900MM2 Search Results

MCH3383

Contextual Info: MCH3383 Ordering number : EN9000A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3383 Low Voltage Drive Switching Device Applications Features • • • • ON-resistance RDS on 1=57mΩ (typ.) 0.9V drive Halogen free compliance Protection diode in

ech8 pattern

Abstract: ECH8651R ECH8651R-TL-H ECH8651 A10105
Contextual Info: ECH8651R Ordering number : ENA1010A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8651R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

bb11175

Abstract: BB11172 BB11174 BB1117F4 REG1117 REG1117-2 REG1117-3 REG1117-5 REG1117A
Contextual Info: REG1117 REG1117A SBVS001D − OCTOBER 1992 − REVISED JULY 2004 800mA and 1A Low Dropout Positive Regulator 1.8V, 2.5V, 2.85, 3.3V, 5V, and Adjustable FEATURES D FIXED AND ADJUSTABLE VERSIONS D 2.85V MODEL FOR SCSI-2 ACTIVE D D D D D D TERMINATION OUTPUT CURRENT:

Contextual Info: ECH8310 Ordering number : ENA1430 SANYO Semiconductors DATA SHEET ECH8310 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: SCH1435 Ordering number : ENA1637 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH1435 General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: SCH1331 Ordering number : ENA1530 SANYO Semiconductors DATA SHEET SCH1331 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance. Specifications

Contextual Info: CPH6444 Ordering number : ENA1243A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6444 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: ECH8315 Ordering number : ENA1387 SANYO Semiconductors DATA SHEET ECH8315 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

Contextual Info: CPH6350 Ordering number : ENA1529 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6350 General-Purpose Switching Device Applications Features • • 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

Contextual Info: Ordering number : EN8758B MCH6663 Power MOSFET http://onsemi.com 30V, 1.8A, 188mΩ, –30V, –1.5A, 325mΩ, Complementary Dual MCPH6 Features • • • • ON-resistance Nch : RDS on 1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance

Contextual Info: Ordering number : ENA1353B MCH3478 N-Channel Power MOSFET http://onsemi.com 30V, 2A, 165mΩ, Single MCPH3 Features • • • Low ON-resistance 1.8V drive Protection diode in • • Ultrahigh speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA1531A SCH1333 P-Channel Power MOSFET http://onsemi.com –20V, –2A, 130mΩ, Single SCH6 Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

BB11174

Abstract: BB11175 BB1117 BB11172 REG1117 bb11173 5wk9 REG1117-2 REG1117-3 REG1117-5
Contextual Info: REG1117 800mA Low Dropout Positive Regulator 2.85V, 3V, 3.3V, 5V, and Adjustable FEATURES APPLICATIONS ● 2.85V, 3V, 3.3V, 5V, and ADJUSTABLE VERSIONS ● SCSI-2 ACTIVE TERMINATION ● HAND-HELD DATA COLLECTION DEVICES ● 2.85V MODEL FOR SCSI-2 ACTIVE

82306

Abstract: marking WZ 3HP04MH A0445
Contextual Info: 3HP04MH Ordering number : ENA0445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04MH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

3LP04MH

Contextual Info: 3LP04MH Ordering number : ENA0551 P-Channel Silicon MOSFET 3LP04MH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

82306

Abstract: ECH8621R
Contextual Info: ECH8621R Ordering number : EN8718 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8621R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.

PQ018EH01ZPH

Abstract: 015E PQ015EH01ZPH PQ015EH01ZZH PQ018EH01ZZH PQ025EH01ZPH PQ025EH01ZZH O10F PQXXXEH01ZXH
Contextual Info: PQxxxEH01ZxH Series PQxxxEH01ZxH Series Features Low Voltage Operation Low Power-Loss Voltage Regulators • Outline Dimensions Unit : mm 10.6MAX. (0.55) 3.5±0.5 3.28±0.5 (0.6) 6 ø2 015E H01 8.4±0.5 13.7MAX. Lead finish identification mark H (2.4) 1.Low voltage operation

CPH6621

Contextual Info: CPH6621 Ordering number : ENA0847 SANYO Semiconductors DATA SHEET CPH6621 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

MCH3314

Abstract: MCH5805 SB01-05
Contextual Info: Ordering number : ENN7125 MCH5805 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5805 DC / DC Converter Applications Package Dimensions unit : mm 2195 0.25 [MCH5805] 0.15 0.3 5 3 2 0.65 1 0.07 1.6 4 0.25 Composite type with a P-channel sillicon MOSFET

CPH6603

Contextual Info: Ordering number : ENN7146 CPH6603 P-Channel Silicon MOSFET CPH6603 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2202 [CPH6603] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6

CPH6601

Abstract: ENN7155 TA-3620
Contextual Info: Ordering number : ENN7155 CPH6601 P-Channel Silicon MOSFET CPH6601 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2202 [CPH6601] 0.15 2.9 5 4 0.6 6

5wk9

Abstract: bb11182 1352B Burr Brown part marking "SCSI Terminators" Burr-Brown IC data book appendix c 1N5817 6730S REG1118 B91007604
Contextual Info: REG1118 REG 1118 800mA Low Dropout Positive Regulator with Current Source and Sink Capability FEATURES DESCRIPTION ● SOURCES 800mA, SINKS 400mA ● 2.85V OUTPUT FOR SCSI ACTIVE NEGATION TERMINATION ● 1.3V max DROPOUT VOLTAGE AT IO = 800mA ● INTERNAL CURRENT LIMIT

ENA0302

Abstract: ECH8306
Contextual Info: ECH8306 Ordering number : ENA0302 P-Channel Silicon MOSFET ECH8306 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage