BFR505 X3A-BFR505 crystal PHILIPS
Text: P h ilip s S em icon du ctors P rodu ct specification 1^3 1 - 9 0 NPN 9 GHz wideband transistor crystal PHILIPS SbE INTERNATIONAL » D ESCRIPTION X3A-BFR505 711002b I 0D4bl05 32^ • P H I N M E C H A N IC A L DATA NPN crystal used in BFR505 SOT23 , BFG505
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BFR505
BFG505
OT143)
BFP505
OT173)
X3A-BFR505
X3A-BFR505
RV-3-5-52/733
SOT173
BFG505
BFP505
BFR505
crystal PHILIPS
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fr91a
Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Text: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72
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BFG96
BFP96
BFP505
BFP520
BFP540
BFQ33C
BFQ63
BFQ65
BFQ66
BFQ161
fr91a
philips bfq
FQ235a
t122 25 3
FQ262a
fr90a
122e
BFR134
t122 25 10
t122 25 72
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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LCD01
BF547A
transistor bf 175
BFG65 equivalent
BF547B
BFG25AXD
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BFT92A
Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E
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BFY90
TQ-92
BF689K
BF763
SOt-37
BFT24
BFW92
BFW93
OT-122E
OT-23
BFT92A
BFT93A
BFG134
bf689
sot37
sot173
BFG34
BFQ52
bfg65 sot143
philips bfw92
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BFG591 amplifier
Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors
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OT122
OT143
OT223
OT323
BFS17W
BFG17A
BFG16A
BF547W
BF747W
BFT25
BFG591 amplifier
SC08a
bfr591
sot173x
BB544
sot122
sot172
bfg65 sot143
SIEMENS BFP520
macro-X ceramic
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SOT173
Abstract: BFG505 BFP505 BFR505 X3A-BFR505
Text: IAPX bb53T31 DD3SS1S W P h ilip s S e m icon d u ctors P ro d u ct sp ecificatio n NPN 9 GHz wideband transistor X3A-BFR505 crystal — -^ 1^— N A M ER P H I L I P S / D I S C R E T E hlE ]> D ESCRIPTIO N M E C H A N IC A L DATA N PN crystal used in BFR505 SOT23 , BFG505
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bb53T31
X3A-BFR505
BFR505
BFG505
OT143)
BFP505
OT173)
X3A-BFR505
URV-3-5-52/733
SOT173
BFG505
BFP505
BFR505
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