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    90 P 6 PIN MOSFET Search Results

    90 P 6 PIN MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    90 P 6 PIN MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSM600P03CS 30V P-Channel Power MOSFET SOP-8 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS -30 V RDS on (max) VGS = -10V 60 VGS = -4.5V 90 Qg Ordering Information


    Original     		PDF TSM600P03CS TSM600P03CS 900ppm 1500ppm 1000ppm

    Untitled

    Abstract: No abstract text available
    Text: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM9435 TSM9435CS

    pF3900

    Abstract: No abstract text available
    Text: IXDN402 / IXDI402 / IXDF402 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 2A Peak


    Original     		PDF IXDN402 IXDI402 IXDF402 1000pF IXDN402/IXDI402/IXDF402 Edisonstrasse15 D-68623; pF3900

    RA60H1317M1A

    Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to


    Original     		PDF RA60H1317M1A 136-174MHz RA60H1317M1A 60-watt 174-MHz RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor

    LT 7210

    Abstract: lt 7210 datasheet 440M 470M RA60H4452M1 RA60H4452M1-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA60H4452M1 440-520MHz RA60H4452M1 60-watt 520-MHz LT 7210 lt 7210 datasheet 440M 470M RA60H4452M1-101

    RA55H4452M

    Abstract: No abstract text available
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz

    lt 7210

    Abstract: 400M 430M 470M RA60H4047M1 RA60H4047M1-101 RA60H4047M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA60H4047M1 400-470MHz RA60H4047M1 60-watt 470-MHz lt 7210 400M 430M 470M RA60H4047M1-101 RA60H4047M

    RA60H4047M1-101

    Abstract: RA60H4047M1 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4047M1 RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA60H4047M1 400-470MHz RA60H4047M1 60-watt 470-MHz Mar2008 RA60H4047M1-101 lt 7245 lt 7210 400M 430M 470M amplifier 60watt module

    RA55H3847M

    Abstract: No abstract text available
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3847M RoHS COMPLIANCE , 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3847M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 380- to


    Original     		PDF RA55H3847M 380-470MHz RA55H3847M 55-watt 470-MHz

    IXDF404

    Abstract: IXDI404PI IXDD404PI IXDN404 IXDI404 IXDN404PI IXDN404SI IXDN404SIA SOIC-16
    Text: IXDN404 / IXDI404 / IXDF404 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected Over Entire Operating Range • High Peak Output Current: 4A Peak


    Original     		PDF IXDN404 IXDI404 IXDF404 1800pF IXDN404/IXDI404/IXDF404 IXDN404 IXDD404PI IXDF404 IXDI404PI IXDD404PI IXDN404PI IXDN404SI IXDN404SIA SOIC-16

    RA55H4452M

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz

    RA55H4047M

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4047M RoHS COMPLIANCE , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4047M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA55H4047M 400-470MHz RA55H4047M 55-watt 470-MHz

    LTC3780

    Abstract: LTC4446 LTC4444-5 LTC4444E-5 LTC4444I-5 LTC4444MP-5 LTC4444MPMS8E-5 LTC3780EG 4.5V to 100V input regulator LTC4440-5
    Text: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver Features n n n n n n n n n n n n n n Description Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current 1.75A Peak Bottom Gate Pull-Up Current


    Original     		PDF LTC4444-5 LTC4444-5 LTC4449 LTC4441/LTC4441-1 LTC1154 44445fb LTC3780 LTC4446 LTC4444E-5 LTC4444I-5 LTC4444MP-5 LTC4444MPMS8E-5 LTC3780EG 4.5V to 100V input regulator LTC4440-5

    50ND2

    Abstract: RA45H4047M RA45H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4047M RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4047M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA45H4047M 400-470MHz RA45H4047M 45-watt 470-MHz 50ND2 RA45H4047M-101

    low side gate driver

    Abstract: IXDF504D1
    Text: IXDF504/ IXDI504 / IXDN504 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected up to 4 Amps • High Peak Output Current: 4A Peak


    Original     		PDF IXDF504/ IXDI504 IXDN504 1800pF IXDF504, IXDN504 IXDF504 low side gate driver IXDF504D1

    d408

    Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to


    Original     		PDF RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz d408 DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1-101 DD 128 transistor

    RA30H3340M

    Abstract: RA30H3340M-01 RA30H3340M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M 330-400MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


    Original     		PDF RA30H3340M 330-400MHz RA30H3340M 30-watt 400-MHz RA30H3340M-01 RA30H3340M-E01

    Untitled

    Abstract: No abstract text available
    Text: 19-1381; Rev 0; 7/98 KIT ATION EVALU E L B AVAILA 1 -Ce ll t o 2 -Ce ll, Low -N oise , H igh-Effic ie nc y, St e p-U p DC-DC Conve rt e r Fe a t ure s ♦ 0.87V Guaranteed Start-Up The device includes a 1Ω, N-channel MOSFET power switch, a synchronous rectifier that acts as the catch


    Original     		PDF

    RA45H8994M1

    Abstract: RA45H8994M1-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to


    Original     		PDF RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz RA45H8994M1-101

    mosfet marking 12W

    Abstract: RA07H0608M RA07H0608M-101 transistor marking code 12W 30mW transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H0608M RoHS Compliance ,68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 68- to 88-MHz


    Original     		PDF RA07H0608M 68-88MHz RA07H0608M 88-MHz mosfet marking 12W RA07H0608M-101 transistor marking code 12W 30mW transistor

    RA07M0608M-101

    Abstract: RA07M0608M Pin-30mW RA07M0608
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M0608M RoHS Compliance ,66-88MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M0608M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 66- to


    Original     		PDF RA07M0608M 66-88MHz RA07M0608M 88-MHz RA07M0608M-101 Pin-30mW RA07M0608

    RA45H7687M1

    Abstract: RA45H7687M1-101 45WATT DD 128 D transistor
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to


    Original     		PDF RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101 45WATT DD 128 D transistor

    Untitled

    Abstract: No abstract text available
    Text: HV3 50 23 HARRIS PRELIMINARY Half Bridge N-Channel MOSFET Driver M a y 1991 Features D escription • U nip olar S u p p ly O peratio n The H V 3 5 0 is a m onolithic dielectrically isolated high volt­ age integrated circuit. The circu it provides an interface from


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HV250 2 HARRIS PRELIMINARY Half Bridge Com plem entary MOSFET Driver M ay 1991 Features D escription • Bipolar or Unipolar Supply Operation The HV250 is a monolithic dielectrically isolated high volt­ age integrated circuit. The circuit provides an interface from


    OCR Scan     		PDF HV250 HV250 80VDC 450VDC 40VDC -100VDC.