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    TSM3441CX6 Search Results

    TSM3441CX6 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSM3441CX6 Taiwan Semiconductor 20V P-Channel Enhancement-Mode MOSFET Original PDF
    TSM3441CX6 Taiwan Semiconductor 20V P-Channel MOSFET Original PDF

    TSM3441CX6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSM3441

    Abstract: TSM3441CX6
    Text: TSM3441 -20V P-Channel Enhancement-Mode MOSFET SOT-26 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = -20V RDS on , Vgs @ -4.5V, Ids @ -3A =100mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =150mΩ Block Diagram Features P-Channel MOSFET


    Original     		PDF TSM3441 OT-26 TSM3441CX6 000/per 300uS, OT-26 TSM3441 TSM3441CX6

    TSM3441

    Abstract: TSM3441CX6
    Text: TSM3441 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 90 @ VGS = -4.5V -3.3 110 @ VGS = -2.5V -2.9 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3441 OT-26 TSM3441CX6 TSM3441

    SOT-26 ci

    Abstract: TSM3441CX6 607ts
    Text: E TAIWAN TSM3441 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY P in D e f in it io n : V os (V ) 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source •20 1 23 Features R Ds(on)(mQ) b (A ) 90 @ Vos = -4.5V -3.3 110@ Vgs = -2.5V


    OCR Scan     		PDF M3441 OT-26 TSM3441CX6 OT-26 SOT-26 ci 607ts